VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • AEC-Q101 qualified 2 Common cathode 1 3 Anode Anode D-PAK (TO-252AA) • Meets JESD 201 class 1A whisker test • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION/APPLICATIONS PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x3A VR 200 V VF at IF 1.0 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode Vishay Semiconductors’ 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current per device IF(AV) Non-repetitive peak surge current IFSM Peak repetitive forward current per diode Operating junction and storage temperatures IFM TEST CONDITIONS MAX. UNITS 200 V Total device, rated VR, TC = 159 °C 6 A 50 Rated VR , square wave, 20 kHz, TC = 159 °C TJ, TStg 6 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 3 A - - 1 IF = 3 A, TJ = 125 °C - - 0.9 IF = 6 A - - 1.2 IR = 100 μA IF = 6 A, TJ = 125 °C - - 1.08 VR = VR rated - - 5 TJ = 125 °C, VR = VR rated - - 100 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 200 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 02-Aug-12 Document Number: 94743 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 20 35 TJ = 25 °C - 19 - - 26 - - 3.1 - - 4.6 - TJ = 25 °C - 30 - TJ = 125 °C - 60 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr IF = 3 A VR = 160 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - - 5 Thermal resistance, junction to ambient per leg RthJA - - 80 Thermal resistance, case to heatsink RthCS - - - - 0.3 - - 0.01 - oz. - 12 (10) kgf · cm (lbf · in) Maximum junction and storage temperature range Weight Mounting torque 6.0 (5.0) Marking device Case style D-PAK Revision: 02-Aug-12 °C/W g 6CWH02FNH Document Number: 94743 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors 100 100 Reverse Current - I R (μA) 10 150˚C 125˚C 1 100˚C 0.1 0.01 25˚C 0.001 0 50 100 150 Reverse Voltage - VR (V) 200 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Tj = 175°C 100 1 Tj = 125°C Tj = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T J = 25˚C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) T J = 175˚C 10 10 1.6 1 Forward Voltage Drop - VFM (V) 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 02-Aug-12 Document Number: 94743 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors 50 Allowable Case Temperature (°C) 180 IF = 3 A IF = 6 A 40 170 DC trr ( nC ) 160 150 30 Square wave (D=0.50) rated Vr applied 140 20 see note (1) 130 0 1 2 3 4 Average Forward Current - IF(AV)(A) V R= 30V T J = 125˚C T J = 25˚C 5 10 100 1000 di F /dt (A/μs ) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 140 V R= 30V T J = 125˚C T J = 25˚C 120 RMS Limit 4 IF = 6 A IF = 3 A 100 3 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2 1 Qrr ( nC ) Average Power Loss ( Watts ) 5 80 60 40 DC 20 0 0 1 2 3 4 5 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics 0 100 1000 di F /dt (A/μs ) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 02-Aug-12 Document Number: 94743 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 02-Aug-12 Document Number: 94743 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6CWH02FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 C W H 02 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Center tap configuration- 4 - Package identifier: W = D-PAK 4 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - FN = TO-252AA 8 - None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-6CWH02FNHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-6CWH02FNTRHM3 2000 2000 13" diameter reel VS-6CWH02FNTRRHM3 3000 3000 13" diameter reel VS-6CWH02FNTRLHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 02-Aug-12 Document Number: 94743 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000