VISHAY SS34

SS32 thru SS36
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
TJ max.
125 °C, 150 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS32
SS33
SS34
SS35
SS36
S2
S3
S4
S5
S6
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at TL (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
dV/dt
10 000
V/µs
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
Revision: 17-Dec-12
TJ
TSTG
- 55 to + 125
- 55 to + 150
- 55 to + 150
°C
°C
Document Number: 88751
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32 thru SS36
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage (1)
SYMBOL
SS33
VF
3.0 A
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage (1)
SS32
SS34
SS35
0.5
SS36
UNIT
0.75
V
0.5
IR
TA = 100 °C
mA
20
10
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
SS32
SS33
SS34
RJA
55
RJL
17
SS35
SS36
UNIT
°C/W
Note
P.C.B. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.235
57T
850
7" diameter plastic tape and reel
SS34-E3/57T
SS34-E3/9AT
0.235
9AT
3500
13" diameter plastic tape and reel
SS34HE3/57T
(1)
0.235
57T
850
7" diameter plastic tape and reel
SS34HE3/9AT
(1)
0.235
9AT
3500
13" diameter plastic tape and reel
SS34HE3_A/H
(1)
0.235
H
850
7" diameter plastic tape and reel
0.235
I
3500
13" diameter plastic tape and reel
SS34HE3_A/I
(1)
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
100
3.5
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
3.0
2.5
SS32 thru SS34
SS35 and SS36
2.0
1.5
1.0
P.C.B. Mounted on
0.55" x 0.55" (14 mm x 14 mm)
Copper Pad Areas
0.5
0
At Rated TL
8.3 ms Single Half Sine-Wave
80
60
40
20
0
50
70
90
110
130
150
170
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 17-Dec-12
Document Number: 88751
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS32 thru SS36
www.vishay.com
Vishay General Semiconductor
1000
TJ = 125 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
SS32 thru SS34
SS35 and SS36
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS32 thru SS34
SS35 and SS36
0.01
10
0
0.2
0.6
0.4
0.8
1.0
1.4
1.2
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
SS32 thru SS34
SS35 and SS36
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10
TA = 125 °C
1
0.1
TA = 75 °C
0.01
TA = 25 °C
0.001
0
20
40
60
80
10
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Current Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 17-Dec-12
Document Number: 88751
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000