RB751SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6 mm
Connection Diagram
1
2
2
SOD-923
Marking: AD
Absolute Maximum Ratings *
Symbol
1
TA = 25°C unless otherwise noted
Parameter
Value
Unit
30
V
Average Rectified Forward Current
30
mA
Forward Surge Current
( 8.3mS Single Half Sine-Wave)
200
mA
PD
Power Dissipation
227
mW
TJ, TSTG
Operating Junction & Storage Temperature Range
-55 to +150
°C
Value
Unit
550
°C/W
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
IFSM
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient *
* Minimum land pad.
Electrical Characteristics
Symbol
Parameter
TA=25°C unless otherwise noted
Test Conditions
Min.
Max.
30
Unit
VR
Breakdown Voltage
IR = 10μA
VF
Forward Voltage
IF = 1mA
370
mV
IR
Reverse Leakage
VR = 30V
0.5
μA
trr
Reverse Recovery Time
IF = IR= 10mA, irr= 0.1IR
8.0
nS
Cj
Junction Capacitance
VR = 1V, f = 1.0MHz
2.5
pF
© 2007 Fairchild Semiconductor Corporation
RB751SL Rev. 1.0.0
V
www.fairchildsemi.com
1
RB751SL — Schottky Barrier Diodes
December 2007
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
100
100000
Reverse Current, IR[nA]
Forward Current, IF[mA]
o
TJ=125 C
o
T J=125 C
o
TJ=75 C
10
o
TJ=25 C
1
0.2
0.4
0.6
0.8
10000
o
TJ=75 C
1000
100
o
TJ=25 C
10
1.0
10
Figure 3. Junction Capacitance
30
Figure 4. Power Derating
3.0
300
f=1mhz
2.8
250
Power Dissipation, [mW]
Juntion Capacitance, CJ[pF]
20
Reverse Voltage, VR[V]
Forward Voltage Drop, V F[V]
2.5
2.3
2.0
1.8
1.5
200
150
100
50
1.3
1.0
0
0
2
4
6
8
10
25
50
75
100
125
150
o
Ambient Temperature, T a[ C]
Reverse Voltage, VR[V]
© 2007 Fairchild Semiconductor Corporation
RB751SL Rev. 1.0.0
0
www.fairchildsemi.com
2
RB751SL — Schottky Barrier Diodes
Typical Performance Characteristics
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RB751SL — Schottky Barrier Diodes
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Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
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Rev. I31
© 2007 Fairchild Semiconductor Corporation
RB751SL Rev. 1.0.0
www.fairchildsemi.com
4
RB751SL Schottky Barrier Diodes
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