CMHD3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage. MARKING CODE: C95 SOD-123 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRM VRWM 150 125 V 150 mA Continuous Forward Current IO IF 225 mA Recurrent Peak Forward Current if 600 mA IFSM IFSM 500 mA 4.0 A 400 mW Peak Working Reverse Voltage Average Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PD TJ, Tstg ΘJA UNITS V -65 to +150 °C 312.5 °C/W MAX UNITS 1.0 nA 500 nA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR VR=125V VR=125V, TA=125°C VR=125V, TA=150°C IR IR IR MIN 3.0 μA 300 nA 0.54 0.69 V IF=5.0mA 0.62 0.77 V IF=10mA IF=50mA 0.65 0.80 V 0.75 0.88 V IF=100mA IF=200mA 0.79 0.92 V 0.83 1.00 V 8.0 pF 3.0 μs BVR VR=30V, TA=125°C IR=100μA 150 VF IF=1.0mA VF VF VF VF VF CT trr VR=0, f=1.0MHz VR=3.5V, IF=10mA, RL=1.0kΩ V R5 (5-August 2010) CMHD3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-123 CASE - MECHANICAL OUTLINE LEAD CODE 1) Cathode 2) Anode MARKING CODE: C95 R5 (5-August 2010) w w w. c e n t r a l s e m i . c o m