CENTRAL CMLT5078E_10

CMLT5078E NPN/PNP
CMLT5087E PNP/PNP
CMLT5088E NPN/NPN
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON DUAL TRANSISTORS
SOT-563 CASE
MAXIMUM RATINGS: (TA=25oC)
♦ Collector-Base Voltage
♦Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5078E,
CMLT5087E, and CMLT5088E, are Silicon transistors
in a PICOmini™ surface mount package with enhanced
specifications designed for applications requiring high
gain and low noise.
MARKING CODE & CONFIGURATION:
CMLT5078E: DUAL, COMPLEMENTARY: L78
CMLT5087E: DUAL, PNP: L87
CMLT5088E: DUAL, NPN: L88
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
UNITS
V
V
V
mA
mW
o
C
o
C/W
50
50
5.0
100
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25oC unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN
PNP
MAX
ICBO
IEBO
♦BVCBO
♦BVCEO
♦ BVEBO
♦VCE(SAT)
♦♦ VCE(SAT)
VCB=20V
VEB=3.0V
150
V
IC=1.0mA
50
65
105
V
IE=100µA
5.0
8.7
7.5
45
50
100
mV
110
225
400
mV
700
700
800
mV
900
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
300
430
390
hFE
VCE=5.0V, IC=1.0mA
300
435
380
VCE=5.0V, IC=10mA
300
430
350
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500µA, f=20MHz
50
125
75
hfe
NF
♦
♦♦
nA
135
♦ hFE
Cib
nA
50
50
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
Cob
50
IC=100µA
VBE(SAT)
♦hFE
♦♦ hFE
♦ fT
UNITS
100
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz
V
350
MHz
4.0
pF
15
pF
1400
3.0
dB
Enhanced specification.
Additional Enhanced specification.
R3 (20-January 2010)
CMLT5078E NPN/PNP
CMLT5087E PNP/PNP
CMLT5088E NPN/NPN
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON DUAL TRANSISTORS
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMLT5087E
CMLT5078E
CMLT5088E
MARKING CODE: L87
MARKING CODE: L78
MARKING CODE: L88
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
R3 (20-January 2010)
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