EIC 10A05

10A01-10A07
SILICON RECTIFIER DIODES
D6
PRV : 50 - 1000 Volts
Io : 10 Amperes
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
FEATURES :
* Diffused Junction
* High current capability and Low Forward
Voltage Drop
* Surge Overload Rating to 600A Peak
* Low Reverse Leakage Current
* Pb / RoHS Free
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
* Case : molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.049 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Average Rectified Output Current (Note 1) Ta = 50°C
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single half sine wave superimposed on rated load
(JEDEC Method)
IFSM
600
A
Maximum Forward Voltage at IF = 10 Amps.
VF
1.3
V
IR
10
100
µA
µA
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
IR(H)
Typical Junction Capacitance (Note 2)
Cj
80
pF
RθJC
0.8
°C/W
TJ, TSTG
- 65 to + 150
°C
Thermal Resistance
Operating and Storage Temperature Range
150
Notes :
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.
Page 1 of 2
Rev. 01 : October 27, 2005
RATING AND CHARACTERISTIC CURVES ( 10A01 - 10A07 )
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1000
10
PEAK FORWARD SURGE
CURRENT (A)
AVERAGE FORWARD OUTPUT
CURRENT (A)
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
6.0
4.0
2.0
0
8.3 ms Single Half Sine-Wave
JEDC Method
800
600
400
200
0
0
25
50
75
100
125
150
175
1
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
0.1
6
10
20
40
60
100
100
TJ = 25 °C
f = 1MHz
10A01-10A04
10
10A05-10A07
1.0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
Page 2 of 2
4
FIG.4 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCCE (pF)
INSTANTANEOUS FORWARD
CURRENT (A)
100
1.0
2
NUMBER OF CYCLES AT 60Hz
0
10
100
REVERSE VOLTAGE (V)
Rev. 01 : October 27, 2005