TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Equivalent Circuit C B TO-220 1 1.Base 2.Collector R1 3.Emitter R1 @ 8kW R2 @ 0.12k W Absolute Maximum Ratings* Symbol VCBO VCEO R2 E T a = 25°C unless otherwise noted Collector-Base Voltage Parameter : TIP120 : TIP121 : TIP122 Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 Ratings 60 80 100 Units V V V 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) IB Base Current (DC) PC 8 A 120 mA W Collector Dissipation (Ta=25°C) 2 Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 www.fairchildsemi.com 1 TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor October 2008 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122 ICEO Collector Cut-off Current ICBO Collector Cut-off Current Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V : TIP120 : TIP121 : TIP122 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 0.5 0.5 0.5 mA mA mA : TIP120 : TIP121 : TIP122 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 0.2 0.2 0.2 mA mA mA 2 mA 2.0 4.0 V V IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE * DC Current Gain VCE = 3V,IC = 0.5A VCE = 3V, IC = 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA IC = 5A, IB = 20mA VBE(on) * Base-Emitter On Voltage VCE = 3V, IC = 3A 2.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF 1000 1000 * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 www.fairchildsemi.com 2 TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor Electrical Characteristics* Ta=25°C unless otherwise noted VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 hFE, DC CURRENT GAIN VCE = 4V 1000 100 0.1 1 3.5 IC = 250IB 3.0 2.5 2.0 1.5 1.0 VBE(sat) VCE (sat) 0.5 0.1 10 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 IC[A], COLLECTOR CURRENT Cib 10 0.1 1 10 100 1 0.1 0.01 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE s 5m Cob s 1m 100 DC Cob[pF] Cib[pF], CAPACITANCE s 0m 10 ms 0 50 f=0.1MHz TIP120 TIP121 TIP122 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Output and Input Capacitance vs. Reverse Voltage Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating © 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 www.fairchildsemi.com 3 TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor Typical characteristics TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor Mechanical Dimensions TO220 © 2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. A1 www.fairchildsemi.com 5 TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor TRADEMARKS