Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.0 42.8 8.0 --31.0 1920 MHz 16.0 43.7 8.1 --32.6 2025 MHz 15.9 42.0 8.1 --31.2 • Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 170 Watts (1,2) Features • Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz. • Designed for Wideband Applications that Require 160 MHz Signal Bandwidth • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. MRF8P20140WHR3 MRF8P20140WHSR3 1880--2025 MHz, 24 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465M--01, STYLE 1 NI--780--4 MRF8P20140WHR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF8P20140WHSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 125 °C Operating Junction Temperature (3) TJ 225 °C CW 140 0.66 W W/°C CW Operation @ TC = 25°C Derate above 25°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Continuous use at maximum temperature will affect MTTF. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF8P20140WHR3 MRF8P20140WHSR3 1 Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz Case Temperature 96°C, 130 W CW(2), 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz Value (1) RθJC 0.68 0.40 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1.1 1.8 2.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDA = 500 mAdc) VGSA(Q) — 2.6 — Vdc Fixture Gate Quiescent Voltage (5) (VDD = 28 Vdc, IDA = 500 mAdc, Measured in Functional Test) VGGA(Q) 4.5 5.2 6.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (3) On Characteristics (3,4) Functional Tests (4,6,7) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15.0 16.0 18.0 dB Drain Efficiency ηD 37.5 41.2 — % PAR 7.3 7.7 — dB ACPR — --31.9 --29.5 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Performance (7) Typical Broadband — (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.0 42.8 8.0 --31.0 1920 MHz 16.0 43.7 8.1 --32.6 2025 MHz 15.9 42.0 8.1 --31.2 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3. Each side of device measured separately. 4. VDDA and VDDB must be tied together and powered by a single DC power supply. 5. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 6. Part internally matched both on input and output. 7. Measurement made with device in a Symmetrical Doherty configuration. (continued) MRF8P20140WHR3 MRF8P20140WHSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1880--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 140 — W Pout @ 3 dB Compression Point (2) P3dB — 170 (3) — W — 133 — IMD Symmetry @ 24 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 240 — MHz Gain Flatness in 145 MHz Bandwidth @ Pout = 24 W Avg. GF — 0.25 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.013 — dB/°C ∆P1dB — 0.003 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (3) MHz 1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 3 R2 VGGA R3 C15 C14 C6 C7 R6 C1 C12* C23 C26 Z1 C3* C5 C10 C11 MRF8P20140W Rev. 1.2 C CUT OUT AREA C2* R1 C19 C16 C4 C9 VDDA C18 C17 P C21 C13* R7 C22 C8 C20 R5 C25 R4 C24 VGGB VDDB Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply. Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC C2, C3 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC C4, C8, C18, C24 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C5 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC C6, C10, C12, C13, C14, C20 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C11 10 μF, 32 V Chip Capacitors GRM32ER61H106KA12L Murata C9, C17 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC C15, C21 6.8 μF, 50 V Chip Capacitors C4532X7R1H685KT TDK C16, C22 2.2 μF, 100 V Chip Capacitors C3225X7R2A225KT TDK C19, C25 220 μF, 100 V Chip Capacitors EEV--FK2A221M Panasonic--ECG C23 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC C26 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC R1 50 Ω, Chip Resistor ATCCW12010T0050GBK ATC R2, R3, R4, R5 1.5 kΩ, 1/4 W Chip Resistors CRCW12061K50FKEA Vishay R6, R7 2.2 Ω, 1/4 W Chip Resistors CRCW12062R2FNEA Vishay Z1 1700--2000 MHz Band 90°, 3 dB Hybrid Coupler 1P503S Anaren PCB 0.020″, εr = 3.5 R04350B Rogers MRF8P20140WHR3 MRF8P20140WHSR3 4 RF Device Data Freescale Semiconductor Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 5 40 VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, 30 MHz Carrier Spacing, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 16.4 16.2 16 15.8 38 36 Gps PARC 15.6 15.2 1900 1920 1940 1960 1980 2000 --25 --31 --1.2 --26 --33 --34 ACPR 15 1880 --1 --32 IM3 15.4 --30 --1.4 --1.6 --1.8 --35 2040 2020 PARC (dB) 16.6 Gps, POWER GAIN (dB) 42 ηD --27 --28 --29 --30 --2 IM3, THIRD ORDER INTERMODULATION (dBc) 44 16.8 ACPR (dBc) 17 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 16.6 VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16.4 16.2 16 42 ηD 41 40 39 Gps 15.8 ACPR --30 --1.6 --31 --1.7 15.6 --32 15.4 --33 PARC --34 15.2 15 1880 1900 1920 1940 1960 1980 2000 2020 --1.8 --1.9 --2 --35 2040 PARC (dB) 43 ACPR (dBc) 17 16.8 ηD, DRAIN EFFICIENCY (%) Figure 4. 2--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg. --2.1 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg. --20 VDD = 28 Vdc, Pout = 24 W (PEP) IDQA = 500 mA, VGSB = 1.2 Vdc --30 IM3--L IM5--L --40 IM5--U --50 IM7--U --60 --70 IM3--U IM7--L Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1920 MHz 1 10 100 300 TWO--TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing MRF8P20140WHR3 MRF8P20140WHSR3 6 RF Device Data Freescale Semiconductor 16 0 15.5 15 14.5 14 13.5 VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f = 1920 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 60 --22 50 --24 ηD --1 40 Gps --2 30 --1 dB = 14.5 W --3 ACPR 20 --2 dB = 25 W --3 dB = 35 W --4 --5 PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 40 --26 --28 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS --30 10 --32 0 --34 60 0 50 --10 60 50 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power Gps, POWER GAIN (dB) 18 Gps 1880 MHz 1920 MHz 2025 MHz 2025 MHz 16 ηD 1880 MHz 14 ACPR 1920 MHz 1880 MHz 2025 MHz 1920 MHz 12 10 1 10 30 20 10 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 8 40 100 0 200 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQA = 500 mA VGSB = 1.2 Vdc, Single--Carrier W--CDMA ηD, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power Gps, POWER GAIN (dB) 18 Gps 16 --10 18 --20 15 --30 12 IM5--L 14 IM3--U --40 IM5--U IM3--L IM7--U 12 --50 IM7--L 10 --60 Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 8 10 1 100 --70 200 GAIN (dB) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f1 = 1880 MHz f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth IM3, IM5, IM7 (dBc) 20 9 VDD = 28 Vdc Pin = 0 dBm IDQA = 500 mA VGSB = 1.2 Vdc 6 3 0 1650 1725 1800 1875 1950 2025 2100 2175 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 9. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7 versus Output Power Figure 10. Broadband Frequency Response 2250 MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 7 W--CDMA TEST SIGNAL --20 100 --40 --50 1 --60 Input Signal (dB) PROBABILITY (%) 10 0.1 --70 --80 0.01 --90 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --30 0 2 4 6 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --100 --110 8 10 --120 --75 12 --60 --45 0 15 30 45 60 75 Figure 12. 2-Carrier W-CDMA Spectrum Figure 11. CCDF W--CDMA IQ Magnitude Clipping, 2--Carrier Test Signal 100 10 0 10 --10 3.84 MHz Channel BW --20 1 Input Signal --30 0.1 (dB) PROBABILITY (%) --15 f, FREQUENCY (MHz) PEAK--TO--AVERAGE (dB) 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 --30 +IM3 in 3.84 MHz BW 0 2 4 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 14. Single--Carrier W--CDMA Spectrum MRF8P20140WHR3 MRF8P20140WHSR3 8 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB P3dB f (MHz) Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 1880 5.35 -- j5.03 2.36 -- j4.84 49.7 93 53.7 50.5 113 56.2 1930 7.39 -- j5.10 2.57 -- j4.73 50.0 100 56.9 50.8 119 59.3 1990 9.46 -- j1.71 2.48 -- j5.11 50.0 100 56.4 50.7 118 58.6 2025 9.30 + j0.80 2.50 -- j5.30 50.0 100 56.7 50.7 118 59.1 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency P1dB P3dB f (MHz) Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 1880 5.35 -- j5.03 6.91 -- j4.37 47.6 57 64.6 48.2 67 65.2 1930 7.39 -- j5.10 6.36 -- j3.60 48.0 63 67.3 48.6 72 68.3 1990 9.46 -- j1.71 5.61 -- j3.11 48.0 63 67.2 48.6 72 67.8 2025 9.30 + j0.80 5.28 -- j2.88 47.9 61 66.5 48.5 70 67.3 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8P20140WHR3 MRF8P20140WHSR3 10 RF Device Data Freescale Semiconductor MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 11 MRF8P20140WHR3 MRF8P20140WHSR3 12 RF Device Data Freescale Semiconductor MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, Software and Tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P20140WH and MRF8P20140WHS parts will be available for 2 years after release of MRF8P20140WH and MRF8P20140WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P20140WH and MRF8P20140WHS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2011 Description • Initial Release of Data Sheet MRF8P20140WHR3 MRF8P20140WHSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P20140WHR3 MRF8P20140WHSR3 Document Number: RF Device Data MRF8P20140WH Rev. 0, 4/2011 Freescale Semiconductor 15