INFINEON IPB093N04LG

Type
IPB093N04L G
OptiMOS™3 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
V DS
40
V
R DS(on),max
9.3
mΩ
ID
50
A
1)
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPB093N04L G
Type
• Pb-free plating; RoHS compliant
Package
PG-TO263-3
Marking
093N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
50
V GS=10 V, T C=100 °C
38
V GS=4.5 V, T C=25 °C
46
V GS=4.5 V,
T C=100 °C
33
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
350
Avalanche current, single pulse 3)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
10
mJ
Gate source voltage
V GS
±20
V
1)
Rev. 2.0
J-STD20 and JESD22
page 1
2010-04-26
IPB093N04L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Value
T C=25 °C
IEC climatic category; DIN IEC 68-1
Parameter
Unit
47
W
-55 ... 175
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.2
minimal footprint
-
-
62
6 cm² cooling area 4)
-
-
40
40
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=16 µA
1.2
-
2
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=40 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
10.5
13.1
mΩ
V GS=10 V, I D=50 A
-
7.8
9.3
-
1.3
-
Ω
37
74
-
S
Gate resistance
RG
Transconductance
g fs
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
|V DS|>2|I D|R DS(on)max,
I D=50 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2010-04-26
IPB093N04L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1600
2100
-
320
430
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=20 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
14
-
Turn-on delay time
t d(on)
-
4.7
-
Rise time
tr
-
2.8
-
Turn-off delay time
t d(off)
-
19
-
Fall time
tf
-
3.2
-
Gate to source charge
Q gs
-
5.6
-
Gate charge at threshold
Q g(th)
-
2.6
-
Gate to drain charge
Q gd
-
2.3
-
Switching charge
Q sw
-
5.2
-
Gate charge total
Qg
-
21
28
Gate plateau voltage
V plateau
-
3.4
-
Gate charge total
Qg
V DD=20 V, I D=30 A,
V GS=0 to 4.5 V
-
13
17
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
19
-
Output charge
Q oss
V DD=20 V, V GS=0 V
-
15
-
-
-
39
-
-
350
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=20 V, I D=30 A,
V GS=0 to 10 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.96
1.2
Reverse recovery charge
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
-
18
-
5)
Rev. 2.0
T C=25 °C
A
V
nC
See figure 16 for gate charge parameter definition
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2010-04-26
IPB093N04L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
60
50
40
40
I D [A]
P tot [W]
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10
2
0.5
10 µs
1
0.2
Z thJC [K/W]
100 µs
I D [A]
DC
101
1 ms
0.1
0.05
0.02
0.1
10 ms
0.01
100
single pulse
0.01
10-1
10-1
Rev. 2.0
100
V DS [V]
101
102
page 4
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
2010-04-26
IPB093N04L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
140
20
10 V
3.5 V
4V
120
5V
16
4.5 V
100
R DS(on) [mΩ]
4.5 V
I D [A]
80
4V
60
12
5V
10 V
8
40
3.5 V
20
4
3.2 V
3V
2.8 V
0
0
1
2
0
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
140
100
120
80
100
60
I D [A]
g fs [S]
80
60
40
40
20
20
25 °C
175 °C
0
0
0
1
2
3
4
5
V GS [V]
Rev. 2.0
0
20
40
60
I D [A]
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IPB093N04L G
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
20
2.5
16
2
12
1.5
V GS(th) [V]
R DS(on) [mΩ]
9 Drain-source on-state resistance
98 %
8
typ
4
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
25 °C, 98%
Coss
100
175 °C, 98%
I F [A]
C [pF]
25 °C
102
Crss
10
10
1
100
1
0
10
20
30
40
V DS [V]
Rev. 2.0
175 °C
0.0
0.5
1.0
1.5
2.0
V SD [V]
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2010-04-26
IPB093N04L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
12
100
20 V
8V
10
32 V
8
100 °C
10
V GS [V]
I AV [A]
25 °C
150 °C
6
4
2
0
1
10
-1
10
0
10
1
10
t AV [µs]
2
10
0
3
15 Drain-source breakdown voltage
4
8
12
16
20
24
Q gate [nC]
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
V GS
Qg
V BR(DSS) [V]
40
35
V g s(th)
30
25
Q g(th)
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.0
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2010-04-26
IPB093N04L G
Package Outline
Footprint:
Rev. 2.0
PG-TO263-3
Packaging:
page 8
2010-04-26
IPB093N04L G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 9
2010-04-26