Type IPB093N04L G OptiMOS™3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS(on),max 9.3 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPB093N04L G Type • Pb-free plating; RoHS compliant Package PG-TO263-3 Marking 093N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 50 V GS=10 V, T C=100 °C 38 V GS=4.5 V, T C=25 °C 46 V GS=4.5 V, T C=100 °C 33 Unit A Pulsed drain current2) I D,pulse T C=25 °C 350 Avalanche current, single pulse 3) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 10 mJ Gate source voltage V GS ±20 V 1) Rev. 2.0 J-STD20 and JESD22 page 1 2010-04-26 IPB093N04L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 47 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 62 6 cm² cooling area 4) - - 40 40 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=16 µA 1.2 - 2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=40 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 10.5 13.1 mΩ V GS=10 V, I D=50 A - 7.8 9.3 - 1.3 - Ω 37 74 - S Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=50 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2010-04-26 IPB093N04L G Parameter Values Symbol Conditions Unit min. typ. max. - 1600 2100 - 320 430 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=20 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 14 - Turn-on delay time t d(on) - 4.7 - Rise time tr - 2.8 - Turn-off delay time t d(off) - 19 - Fall time tf - 3.2 - Gate to source charge Q gs - 5.6 - Gate charge at threshold Q g(th) - 2.6 - Gate to drain charge Q gd - 2.3 - Switching charge Q sw - 5.2 - Gate charge total Qg - 21 28 Gate plateau voltage V plateau - 3.4 - Gate charge total Qg V DD=20 V, I D=30 A, V GS=0 to 4.5 V - 13 17 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 19 - Output charge Q oss V DD=20 V, V GS=0 V - 15 - - - 39 - - 350 V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=20 V, I D=30 A, V GS=0 to 10 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.96 1.2 Reverse recovery charge Q rr V R=20 V, I F=I S, di F/dt =400 A/µs - 18 - 5) Rev. 2.0 T C=25 °C A V nC See figure 16 for gate charge parameter definition page 3 2010-04-26 IPB093N04L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 60 50 40 40 I D [A] P tot [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 10 2 0.5 10 µs 1 0.2 Z thJC [K/W] 100 µs I D [A] DC 101 1 ms 0.1 0.05 0.02 0.1 10 ms 0.01 100 single pulse 0.01 10-1 10-1 Rev. 2.0 100 V DS [V] 101 102 page 4 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] 2010-04-26 IPB093N04L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 140 20 10 V 3.5 V 4V 120 5V 16 4.5 V 100 R DS(on) [mΩ] 4.5 V I D [A] 80 4V 60 12 5V 10 V 8 40 3.5 V 20 4 3.2 V 3V 2.8 V 0 0 1 2 0 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 100 120 80 100 60 I D [A] g fs [S] 80 60 40 40 20 20 25 °C 175 °C 0 0 0 1 2 3 4 5 V GS [V] Rev. 2.0 0 20 40 60 I D [A] page 5 2010-04-26 IPB093N04L G 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 20 2.5 16 2 12 1.5 V GS(th) [V] R DS(on) [mΩ] 9 Drain-source on-state resistance 98 % 8 typ 4 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 25 °C, 98% Coss 100 175 °C, 98% I F [A] C [pF] 25 °C 102 Crss 10 10 1 100 1 0 10 20 30 40 V DS [V] Rev. 2.0 175 °C 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2010-04-26 IPB093N04L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 12 100 20 V 8V 10 32 V 8 100 °C 10 V GS [V] I AV [A] 25 °C 150 °C 6 4 2 0 1 10 -1 10 0 10 1 10 t AV [µs] 2 10 0 3 15 Drain-source breakdown voltage 4 8 12 16 20 24 Q gate [nC] 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2010-04-26 IPB093N04L G Package Outline Footprint: Rev. 2.0 PG-TO263-3 Packaging: page 8 2010-04-26 IPB093N04L G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2010-04-26