QSD2030F Plastic Silicon Photodiode Features • • • • • • • • PIN Photodiode Package Type: T-1 3/4 (5 mm Lens Diameter) Wide Reception Angle: 40° Daylight Filter Package Material and Color: Black Epoxy High Sensitivity Peak Sensitivity λ= 880 nm Radiant Sensitive Area: 1.245 mm x 1.245 mm Schematic CATHODE ANODE Ordering Information Part Number Operating Temperature Package Packing Method QSD2030F -40 to +100°C T-1 3/4 Bulk © 2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.2.0 www.fairchildsemi.com 1 QSD2030F — Plastic Silicon Photodiode June 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise specified. Symbol Parameter Min. TOPR Operating Temperature -40 to +100 TSTG Storage Temperature -40 to + 100 TSOL-I Soldering Temperature (Iron)(1,2,3) 240 for 5 s TSOL-F Soldering Temperature (Flow)(1,2) 260 for 10 s VBR PD Reverse Breakdown Voltage Power Dissipation (4) Unit °C 50 V 100 mW Notes: 1. RMA flux is recommended. 2. Methanol or isopropyl alcohols are recommended as cleaning agents. 3. Soldering iron tip 1/16 inch (1.6 mm) minimum from housing. 4. Derate power dissipation linearly 1.33 mW/°C above 25°C. Electrical / Optical Characteristics Values are at TA = 25°C unless specified otherwise. Symbol λPS λSR Parameter Test Conditions Min. Peak Sensitivity Wavelength Wavelength Sensitivity Range 700 Reception Angle VF Forward Voltage IF = 80 mA ID Reverse Dark Current VR = 10 V, Ee = 0 IL Reverse Light Current Ee = 0.5 mW/cm2, VR = 5 V, λ = 950 nm VO Open Circuit Voltage Ee = 0.5 mW/cm2, λ = 880 nm TCV Temperature Coefficient of VO Short Circuit Current TCI Temperature Coefficient of ISC 1100 Ee = 0.5 mW/cm2, λ = 880 nm nm o 1.3 V 10 15 Units nm ±20 nA 25 μA 420 mV +0.6 mV/K 50 μA +0.3 %/K pF C Capacitance VR = 0, f = 1 MHz, Ee = 0 60 tr Rise Time 5 tf Fall Time VR = 5 V, RL = 50 Ω, λ = 950 nm © 2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.2.0 Max. 880 Θ ISC Typ. 5 ns www.fairchildsemi.com 2 QSD2030F — Plastic Silicon Photodiode Absolute Maximum Ratings QSD2030F — Plastic Silicon Photodiode Typical Performance Characteristics Figure 1. Reverse Light Current vs. Emitter Output Power Figure 2. Angular Response Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Reverse Voltage © 2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.2.0 www.fairchildsemi.com 3 QSD2030F — Plastic Silicon Photodiode Physical Dimensions T-1 3/4 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) Notes: 1.Dimensions for all drawings are in inches (mm). 2.Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. Figure 5. T-1 3/4, 5 MM LED (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-DBD111A-LOCZ.pdf. © 2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.2.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver¥ OptoHiT¥ OPTOLOGIC® OPTOPLANAR® 2Cool¥ AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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