D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector-Current (Pulse) 20 A PC Collector Dissipation (TC=25°C) 50 W Collector Dissipation (Ta=25°C) 1.67 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC= 0 5 V ICES Collector Cut-off Current VCE = Rated VCEO, VEB = 0 10 μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 μA hFE DC Current Gain VCE = 1V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A 1.5 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 50 MHz Cob Output Capacitance VCB = 10V, f = 1MHz 130 pF tON Turn On Time 300 ns 500 ns 140 ns tSTG Storage Time tF Fall Time 60 VCC = 20V, IC = 5A IB1 = - IB2 = 0.5A NOTES: 1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) These ratings are based on a maximum junction temperature of 150degrees C. © 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 www.fairchildsemi.com 1 D44H11TU — NPN Epitaxial Silicon Transistor March 2009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 1V 100 10 1 0.01 0.1 1 10 IC = 10 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1 s 1μ IC[A], COLLECTOR CURRENT DC s 100 10 1m Cob[pF], CAPACITANCE f=100MHZ 10μs 100μs 44H 1,2 44H 4,5 44H 7,8 44H 10,11 0.1 10 1 10 1 100 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 60 PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 5. Power Derating © 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 www.fairchildsemi.com 2 D44H11TU — NPN Epitaxial Silicon Transistor Typical Performance Characteristics D44H11TU — NPN Epitaxial Silicon Transistor Mechanical Dimensions TO-220 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I39 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com