MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 30 V Collector−Base Voltage VCBO 40 V Emitter−Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) PD PD RqJA 342 178 366 mW mW °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) PD PD RqJA 665 346 188 mW mW °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 4 6 5 1 2 SC−74 CASE 318F STYLE 2 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. DB M G G DB = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBT2131T1 SC−74 3000/Tape & Reel SC−74 (Pb−Free) 3000/Tape & Reel MMBT2131T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBT2131T1/D MMBT2131T1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Base Breakdown Voltage (IC = 100 mA) V(BR)CBO 40 − − V Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 30 − − V Emitter−Base Breakdown Voltage (IE = 100 mA) V(BR)EBO 5.0 − − V (VCB = 25 V, IE = 0 A) (VCB = 25 V, IE = 0 A, TA = 125°C) ICBO − − − − 1.0 10 mA (VEB = 5.0 V, IC = 0 A) IEBO − − 10 mA (VCE = 3.0 V, IC = 100 mA) hFE 150 − − V Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.25 V Collector −Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VCE(sat) − − 0.4 V Base−Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VBE(sat) − − 1.1 V (IC = 700 mA, VCE = 1.0 V) VBE(on) − − 1.0 V Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain 0.5 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) Collector−Emitter Saturation Voltage 0.4 0.3 0.7 A 0.2 0.5 A 0.1 0 10 mA IC = 1.0 mA 0.000001 0.00001 0.1 A 0.0001 0.001 0.01 0.1 0.2 0.5 A 0.15 0.1 10 mA 0.05 0.1 A IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 0.1 1.0 1000 VBE(sat) VOLTAGE (V) h FE , DC CURRENT GAIN VCE = 3.0 V 150°C 25°C 0.1 −40°C VCE(sat) 100 0.01 0.1 1.0 0.01 0.001 IC/IB = 10 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages http://onsemi.com 2 1.0 MMBT2131T1 1.0 0.16 T = 85°C 0.1 VCE(sat) 0.01 0.01 0.1 0°C 0.08 0.04 0 1.0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. Collector−Emitter Saturation Voltage 0.6 1.0 T = 85°C IC/IB = 100 0.5 −40°C 25°C VBE(on) , VOLTAGE (V) VCE(sat), VOLTAGE (V) 0.12 IC/IB = 100 0.001 0°C 0.4 0.3 0.2 0.75 25°C 0.5 150°C 0.25 0.1 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 25°C IC/IB = 10 VCE(sat) , VOLTAGE (V) VOLTAGE (V) VBE(sat) VCE = 1.0 V 0.1 0 1.0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 0.01 0.0001 0.001 0.01 0.1 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 3 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) 10 100 MMBT2131T1 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. D 6 5 4 2 3 E HE 1 b DIM A A1 b c D E e L HE q e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° STYLE 2: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° NO CONNECTION COLLECTOR EMITTER NO CONNECTION COLLECTOR BASE SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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