UNISONIC TECHNOLOGIES CO., LTD 2N3773/2N6099 POWER TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverts. 1 TO-3 FEATURES * Complement Characterized for linear operation * High DC Current Gain and low saturation voltage hFE>15(8A, 4V) VCE(SAT)<1.4V(IC=8A, IB=0.8A) * For Low Distortion Complementary Designs ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N3773L-T30-Y 2N3773G-T30-Y 2N6099L-T30-Y 2N6099G-T30-Y www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD Package TO-3 TO-3 Pin Assignment 1 2 3 B E C B E C Packing Tray Tray 1 of 3 QW-R205-001,Ba 2N3773/2N6099 POWER TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEX 160 V TC=25℃ 150 W Power Dissipation PC Dertate Above 25℃ 0.855 W/℃ Continuous 16 A Collector Current IC Peak 30 A Continuous 4 A Base Current IB Peak 15 A Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: PW<=5ms, Duty Cycle<=10% THERMAL DATA PARAMETER SYMBOL θJC Junction to Case RATINGS 1.17 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current SYMBOL TEST CONDITIONS MIN BVCBO BVCEX BVCER ICBO IEBO IC=0.2A, IB=0 IC=0.1A,VBE(OFF)=1.5V, RBE=100Ω IC=0.1A, RBE=100Ω VCB=140V, IE=0 VBE=7V, IC=0 VCE=140V,VBE(OFF)=1.5V VCE=140V,VBE(OFF)=1.5V,TC=150℃ 160 160 150 VCE=4V, IC=8A VCE=4V, IC=16A IC=8A, IB=800mA IC=16A, IB=3.2A IC=8A, VCE=4V 15 5 IC=1A, VCE=4V, f=1kHz 40 IC=1A, f=50kHz 4 ICEX TYP MAX UNIT 2 5 2 10 V V V mA mA mA mA ON CHARACTERISTICS DC Current Gain (Note) Collector-Emitter Saturation Voltage hFE1 hFE2 VCE(SAT) Base-Emitter Saturation Voltage VBE(ON) DYNAMIC CHARACTERISTICS Small Signal Current Gain hFE Magnitade Of Commom-Emitter Small Signal, Short Circuit Forward |hFE| Current Transfer Ratio Second Breakdown Collector With IS/b Base Forward Biased Note: Pulse Test: PW<=300μs, Duty Cycle<=2% t=1s(non-repetive), VCE=100V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 60 1.4 4 2.2 1.5 V V V A 2 of 3 QW-R205-001,Ba 2N3773/2N6099 POWER TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R205-001,Ba