UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 Lead Free:1 Halogen Free: 2SB772L 2SB772G ORDERING INFORMATION Normal 2SB772-x-T60-K 2SB772-x-T6C-K 2SB772-x-TM3-T 2SB772-x-TN3-R 2SB772-x-T9N-B 2SB772-x-T9N-K Ordering Number Lead Free 2SB772L-x-T60-K 2SB772L-x-T6C-K 2SB772L-x-TM3-T 2SB772L-x-TN3-R 2SB772L-x-T9N-B 2SB772L-x-T9N-K Halogen Free 2SB772G-x-T60-K 2SB772G-x-T6C-K 2SB772G-x-TM3-T 2SB772G-x-TN3-R 2SB772G-x-T9N-B 2SB772G-x-T9N-K www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-126 TO-126C TO-251 TO-252 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B B C E B C E E C B E C B Packing Bulk Bulk Tube Tape Reel Tape Box Bulk 1 of 4 QW-R213-016,E 2SB772 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Pulse Collector Current Base Current TO-92NL TO-251/TO-252/ TO-126/TO-126C Collector Dissipation (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB RATINGS -40 -30 -5 -3 -7 -0.6 0.5 UNIT V V V A A A W 1 W PC ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300μs, Duty Cycle<2% TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-30V ,IE=0 VCE=-30V ,IB=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0,f=1MHz MIN -40 -30 -5 TYP MAX -1000 -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 UNIT V V V nA nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 of 4 QW-R213-016,E 2SB772 TYPICAL CHARACTERICS Derating Curve of Safe Operating Areas Static Characteristics 150 -IB=9mA 1.2 - Ic Derating (%) -IB=8mA -IB=7mA -IB=6mA -IB=5mA 0.8 S/ b 50 ite d n -IB=3mA d ite lim 0.4 lim tio ipa -IB=4mA 100 ss Di -Collector Current, Ic (A) 1.6 -IB=2mA -IB=1mA 0 0 0 4 8 12 16 20 -50 0 -Collector-Emitter voltage (V) 50 100 150 200 Case Temperature, Tc (℃) Power Derating Collector Output Capacitance 10 3 Output Capacitance(pF) Power Dissipation(W) 12 8 4 10 10 0 10 -50 0 50 100 150 IE=0 f=1MHz 2 1 0 200 10 0 10 Case Temperature, Tc (℃) 10 -2 10 -3 Safe Operating Area 3 10 1 Ic(max),Pulse Ic(max),DC 10 mS 1m S S 1m 0. 10 -1 -Collector-Base Voltage(v) Current GainBandwidth Product VCE=5V 10 -Collector Current, Ic (A) Current GainBandwidth Product, fT (MHz) ■ PNP SILICON TRANSISTOR 2 IB=8mA 10 10 1 0 10 -2 10 -1 10 0 10 1 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 10 10 0 -1 -2 10 0 10 1 10 2 Collector-Emitter Voltage 3 of 4 QW-R213-016,E 2SB772 ■ PNP SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) DC Current Gain Saturation Voltage 3 10 4 10 -Saturation Voltage (mV) DC Current Gain, hFE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Collector Current, Ic (mA) VBE(SAT) 3 10 2 10 VCE(SAT) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Collector Current, Ic (mA) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-016,E