UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N60L-x-TA3-T 8N60G-x-TA3-T 8N60L-x-TF1-T 8N60G-x-TF1-T 8N60L-x-TF3-T 8N60G-x-TF3-T 8N60L-x-T2Q-T 8N60G-x-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-262 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube (1) T: Tube 8N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating (2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F (2) T2Q: TO-262 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-115,D 8N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage VDSS 8N60-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.5 A Continuous ID 7.5 A Drain Current 30 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 230 mJ Avalanche Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 147 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-262 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATING 62.5 62.5 0.85 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 8N60-A 8N60-B Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BVDSS VGS = 0 V, ID = 250 μA IDSS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V IGSS MIN TYP MAX UNIT 600 650 VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 μA VGS = 10 V, ID = 3.75 A VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 300V, ID = 7.5 A, RG = 25Ω (Note 1, 2) VDS= 480V,ID= 7.5A, VGS= 10 V (Note 1, 2) V V µA nA nA 10 100 -100 △BVDSS/△TJ ID = 250 μA, Referenced to 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.7 2.0 1.0 V/°C 4.0 1.2 V Ω 965 1255 105 135 12 16 pF pF pF 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 12 ns ns ns ns nC nC nC 2 of 8 QW-R502-115,D 8N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 7.5 A, Reverse Recovery Time tRR dIF/dt = 100 A/µs (Note 2) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 365 3.4 1.4 V 7.5 A 30 A ns µC 3 of 8 QW-R502-115,D 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-115,D 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS RL VDS 90% VDD VGS RG 10V D.U.T. VGS 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-115,D 8N60 Power MOSFET TYPICAL CHARACTERISTICS On-State Characteristics Drain Current, ID (A) 100 Transfer Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 10 10 1 Drain Current, ID (A) 5.0V 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°C 0.1 25°C 1 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) 4 3 VGS=20V 2 1 5 10 15 Drain Current, ID (A) 20 Ciss Capacitance (pF) 1500 1300 1100 Coss Crss 500 300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25°C 1 Notes: 1. VGS=0V 2. 250µs Test 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) 12 Gate-Source Voltage, VGS (V) Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1900 900 10 150°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Capacitance Characteristics (Non-Repetitive) 700 8 10 VGS=10V 1700 6 Body Diode Forward Voltage vs. Source Current TJ=25°C 0 4 Gate-Source Voltage, VGS (V) 5 0 Notes: 1. VDS=40V 2. 250µs Pulse Test 0.1 2 1 10 Drain-to-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage 6 150°C Gate Charge Characteristics ID=8A 10 VDS=300V 8 VDS=480V VDS=120V 6 4 2 0 0 5 10 15 20 25 30 Total Gate Charge, QG (nC) 6 of 8 QW-R502-115,D 8N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Temperature 1.2 On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 0.0 -100 Junction Temperature, TJ (°C) 100µs 1ms 10ms 1 Notes: 1. TJ=25°C 2. TJ=150°C 0.1 3. Single Pulse 1 50 100 150 200 8 Drain Current, ID (A) Drain Current, ID (A) 100µs DC 0 Maximum Drain Current vs. Case Temperature 10 Operation in This Area is Limited by RDS(on) 10 -50 Junction Temperature, TJ (°C) Maximum Safe Operating Area 100 Note: 1. VGS=10V 2. ID=4A 0.5 6 4 2 0 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (°C) Transient Thermal Response Curve Thermal Response, θJC (t) 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Notes: Single pulse 1. θJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-115,D 8N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-115,D