BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current (DC) 3.Emitter Value Units 400 200 V V 6 7 V A 10 4 A A ICP IB Collector Current (Pulse) Base Current PC TJ Collector Dissipation Junction Temperature 60 150 W °C TSTG Storage Temperature - 55 to 150 °C Electrical Characteristics Symbol ICES IEBO VCE(sat) VBE(sat) fT tOFF TC = 25°C unless otherwise noted Parameter Test Condition Max. Units 5 100 1 mA μA mA VBE = 6V, IC = 0 1 mA IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 1 1 1 V V V 1.2 1.2 1.5 V V V MHz 0.75 0.4 0.4 μs μs μs Collector Cut-off Current VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A Min. 10 Turn Off Time : BU406 : BU406H : BU408 © 2012 Fairchild Semiconductor Corporation BU406/406H/408 Rev. B0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A www.fairchildsemi.com 1 BU406/406H/408 — NPN Epitaxial Silicon Transistor April 2012 A 00m IB = 2 IB = 1000 mA 180 60mA IB = 1 A = 140m IB 4 VCE = 5V 0mA IB = 12 0mA IB = 10 mA = I B 80 IB = 60 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 mA mA I B = 40 2 IB = 20mA 1 0 0 1 2 3 4 5 6 7 8 9 100 10 1 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10000 1000 f = 1MHz IC = 10 IB Cob [pF], CAPACITANCE VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 100 VBE(sat) 1000 100 VCE(sat) 100 10 10 1 1 10 100 1000 10000 1 10 IC[mA], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 PC [W], POWER DISSIPATIOAN 10 IC Max. (Continuous) s s m 10 s 0m 10 ited m Li n io at 1m ip ss Di 1 VCE MAX. d ite im bL S/ IC[A], COLLECTOR CURRENT 70 IC Max. (Pulsed) 0.1 1 10 50 40 30 20 10 0 100 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2012 Fairchild Semiconductor Corporation BU406/406H/408 Rev. B0 60 Figure 6. Power Derating www.fairchildsemi.com 2 BU406/406H/408 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics BU406/406H/408 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation BU406/406H/408 Rev. 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