INFRARED EMITTING DIODES BL-L813XX-IR Features: 8.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system Infrared remote control units with high power requirement Smoke detector Infrared Camera Infrared applied system Electrical-optical characteristics: (Ta=25°C) (Test Condition: IF=50mA) m o c Chip Part Number Material λP (nm) BL-L813IRAC GaAs 940 BL-L813IRAB GaAs 940 BL-L813IRBC GaAlAs BL-L813IRBB BL-L813IRCC Lens Type ∆λ Ir (Vr=5V, uA) . x u l t e b Water Clear Forward Voltage(VF) Unit:V Radiant Power (mw/sr) Angle 2θ1/2(deg) Typ Max Typ 1.40 1.60 20 50 10 Blue Trans. 50 10 1.40 1.60 20 880 Water Clear 50 10 1.70 2.00 20 GaAlAs 880 Blue Trans. 50 10 1.70 2.00 20 GaAlAs 850 Water Clear 50 10 1.70 2.00 30 . w w w BL-L813IRCB GaAlAs 850 Blue Trans. 50 10 1.70 2.00 30 BL-L813IRCY GaAlAs 850 Yellow Trans. 50 10 1.70 2.00 30 Viewing 30 Absolute maximum ratings (Ta=25°C) Parameter Rating Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR -40 to +80 Storage Temperature TSTG -40 to +85 Lead Soldering Temperature TSOL Unit 50 150 5 mW 250 mA Max.260 5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] mA V INFRARED EMITTING DIODES BL-L813XX-IR Package configuration & Internal circuit diagram . w w . x u l t e b m o c w Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] INFRARED EMITTING DIODES BL-L813XX-IR Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 500 450 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 e b . w w 30 20 10 0 1.2 1.6 2.0 2.4 1 3.0 2.6 2.0 1.0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 1 5 4 2 3 60 80 0.2 -10 0 10 20 30 40 AMBIENT TEMPERATURE Ta( ) 50 60 30 20 1 6 2,4,8,A 3 5 10 0 100 20 40 60 80 100 AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE 300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE 4 3 2 -20 40 3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 0.5 0.1 -30 40 10 9 8 7 6 5 Ipeak MAX. IDC MAX. RELATIVE LUMINOUS INTENSITY 1 B FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT w 3 2 5 50 0 3.0 m o c . x lt u 4.0 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 4 3 2 70 1 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000