SPM FSBB20CH60L TM Smart Power Module Features General Description • UL Certified No.E209204(SPM27-CB package) It is an advanced smart power module (SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting lowpower inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. • Very low thermal resistance due to using DBC • 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Isolation rating of 2500Vrms/min. Applications • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives • Home appliances applications like air conditioner and washing machine. Top View Bottom View 44mm 26.8mm Figure 1. ©2007 Fairchild Semiconductor Corporation FSBB20CH60L Rev. C 1 www.fairchildsemi.com FSBB20CH60L Smart Power Module December 2007 FSBB20CH60L Smart Power Module Integrated Power Functions • 600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 10 and 11. • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View 13.7 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (7) CFOD (8) CSC (21) NU (22) NV 19.2 (23) NW (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (24) U Case Temperature (TC) Detecting Point (25) V (26) W DBC Substrate (27) P (20) VS(W) Figure 2. 2 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-side U Phase 4 IN(VL) Signal Input for Low-side V Phase 5 IN(WL) Signal Input for Low-side W Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Time Selection 8 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input 9 IN(UH) 10 VCC(UH) 11 VB(U) High-side Bias Voltage for U Phase IGBT Driving Signal Input for High-side U Phase High-side Bias Voltage for U Phase IC 12 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving 13 IN(VH) Signal Input for High-side V Phase 14 VCC(VH) 15 VB(V) High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving High-side Bias Voltage for V Phase IC 16 VS(V) 17 IN(WH) 18 VCC(WH) 19 VB(W) High-side Bias Voltage for W Phase IGBT Driving 20 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving 21 NU Negative DC–Link Input for U Phase 22 NV Negative DC–Link Input for V Phase 23 NW Negative DC–Link Input for W Phase 24 U Output for U Phase 25 V Output for V Phase 26 W Output for W Phase 27 P Positive DC–Link Input Signal Input for High-side W Phase High-side Bias Voltage for W Phase IC 3 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Internal Equivalent Circuit and Input/Output Pins P (27) (19) V B(W ) (18) V CC(W H) (17) IN (W H) VB VCC IN (20) V S(W ) (15) V B(V) (14) V CC(VH) (13) IN (VH) (10) V CC(UH) (9) IN (UH) (12) V S(U) (8) C SC (7) C FO D (6) V FO (5) IN (W L) (4) IN (VL) (3) IN (UL) VS W (26) VB VCC OUT COM IN (16) V S(V) (11) V B(U) OUT COM VS V (25) VB VCC OUT COM IN C(SC) VS U (24) OUT(W L) C(FOD) N W (23) VFO IN(W L) OUT(VL) IN(VL) N V (22) IN(UL) (2) CO M COM (1) V CC(L) VCC OUT(UL) V SL N U (21) Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT. Figure 3. 4 FSBB20CH60L Rev. C www.fairchildsemi.com Unless Otherwise Specified) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Rating Units Supply Voltage Applied between P- NU, NV, NW 450 V Supply Voltage (Surge) Applied between P- NU, NV, NW 500 V 600 V Collector-emitter Voltage ± IC Each IGBT Collector Current TC = 25°C 20 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 40 A PC Collector Dissipation TC = 25°C per One Chip TJ Operating Junction Temperature (Note 1) 61 W -20 ~ 125 °C Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) COM 20 V VBS High-side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3~17 V VFO Fault Output Supply Voltage Applied between VFO - COM IFO Fault Output Current Sink Current at VFO Pin VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V 5 mA -0.3~VCC+0.3 V Total System Symbol VPN(PROT) TC Parameter Conditions Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 2μs Module Case Operation Temperature -20°C≤ TJ ≤ 125°C, See Figure 2 TSTG Storage Temperature VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate Rating Units 400 V -20 ~ 100 °C -40 ~ 125 °C 2500 Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance Condition Min. Typ. Max. Units Inverter IGBT part (per 1/6 module) - - 1.63 °C/W Inverter FWD part (per 1/6 module) - - 2.55 °C/W Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. 5 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Typ. Max. Units Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V IC =20A, TJ = 25°C - - 2.3 V FWD Forward Voltage VIN = 0V IC = 20A, TJ = 25°C - - 2.1 V Switching Times VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) - 0.48 - μs - 0.30 - μs - 0.93 - μs - 0.52 - μs tC(ON) tOFF tC(OFF) - 0.10 - μs - 0.63 - μs - 0.30 - μs - 1.01 - μs tC(OFF) - 0.51 - μs trr - 0.10 - μs - - 250 μA trr LS Min. VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) tON tC(ON) tOFF ICES Collector-Emitter Leakage Current VCE = VCES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition 6 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCCL Parameter Quiescent VCC Supply Current IQCCH Conditions Min. Typ. Max. Units VCC = 15V IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA VCC = 15V IN(UH, VH, WH) = 0V VCC(UH), VCC(VH), VCC(WH) - COM - - 100 μA VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) - - 500 μA 4.5 - - V IQBS Quiescent VBS Supply Current VBS = 15V IN(UH, VH, WH) = 0V VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V UVCCD Supply Circuit UnderVoltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.2 V UVBSD Detection Level 10.1 11.3 12.5 V UVBSR Reset Level 10.5 11.7 12.9 V VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VFOL UVCCR tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage 3.0 - - V VIN(OFF) OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM - - 0.8 V Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Parameter Conditions Value Min. Typ. Max. Units VPN Supply Voltage Applied between P - NU, NV, NW - 300 400 V VCC Control Supply Voltage Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) - COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15 18.5 V -1 - 1 V/μs 2.5 - - μs - 20 kHz 4 V DVCC/Dt, Control supply variation DVBS/Dt tdead Blanking Time for Preventing For Each Input Signal Arm-short fPWM PWM Input Signal -20°C ≤ TC ≤ 100°C, -20°C ≤ TJ ≤ 125°C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including surge voltage) -4 7 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Parameter Mounting Torque Device Flatness Limits Conditions Mounting Screw: - M3 Units Min. Typ. Max. 0.51 0.62 0.72 N•m 0 - +120 μm - 15.00 - g Recommended 0.62N•m Note Figure 5 Weight (+) (+) Figure 5. Flatness Measurement Position 8 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Mechanical Characteristics and Ratings FSBB20CH60L Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 6. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Figure 7. Under-Voltage Protection (High-side) 9 FSBB20CH60L Rev. C www.fairchildsemi.com c6 Protection circuit state SET Internal IGBT Gate-Emitter Voltage FSBB20CH60L Smart Power Module Lower arms control input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 8. Short-Circuit Current Protection (Low-side Operation only) 10 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module 5V-Line R PF = SPM 4.7k Ω IN (UH) , IN (VH) , IN(W H) IN (UL) , IN (VL) , IN (W L) CPU 100 Ω 1nF VFO C PF = 1nF COM Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 9. Recommended CPU I/O Interface Circuit These Values depend on PW M Control Algorithm 15V-Line R E(H) R BS D BS One-Leg Diagram of SPM P 22uF 0.1uF Vcc VB IN HO COM VS Inverter O utput Vcc 1000uF 1uF IN OUT COM VSL N Note: 1. It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics. 2. The bootstrap resistor (RBS) should be 3 times greater than RE(H). The recommended value of RE(H) is 5.6Ω, but it can be increased up to 20Ω (maximum) for a slower dv/dt of high-side. 3. The ceramic capacitor placed between VCC-COM should be over 1μF and mounted as close to the pins of the SPM as possible. Figure 10. Recommended Bootstrap Operation Circuit and Parameters 11 FSBB20CH60L Rev. C www.fairchildsemi.com RE(VH) 15V line RE(UH) RBS DBS (19) VB(W) (18) VCC(WH) CBS Gating WH CBSC (17) IN(WH) (20) VS(W) RBS DBS (15) VB(V) (14) VCC(VH) CBS Gating VH CBSC (13) IN(VH) (16) VS(V) C P U RBS DBS (11) VB(U) (10) VCC(UH) CBS Gating UH CBSC (9) IN(UH) (12) VS(U) P (27) VB VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) M VB VCC CDCS OUT COM IN Vdc U (24) VS RF 5V line (8) CSC CSC RS RPF (7) CFOD CFOD Fault (6) VFO (5) IN(WL) Gating WL (4) IN(VL) Gating VL (3) IN(UL) Gating UL C(SC) OUT(WL) C(FOD) NW (23) RSW VFO IN(WL) OUT(VL) IN(VL) NV (22) RSV IN(UL) (2) COM CBPF COM CPF (1) VCC(L) CSP15 OUT(UL) VCC VSL NU (21) RSU CSPC15 Input Signal for ShortCircuit Protection RFW W-Phase Current V-Phase Current U-Phase Current RFV RFU CFW CFV CFU Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9. 4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2 μs. 9. Each capacitor should be mounted as close to the pins of the SPM as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22 μF between the P&GND pins is recommended. 11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12. CSPC15 should be over 1uF and mounted as close to the pins of the SPM as possible. Figure 11. Typical Application Circuit 12 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module RE(WH) FSBB20CH60L Smart Power Module Detailed Package Outline Drawings 13 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Detailed Package Outline Drawings (Continued) 14 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module Detailed Package Outline Drawings (Continued) 15 FSBB20CH60L Rev. C www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 16 FSBB20CH60L Rev. C www.fairchildsemi.com FSBB20CH60L Smart Power Module TRADEMARKS