MCC
TM
Micro Commercial Components
TIP100
TIP101
TIP102
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
•
•
•
•
•
x
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
NPN Plastic
Medium-Power
Silicon Transistors
High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
ICP
IB
PD
TJ,
TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Rating
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
Emitter-Base Voltage
Collector Current-continuous
Collector Current-peak
Base Current
Collector Dissipation @TC=25OC
O
Derate above 25 C
Junction Temperature
Storage Temperature
Unit
60
80
100
Parameter
C
B
S
F
60
80
100
5.0
8.0
15
1.0
80
0.64
-55 to +150
-55 to +150
V
Q
V
A
A
A
W
O
W/ C
O
C
O
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
TO-220
V
Min
Max
60
80
100
-------
-------
50
50
50
-------
50
50
50
---
8.0
T
A
U
1 2
3
H
K
Units
OFF CHARACTERISTICS
VCEO(SUS)
ICEO
ICBO
IEBO
Collector-Emitter Sustaining Voltage
(IC=30mAdc, IB=0)
TIP100
TIP101
TIP101
Collector Cut-off Current
(VCE=30Vdc, IB=0)
TIP100
(VCE=40Vdc, IB=0)
TIP101
TIP102
(VCE=50Vdc, IB=0)
Collector Cut-off Current
TIP100
(VCB=60Vdc, IE=0)
(VCB=80Vdc, IE=0)
TIP101
TIP102
(VCB=100Vdc, IE=0)
Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
V
L
J
D
Vdc
R
G
N
uAdc
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
uAdc
ON CHARACTERISTICS(1)
hFE(1)
DIM
A
B
C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
D
F
G
H
J
K
L
N
.020
.139
.190
--.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.53
2.29
--0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
----.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
----1.15
3.43
2.92
1.39
6.86
1.27
-----
mAdc
DC Current Gain
1000
20000
(IC=3.0Adc, VCE=4.0Vdc)
---200
--(IC=8.0Adc, VCE=4.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
--2.0
(IC=3.0Adc, IB=6.0mAdc)
--2.5
Vdc
(IC=8.0Adc, IB=80mAdc)
VBE(ON)
Base-Emitter On Voltage
(IC=8.0Adc,VCE=4.0Adc)
--2.8
Vdc
hfe
Small-Signal Current Gain
(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)
4.0
----Cob
Output Capacitance
--200
pF
(VCB=10V, IE=0, f=0.1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
NOTE
∅
www.mccsemi.com
Revision: 3
1 of 4
2008/01/01
MCC
TIP100,101,102
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Micro Commercial Components
5.0
ts
3.0
2.0
3.0 60
tf
1.0
t, TIME ( µs)
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
TC
2.0 40
0.7
0.5
0.3
0.2
1.0 20
TA
0
0.1
0.07
0.05
0.1
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
160
140
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td @ VBE(off) = 0 V
5.0 7.0
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
10
Figure 2. Switching Times
Figure 1. Power Derating
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TM
0.1
0.1
0.07
0.05
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) – TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500
1.0 k
Figure 3. Thermal Response
20
IC, COLLECTOR CURRENT (mA)
10
5 ms
5.0
100 µs
2.0
1 ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
1.0
0.5
0.2
0.1
TIP100
TIP101
TIP102
0.05
0.02
1.0
10
2.0
5.0
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 4. Active–Region Safe Operating Area
www.mccsemi.com
Revision: 3
2 of 4
2008/01/01
MCC
TIP100,101,102
TM
Micro Commercial Components
300
5000
3000
2000
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
TJ = 25°C
200
C, CAPACITANCE (pF)
h fe , SMALL–SIGNAL CURRENT GAIN
10,000
1000
500
300
200
100
50
30
20
10
1.0
Cob
100
Cib
70
50
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
30
0.1
500 1000
200
0.2
0.5 1.0
2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
20,000
VCE = 4.0 V
hFE , DC CURRENT GAIN
10,000
5000
TJ = 150°C
25°C
3000
2000
– 55°C
1000
500
300
200
0.1
0.2
100
Figure 6. Capacitance
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Small–Signal Current Gain
50
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
10
3.0
TJ = 25°C
2.6
2.2
IC = 2.0 A
4.0 A
6.0 A
1.8
1.4
1.0
0.3
0.5 0.7 1.0
Figure 7. DC Current Gain
2.0
5.0
IB, BASE CURRENT (mA)
10
20
30
Figure 8. Collector Saturation Region
3.0
TJ = 25°C
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
www.mccsemi.com
Revision: 3
3 of 4
2008/01/01
MCC
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-BP
Bulk;1Kpcs/Box
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
Revision: 3
4 of 4
2008/01/01