TF202FC Ordering number : ENA1343 SANYO Semiconductors DATA SHEET TF202FC N-channel Silicon Juncton FET Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Symbol Conditions Ratings VGDO IG Allowable Power Dissipation ID PD Junction Temperature Tj Storage Temperature Tstg Unit --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) Conditions Ratings min IG=--100μA --20 VDS=5V, ID=1μA --0.2 Marking : E typ max Unit V --0.6 --1.0 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2208GB MS IM TC-00001090 No.A1343-1/3 TF202FC Continued from preceding page. Parameter Symbol Drain Current IDSS Forward Transfer Admittance | yfs | Ratings Conditions min typ 140* VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz Unit max 350* 0.5 1.0 μA mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] 3.5 pF Reverse Transfer Capacitance Crss 0.65 pF Voltage Gain GV VIN=10mV, f=1kHz --3.0 Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=4.5V → 1.5V --1.2 Frequency Characteristic ΔGvf f=1kHz to 110Hz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A Curve dB --3.5 dB --1.0 dB --110 dB 1.2 % * : The TF202FC is classified by IDSS as follows : (unit : μA) Rank 4 5 IDSS 140 to 240 210 to 350 Package Dimensions Test Circuit unit : mm (typ) 7029-004 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic Top View 0.3 1.4 1kΩ VCC=1.5V 3 33μF + 15pF 0.8 1.4 VCC=4.5V 0.25 2 1 0.1 0.3 0.2 VTVM V THD OSC 0.6 0.45 0.07 Output Impedance 1 : Drain 2 : Source 3 : Gate 0.07 2 1 3 SANYO : SSFP Bot t om View VNO -- IDSS VNO : VCC=4.5V VIN=0, ACurve RL=1.0kΩ IDSS : VDS=5.0V --112 --114 --116 --118 --120 7 100 2 3 THD -- VIN 3 5 Drain Current, IDSS -- μA 7 Total Harmonic Distortion, THD -- % Output Noise Voltage, VNO -- dB --110 B A 10 7 μA 50μA 40 2 μA 400 =1 SS 5 ID 3 2 1.0 7 5 1000 IT05920 THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 2 0 40 80 120 160 Input Voltage, VIN -- mV 200 240 ITR02649 No.A1343-2/3 TF202FC PD -- Ta Allowable Power Dissipation, PD -- mW 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR02650 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No.A1343-3/3