SEMTECH RCLAMP3304N

RClamp2504N & RClamp3304N
RailClamp
2.5V & 3.3V TVS Arrays
PROTECTION PRODUCTS - RailClamp
Description
Features
A RailClamp is a low capacitance TVS array designed
to protect high speed data interfaces. This series has
been specifically designed to protect sensitive components which are connected to data and transmission
lines from overvoltage caused by ESD (electrostatic
discharge), CDE (Cable Discharge Events), and Lightning.
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. During transient conditions, the
steering diodes direct the transient current to ground.
The internal TVS diode clamps the transient voltage to
a safe level. The low capacitance array configuration
allows the user to protect up to four high-speed data
lines.
The RClampTM3304N and RClampTM2504N are constructed using Semtech’s proprietary EPD process
technology. The EPD process provides low stand-off
voltages with significant reductions in leakage current
and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5
volts and 3.3 volts for superior protection.
These devices are in a 10-pin, RoHS/WEEE compliant,
SLP2626P10 package. It measures 2.6 x 2.6 x
0.60mm. The leads are spaced at a pitch of 0.5mm
and are finished with lead-free NiPdAu. The high surge
capability (Ipp=25A, tp=8/20µs) means it can be used
in high threat environments in applications such as
Gigabit Ethernet, telecommunication lines, and digital
video.

‹ Transient protection for high-speed data lines to
‹
‹
‹
‹
‹
‹
‹
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 25A (8/20µs)
Array of surge rated diodes with internal TVS Diode
Small package saves board space
Protects up to four I/O lines
Low capacitance (<5pF) for high-speed interfaces
Low leakage current and clamping voltage
Low operating voltage: 2.5V and 3.3V
Solid-state silicon-avalanche technology
Mechanical Characteristics
‹
‹
‹
‹
‹
‹
‹
SLP2626P10 10L package
RoHS/WEEE Compliant
Nominal Dimensions: 2.6 x 2.6 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking Code + Date Code
Packaging : Tape and Reel
Applications
‹
‹
‹
‹
‹
‹
Circuit Diagram
USB 2.0
10/100/1000 Ethernet
Digital Visual Interface (DVI)
T1/E1 Secondary Protection
T3/E3 Secondary Protection
Analog Video
Package Configuration
2.60
1 2
CL
Pin 5
CL 2.60
Pin 1
Pin 9
Pin 3
Pin 7
0.50 BSC
Gnd
0.60
Revision 01/15/2008
1
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20µs)
Pp k
450
Watts
Peak Pulse Current (tp = 8/20µs)
IP P
25
A
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
VESD
25
15
kV
TJ
-55 to +125
°C
TSTG
-55 to +150
°C
Op erating Temp erature
Storage Temp erature
Electrical Characteristics (T=25oC)
R Clamp2504N
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
2.5
V
Punch-Through Voltage
V PT
IPT = 2µA
2.7
V
Snap -Back Voltage
VSB
ISB = 50mA
2.0
V
Reverse Leakage Current
IR
VRWM = 2.5V, T=25°C
0.5
µA
Clamp ing Voltage
VC
IPP = 1A, tp = 8/20µs
4.5
V
Clamp ing Voltage
VC
IPP = 10A, tp = 8/20µs
7.5
V
Clamp ing Voltage
VC
IPP = 25A, tp = 8/20µs
15
V
Junction Cap acitance
Cj
Between I/O p ins and Ground
VR = 0V, f = 1MHz
3.8
5
pF
Between I/O p ins
VR = 0V, f = 1MHz
2.0
pF
Note 1: I/O pins are pin 1, 3, 7, and 9
 2008 Semtech Corp.
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
R Clamp3304N
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
3.3
V
Punch-Through Voltage
V PT
IPT = 5µA
3.5
V
Snap -Back Voltage
VSB
ISB = 50mA
2.8
V
Reverse Leakage Current
IR
VRWM = 3.3V, T=25°C
5
µA
Clamp ing Voltage
VC
IPP = 1A, tp = 8/20µs
5.5
V
Clamp ing Voltage
VC
IPP = 10A, tp = 8/20µs
10.5
V
Clamp ing Voltage
VC
IPP = 25A, tp = 8/20µs
18
V
Junction Cap acitance
Cj
Between I/O p ins and Ground
VR = 0V, f = 1MHz
3.8
5
pF
Between I/O p ins
VR = 0V, f = 1MHz
2.0
 2008 Semtech Corp.
3
pF
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
10
110
90
% of Rated Power or IPP
Peak Pulse Power - PPP (kW)
100
1
0.1
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
0
1000
25
50
Pulse Duration - tp (us)
Pulse Waveform
90
1.3
1.2
1.1
-t
50
40
td = IPP/2
30
1
0.9
0.8
0.7
0.6
0.5
0.4
20
0.3
10
0.2
f = 1 MHz
0.1
0
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
Reverse Voltage - VR (V)
Time (µs)
Clamping Voltage vs. Peak Pulse Current
I/O to GND
Clamping Voltage vs. Peak Pulse Current
I/O to I/O
25
15
Clamping Voltage - VC (V)
20
Clamping Voltage - VC (V)
150
1.4
CJ(VR) / CJ(VR=0)
Percent of I
PP
80
e
125
1.5
Waveform
Parameters:
tr = 8µs
td = 20µs
100
60
100
Normalized Junction Capacitance
vs. Reverse Voltage
110
70
75
Ambient Temperature - TA (oC)
RClamp3304N
10
RClamp2504N
5
Waveform
Parameters:
tr = 8µs
td = 20µs
0
20
RClamp3304N
15
10
RClamp2504N
Waveform
Parameters:
tr = 8µs
td = 20µs
5
0
0
5
10
15
20
25
0
Peak Pulse Current - IPP (A)
 2008 Semtech Corp.
5
10
15
20
25
Peak Pulse Current - IPP (A)
4
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Typical Characteristics
Insertion Loss S21 (I/O to Ground)
CH1 S21
LOG
ESD Clamping
(8kV Contact per IEC 61000-4-2)
6 dB / REF 0 dB
1: -1.0230 dB
800 MHz
2: -1.1051 dB
900 MHz
0 dB
12
-6 dB
-12 dB
3
4
3: -2.0922 dB
1.8 GHz
4: -3.0779 dB
2.5 GHz
-18 dB
5: -4.5358 dB
2.7 GHz
-24 dB
-30 dB
-36 dB
-42 dB
-48 dB
1
MHz
START.
MHz
10
MHz
100
MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
Note: Data is taken with a 10x attenuator
 2008 Semtech Corp.
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information
Circuit Diagram
Device Connection Options for Protection of Four
High-Speed Data Lines
Pin 5
These devices are designed to protect low voltage data
lines operating at 2.5 volts or 3.3 volts. When the
voltage on the protected line exceeds the reference
voltage the steering diodes are forward biased,
conducting the transient current away from the
sensitive circuitry.
Data lines are connected at pins 1, 3, 7 and 9. The
center pin should be connected directly to a ground
plane. The path length is kept as short as possible to
minimize parasitic inductance. Pins 2, 4, 6, 8, and 10
are not connected.
Pin 1
Pin 3
Pin 7
Gnd
Figure 1
iguration (T
op Side Vie
w)
1.. Pin Conf
Configuration
(Top
View)
Note that pin 5 is connected internally to the cathode
of the low voltage TVS. It is not recommended that
these pins be directly connected to a DC source
greater than the snap-back votlage (VSB) as the device
can latch on as described below.
1
2
EPD TVS Characteristics
3
4
5
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD technology, the RClamp2504N and RClamp3304N can
effectively operate at 2.5V and 3.3V respectively while
maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (VRWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(VPT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
GND
10
9
8
7
6
Pin
Identification
1, 3, 7, 9
Input/Output Lines
2, 4, 6, 8, 10
N o Connect
5
N o Connect
(Do not connect this pin to a DC supply)
Center Tab
Ground
defined on the curve by the snap-back voltage (VSB)
and snap-back current (ISB). To return to a nonconducting state, the current through the device must
fall below the ISB (approximately <50mA) and the
voltage must fall below the VSB (normally 2.8 volts for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
characteristics due to its structure. This point is
 2008 Semtech Corp.
Pin 9
6
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information
RClamp2504N
1 2
RClamp2504N
Gigabit
Ethernet
Transceiver
1 2
RClamp2504N
1 2
RClamp2504N
1 2
Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection
(PHY Operating Temp <= 90°C)
1
10
2
9
3
8
4
7
5
6
RClamp2504N
1
10
2
9
3
8
4
7
5
6
RClamp2504N
Schematic Diagram for Gigabit Ethernet ESD Protection
 2008 Semtech Corp.
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information - Spice Model
RClamp2504N Spice Model
R Clamp2504N Spice Parameters
 2008 Semtech Corp.
Parameter
Unit
D1 (LCR D)
D2 (LCR D)
D3 (T VS)
IS
Amp
1E-20
1E-20
1.66E-13
BV
Volt
100
100
2.89
VJ
Volt
0.63
0.59
0.53
RS
Ohm
0.138
0.241
0.06
IB V
Amp
1E-3
1E-3
1E-3
CJO
Farad
1.5E-12
1.5E-12
288E-12
TT
sec
2.541E-9
2.541E-9
2.541E-9
M
--
0.01
0.01
0.17
N
--
1.1
1.1
1.1
EG
eV
1.11
1.11
1.11
8
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Applications Information - Spice Model
RClamp3304N Spice Model
R Clamp3304N Spice Parameters
 2008 Semtech Corp.
Parameter
Unit
D1 (LCR D)
D2 (LCR D)
D3 (T VS)
IS
Amp
1E-20
1E-20
1.66E-13
BV
Volt
100
100
3.55
VJ
Volt
0.62
0.59
0.6
RS
Ohm
0.138
0.241
0.182
IB V
Amp
1E-3
1E-3
1E-3
CJO
Farad
1.5E-12
1.5E-12
253E-12
TT
sec
2.541E-9
2.541E-9
2.541E-9
M
--
0.01
0.01
0.205
N
--
1.1
1.1
1.1
EG
eV
1.11
1.11
1.11
9
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Outline Drawing - SLP2626P10
A
B
D
DIM
PIN 1
INDICATOR
(LASER MARK)
E
A
SEATING
PLANE
aaa C
A2
C
A1
D1
A
A1
A2
b
D
D1
E
E1
e
L
N
aaa
bbb
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
.020 .024 .026 0.50 0.60 0.65
.000 .001 .002 0.00 0.03 0.05
(.007)
(0.17)
.007 .010 .012 0.20 0.25 0.30
.098 .102 .106 2.50 2.60 2.70
.079 .085 .089 2.00 2.15 2.25
.098 .102 .106 2.50 2.60 2.70
.044 .050 .054 1.11 1.26 1.36
.020 BSC
0.50 BSC
.011 .014 .016 0.30 0.35 0.40
10
10
.003
0.08
.004
0.10
C
1 2 L
E/2
CL
E1
LxN
e
N
bxN
D/2
bbb
C A B
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
Land Pattern - SLP2626P10
X
P
Z
F
G
(C)
DIM
B
C
F
G
P
X
Y
Z
DIMENSIONS
INCHES
MILLIMETERS
.081
2.05
.100
2.50
.050
1.26
.073
1.85
.020
0.50
.012
0.30
.025
0.65
.124
3.15
Y
B
NOTES:
1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
 2008 Semtech Corp.
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RClamp2504N & RClamp3304N
PROTECTION PRODUCTS
Marking
Ordering Information
2504N
3304N
YYWW
YYWW
RClamp2504N
Part Number
Working
Voltage
Qty per
Reel
R eel Size
RClamp2504N .TCT
2.5 Volts
3,000
7 Inch
RClamp3304N .TCT
3.3 Volts
3,000
7 Inch
RClamp3304N
RailClamp and RClamp are marks of Semtech Corporation
YYWW = Date Code
Tape and Reel Specification
Pin 1 Location
User Direction of feed
Device Orientation in Tape
A0
2.77 +/-0.05 mm
B0
K0
2.77 +/-0.05 mm
Tape
Width
B, (Max)
D
8 mm
4.2 mm
(.165)
1.5 + 0.1 mm
- 0.0 mm
0.80 +/-0.05 mm
D1
E
1.0 mm
±0.05
1.750±.10
mm
F
K
(MAX)
P
P0
P2
T(MAX)
3.5±0.05
mm
2.4 mm
4.0±0.1
mm
4.0±0.1
mm
2.0±0.05
mm
0.4 mm
W
8.0 mm
+ 0.3 mm
- 0.1 mm
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
 2008 Semtech Corp.
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