RClamp2504N & RClamp3304N RailClamp 2.5V & 3.3V TVS Arrays PROTECTION PRODUCTS - RailClamp Description Features A RailClamp is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and Lightning. The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground. The internal TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration allows the user to protect up to four high-speed data lines. The RClampTM3304N and RClampTM2504N are constructed using Semtech’s proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5 volts and 3.3 volts for superior protection. These devices are in a 10-pin, RoHS/WEEE compliant, SLP2626P10 package. It measures 2.6 x 2.6 x 0.60mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. The high surge capability (Ipp=25A, tp=8/20µs) means it can be used in high threat environments in applications such as Gigabit Ethernet, telecommunication lines, and digital video. Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 25A (8/20µs) Array of surge rated diodes with internal TVS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<5pF) for high-speed interfaces Low leakage current and clamping voltage Low operating voltage: 2.5V and 3.3V Solid-state silicon-avalanche technology Mechanical Characteristics SLP2626P10 10L package RoHS/WEEE Compliant Nominal Dimensions: 2.6 x 2.6 x 0.60 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking Code + Date Code Packaging : Tape and Reel Applications Circuit Diagram USB 2.0 10/100/1000 Ethernet Digital Visual Interface (DVI) T1/E1 Secondary Protection T3/E3 Secondary Protection Analog Video Package Configuration 2.60 1 2 CL Pin 5 CL 2.60 Pin 1 Pin 9 Pin 3 Pin 7 0.50 BSC Gnd 0.60 Revision 01/15/2008 1 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20µs) Pp k 450 Watts Peak Pulse Current (tp = 8/20µs) IP P 25 A ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) VESD 25 15 kV TJ -55 to +125 °C TSTG -55 to +150 °C Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) R Clamp2504N Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Maximum Units 2.5 V Punch-Through Voltage V PT IPT = 2µA 2.7 V Snap -Back Voltage VSB ISB = 50mA 2.0 V Reverse Leakage Current IR VRWM = 2.5V, T=25°C 0.5 µA Clamp ing Voltage VC IPP = 1A, tp = 8/20µs 4.5 V Clamp ing Voltage VC IPP = 10A, tp = 8/20µs 7.5 V Clamp ing Voltage VC IPP = 25A, tp = 8/20µs 15 V Junction Cap acitance Cj Between I/O p ins and Ground VR = 0V, f = 1MHz 3.8 5 pF Between I/O p ins VR = 0V, f = 1MHz 2.0 pF Note 1: I/O pins are pin 1, 3, 7, and 9 2008 Semtech Corp. 2 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS R Clamp3304N Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Maximum Units 3.3 V Punch-Through Voltage V PT IPT = 5µA 3.5 V Snap -Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 3.3V, T=25°C 5 µA Clamp ing Voltage VC IPP = 1A, tp = 8/20µs 5.5 V Clamp ing Voltage VC IPP = 10A, tp = 8/20µs 10.5 V Clamp ing Voltage VC IPP = 25A, tp = 8/20µs 18 V Junction Cap acitance Cj Between I/O p ins and Ground VR = 0V, f = 1MHz 3.8 5 pF Between I/O p ins VR = 0V, f = 1MHz 2.0 2008 Semtech Corp. 3 pF www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 90 % of Rated Power or IPP Peak Pulse Power - PPP (kW) 100 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 50 Pulse Duration - tp (us) Pulse Waveform 90 1.3 1.2 1.1 -t 50 40 td = IPP/2 30 1 0.9 0.8 0.7 0.6 0.5 0.4 20 0.3 10 0.2 f = 1 MHz 0.1 0 0 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) Time (µs) Clamping Voltage vs. Peak Pulse Current I/O to GND Clamping Voltage vs. Peak Pulse Current I/O to I/O 25 15 Clamping Voltage - VC (V) 20 Clamping Voltage - VC (V) 150 1.4 CJ(VR) / CJ(VR=0) Percent of I PP 80 e 125 1.5 Waveform Parameters: tr = 8µs td = 20µs 100 60 100 Normalized Junction Capacitance vs. Reverse Voltage 110 70 75 Ambient Temperature - TA (oC) RClamp3304N 10 RClamp2504N 5 Waveform Parameters: tr = 8µs td = 20µs 0 20 RClamp3304N 15 10 RClamp2504N Waveform Parameters: tr = 8µs td = 20µs 5 0 0 5 10 15 20 25 0 Peak Pulse Current - IPP (A) 2008 Semtech Corp. 5 10 15 20 25 Peak Pulse Current - IPP (A) 4 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Typical Characteristics Insertion Loss S21 (I/O to Ground) CH1 S21 LOG ESD Clamping (8kV Contact per IEC 61000-4-2) 6 dB / REF 0 dB 1: -1.0230 dB 800 MHz 2: -1.1051 dB 900 MHz 0 dB 12 -6 dB -12 dB 3 4 3: -2.0922 dB 1.8 GHz 4: -3.0779 dB 2.5 GHz -18 dB 5: -4.5358 dB 2.7 GHz -24 dB -30 dB -36 dB -42 dB -48 dB 1 MHz START. MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz Note: Data is taken with a 10x attenuator 2008 Semtech Corp. 5 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information Circuit Diagram Device Connection Options for Protection of Four High-Speed Data Lines Pin 5 These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the reference voltage the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 1, 3, 7 and 9. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. Pins 2, 4, 6, 8, and 10 are not connected. Pin 1 Pin 3 Pin 7 Gnd Figure 1 iguration (T op Side Vie w) 1.. Pin Conf Configuration (Top View) Note that pin 5 is connected internally to the cathode of the low voltage TVS. It is not recommended that these pins be directly connected to a DC source greater than the snap-back votlage (VSB) as the device can latch on as described below. 1 2 EPD TVS Characteristics 3 4 5 These devices are constructed using Semtech’s proprietary EPD technology. By utilizing the EPD technology, the RClamp2504N and RClamp3304N can effectively operate at 2.5V and 3.3V respectively while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. GND 10 9 8 7 6 Pin Identification 1, 3, 7, 9 Input/Output Lines 2, 4, 6, 8, 10 N o Connect 5 N o Connect (Do not connect this pin to a DC supply) Center Tab Ground defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a nonconducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structure. This point is 2008 Semtech Corp. Pin 9 6 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information RClamp2504N 1 2 RClamp2504N Gigabit Ethernet Transceiver 1 2 RClamp2504N 1 2 RClamp2504N 1 2 Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection (PHY Operating Temp <= 90°C) 1 10 2 9 3 8 4 7 5 6 RClamp2504N 1 10 2 9 3 8 4 7 5 6 RClamp2504N Schematic Diagram for Gigabit Ethernet ESD Protection 2008 Semtech Corp. 7 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information - Spice Model RClamp2504N Spice Model R Clamp2504N Spice Parameters 2008 Semtech Corp. Parameter Unit D1 (LCR D) D2 (LCR D) D3 (T VS) IS Amp 1E-20 1E-20 1.66E-13 BV Volt 100 100 2.89 VJ Volt 0.63 0.59 0.53 RS Ohm 0.138 0.241 0.06 IB V Amp 1E-3 1E-3 1E-3 CJO Farad 1.5E-12 1.5E-12 288E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.17 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 8 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Applications Information - Spice Model RClamp3304N Spice Model R Clamp3304N Spice Parameters 2008 Semtech Corp. Parameter Unit D1 (LCR D) D2 (LCR D) D3 (T VS) IS Amp 1E-20 1E-20 1.66E-13 BV Volt 100 100 3.55 VJ Volt 0.62 0.59 0.6 RS Ohm 0.138 0.241 0.182 IB V Amp 1E-3 1E-3 1E-3 CJO Farad 1.5E-12 1.5E-12 253E-12 TT sec 2.541E-9 2.541E-9 2.541E-9 M -- 0.01 0.01 0.205 N -- 1.1 1.1 1.1 EG eV 1.11 1.11 1.11 9 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Outline Drawing - SLP2626P10 A B D DIM PIN 1 INDICATOR (LASER MARK) E A SEATING PLANE aaa C A2 C A1 D1 A A1 A2 b D D1 E E1 e L N aaa bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .020 .024 .026 0.50 0.60 0.65 .000 .001 .002 0.00 0.03 0.05 (.007) (0.17) .007 .010 .012 0.20 0.25 0.30 .098 .102 .106 2.50 2.60 2.70 .079 .085 .089 2.00 2.15 2.25 .098 .102 .106 2.50 2.60 2.70 .044 .050 .054 1.11 1.26 1.36 .020 BSC 0.50 BSC .011 .014 .016 0.30 0.35 0.40 10 10 .003 0.08 .004 0.10 C 1 2 L E/2 CL E1 LxN e N bxN D/2 bbb C A B NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP2626P10 X P Z F G (C) DIM B C F G P X Y Z DIMENSIONS INCHES MILLIMETERS .081 2.05 .100 2.50 .050 1.26 .073 1.85 .020 0.50 .012 0.30 .025 0.65 .124 3.15 Y B NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2008 Semtech Corp. 10 www.semtech.com RClamp2504N & RClamp3304N PROTECTION PRODUCTS Marking Ordering Information 2504N 3304N YYWW YYWW RClamp2504N Part Number Working Voltage Qty per Reel R eel Size RClamp2504N .TCT 2.5 Volts 3,000 7 Inch RClamp3304N .TCT 3.3 Volts 3,000 7 Inch RClamp3304N RailClamp and RClamp are marks of Semtech Corporation YYWW = Date Code Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 2.77 +/-0.05 mm B0 K0 2.77 +/-0.05 mm Tape Width B, (Max) D 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm 0.80 +/-0.05 mm D1 E 1.0 mm ±0.05 1.750±.10 mm F K (MAX) P P0 P2 T(MAX) 3.5±0.05 mm 2.4 mm 4.0±0.1 mm 4.0±0.1 mm 2.0±0.05 mm 0.4 mm W 8.0 mm + 0.3 mm - 0.1 mm Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2008 Semtech Corp. 11 www.semtech.com