BD241A BD241C NPN power transistors Features ■ . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging BD241A BD241C BD241A BD241C TO-220 TO-220 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 BD241A BD241C Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Unit BD241A BD241C VCER Collector-emitter voltage (RBE = 100Ω) 70 115 V VCEO Collector-emitter voltage (IB = 0) 60 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 3 A Collector peak current (tp < ms) 5 A Base current 1 A PTOT Total dissipation at Tcase = 25°C 40 W Tstg Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ 2/9 Parameter Max. operating junction temperature BD241A BD241C 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 3. Electrical characteristics Symbol ICES ICEO IEBO Parameter Max. Unit VCE = rated VCEO 0.2 mA Collector cut-off current for BD241A VCE =30V 0.3 mA (IB = 0) for BD241C VCE =60V 0.3 mA Emitter cut-off current (IC = 0) VEB =5V 1 mA Collector cut-off current (V BE = 0) Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) Test Conditions Min. Typ. IC =30mA for BD241A for BD241C 60 100 V V Collector-emitter saturation voltage IC =3A _ IB =0.6A 1.2 V VBE(1) Base-emitter voltage IC =3A VCE =4V 1.8 V hFE(1) DC current gain IC =1A VCE =4V 25 IC =3A VCE =4V 10 VCE(sat)(1) 1. Pulsed duration = 300 ms, duty cycle ≥1.5%. 2.1 Electrical characteristic (curves) Figure 2. Safe operating area Figure 3. Derating curve 3/9 Electrical characteristics 4/9 BD241A BD241C Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage Figure 8. Base-emitter on voltage Figure 9. Resistive load switching time BD241A BD241C Electrical characteristics Figure 10. Resistive load switching time 2.2 Test circuits Figure 11. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/9 Package mechanical data 3 BD241A BD241C Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 BD241A BD241C Package mechanical data TO-220 Mechanical data DIM. mm. MIN. TYP MAX. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 D 15.25 15.75 D1 1.27 E 10 e 2.40 10.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 7/9 Revision history BD241A BD241C 4 Revision history Table 4. 8/9 Revision history Date Revision Changes 01-Dec-2000 1 Initial Release 10-Jul-2007 2 Figure 2 and figure 3, have been added. BD241A BD241C Please Read Carefully: Information in this document is provided solely in connection with ST products. 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