TC1267 400mA PCI LDO Features General Description • • • • • • • • The TC1267 is an application-specific, low dropout regulator (LDO), specifically intended for use in PCI peripheral card applications complying with PCI Power Management (PCI 2.0). It provides an uninterrupted, 3.3V output voltage when the main (5V) or auxiliary (3.3V) input voltage supplies are present. Glitch Free Transition Between Input Sources Automatic Input Source Selection External PMOS Bypass Switch Control Built-in 5V Detector 1% Regulated Output Voltage Accuracy 400mA Load Current Capability Kelvin Sense Input Low Ground Current, Independent of Load Applications • • • • • PCMCIA PCI Network Interface Cards (NICs) CardbusTM Technology Desktop Computers Device Selection Table Part Number Package Junction Temp. Range TC1267VET 5-Pin DDPAK -5°C to +95°C Pin Configuration The TC1267 consists of an LDO, a voltage threshold detector, external switchover logic and gate drive circuitry. It functions as a conventional LDO as long as the voltage on the main supply input (VIN) is above the lower threshold (3.90V typical). Should the voltage on VIN fall below the lower threshold, the LDO is disabled and an external P-channel MOSFET is automatically turned on, connecting the auxiliary supply input to VOUT, and ensuring an uninterrupted 3.3V output. The main supply is automatically selected, if both the main and auxiliary input supplies are present, and transition from one input supply to the other is ensured glitchfree. High integration, automatic secondary supply switchover, Kelvin sensing, and small size make the TC1267 the optimum LDO for PCI 2.0 applications. Functional Block Diagram VIN VAUX 5-Pin DDPAK Tab is GND Detect DR Bandgap Reference TC1267 – E/A + VOUT GND VAUX VIN GND VOUT DR 1 2 3 4 5 2001-2012 Microchip Technology Inc. DS21378C-page 1 TC1267 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Supply Voltage (VIN).............. -0.5V to +7V (Max) Auxiliary Supply Voltage (VAUX) ..... -0.5V to +7V (Max) LDO Output Current (IOUT)................................400mA Thermal Impedance, Junction-to-Ambient (JA).......... 27°C/W for DDPAK ESD Rating .......................................................... 2 KV Operating Temperature Range (TA)........-5°C to +70°C Storage Temperature Range (TSTG) ...-65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1267 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7F, unless otherwise noted. Boldface type specifications apply over full operating range. Symbol Parameter Min Typ Max Units Test Conditions VIN Supply Voltage 4.4 5.0 5.5 V VAUX = 0V IGND Ground Current — — 230 260 450 500 A VAUX = 0V (Note 6) VAUX = 3.3V (Note 6) IVIN Reverse Leakage from VAUX — -0.1 -1.0 A VAUX = 3.5V, VIN = 0V, IOUT = 0mA VAUX Supply Voltage 3.0 3.3 3.6 V IQ(AUX) Quiescent Current — — 50 — 70 100 A VIN = 0V, IOUT = 0mA — — 60 — 80 120 A VIN = 5V, IOUT = 0mA IVAUX Reverse Leakage from VIN — -0.1 -1.0 A VIN = 5.5V, VAUX = 0V, IOUT = 0mA VTH(LO) 5V Detector Low Threshold Voltage — 3.75 3.90 — — 4.05 V VIN Falling (Notes 2, 3) VHYST 5V Detector Hysteresis Voltage — 200 260 — — 300 mV VTH(HI) 5V Detector High Threshold Voltage — 4.0 4.15 — — 4.30 V VIN Rising (Notes 2, 3) VOUT LDO Output Voltage (Notes 2, 3) — 3.300 — V IOUT = 20mA 3.201 — 3.366 V 4.4V VIN 5.5V, 0mA IOUT 400mA 3.000 — — V 0mA IOUT400mA (Note 4) IOUT Output Current 400 — — mA REG(LINE) Line Regulation — -0.5 0.05 — — +0.5 % VIN = 4.3V to 5.5V REG(LOAD) Load Regulation — -1.5 -0.1 — — +0.5 % IOUT = 0.1mA to 400mA VDR Drive Voltage VIN - 0.2 VIN - 0.3 VIN - 0.1 — — — V 4.3V VIN 5.5V, IDR = 200A — — 35 — 150 200 mV Note 1: 2: 3: 4: 5: 6: VIN < VTH(LO), IDR = 200A Ensured by design. See 5V Detect Thresholds, Figure 4-1. Recommended source impedance for 5V supply: 0.25. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during 5V detect threshold transitions. In Application Circuit, Figure 3-1. See Timing Diagram, Figure 4-2. Ground Current is independent of ILOAD. DS21378C-page 2 2001-2012 Microchip Technology Inc. TC1267 TC1267 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7F, unless otherwise noted. Boldface type specifications apply over full operating range. Symbol Parameter Min Typ Max Units Test Conditions IDR(PK) Peak Drive Current 7 6 — — — — mA tDH Drive High Delay (Notes 1, 5) — — 4 — — 8 sec CDR = 1.2nF, VIN ramping up, measured from VIN = VTH(HI) to VDR = 2V tDL Drive Low Delay (Notes 1, 5) — — 0.6 — 1.5 3.0 sec CDR = 1.2nF, VIN ramping down, measured from VIN = VTH(LO) to VDR = 2V Note 1: 2: 3: 4: 5: 6: Sinking: VIN = 3.75V, VDR = 1V; Sourcing: VIN = 4.3V, VIN – VOR = 2V Ensured by design. See 5V Detect Thresholds, Figure 4-1. Recommended source impedance for 5V supply: 0.25. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during 5V detect threshold transitions. In Application Circuit, Figure 3-1. See Timing Diagram, Figure 4-2. Ground Current is independent of ILOAD. 2001-2012 Microchip Technology Inc. DS21378C-page 3 TC1267 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: 3.0 PIN FUNCTION TABLE Pin No. Symbol Description 1 VAUX 2 VIN 3 GND Logic and power ground. 4 VOUT LDO 3.3V output. 5 DR Auxiliary input supply, nominally 3.3V. Main input supply for the TC1267, nominally 5V. Driver output for external P-channel MOSFET pass element. DETAILED DESCRIPTION FIGURE 3-1: APPLICATION CIRCUIT Q1 TAB IS GND VIN GND VOUT DR VAUX TC1267 3.3V 5V C1 4.7μF 3.3V C2 0.1μF C3 0.1μF C4 4.7μF C5 0.1μF NOTE: External switch (Q1): use Motorola MGSF1P02ELT1 or equivalent (PMOS, typical Gate Threshold Voltage = 1V, typical RDS(ON) = 0.4Ω at VGS = 2.5V) DS21378C-page 4 2001-2012 Microchip Technology Inc. TC1267 4.0 THERMAL CONSIDERATIONS 4.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 4.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION 4-1: Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 5V ± 5% VOUTMIN = 3.217V ILOADMAX = 400mA TJMAX = 95°C TAMAX = 70°C JA = 27°C/W (DDPAK mounted on 1000 sq mm topside copper area) Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD (VINMAX – VOUTMIN)ILOADMAX PD (VINMAX – VOUTMIN)ILOADMAX Where: = (5.25V - 3.217V) 400mA PD = Worst case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current = 813mW The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (JA). Maximum allowable power dissipation: PDMAX = (TJMAX – TAMAX) JA = (95 – 70) 27 = 423mW In this example, the TC1267 dissipates a maximum of 813mW; below the allowable limit of 926mW. EQUATION 4-2: PDMAX = (TJMAX – TAMAX) JA Where all terms are previously defined. Table 4-1 shows various values of JA for the TC1267 packages. TABLE 4-1: Copper Area (Topside)* THERMAL RESISTANCE GUIDELINES FOR TC1267 IN 5-PIN DDPAK Copper Area (Backside) Board Area Thermal Resistance JA) 2500 sq mm 2500 sq mm 2500 sq mm 25°C/W 1000 sq mm 2500 sq mm 2500 sq mm 27°C/W 125 sq mm 35°C/W 2500 sq mm 2500 sq mm *Tab of device attached to topside copper. 2001-2012 Microchip Technology Inc. DS21378C-page 5 TC1267 FIGURE 4-1: 5V DETECT THRESHOLD 4.4V VHYST VTH(HI) VIN VTH(LO) 3.65V 2.0V DR 2.0V NOTE: VIN rise and fall times (10% to 90%) to be ≥ 100μsec. FIGURE 4-2: TIMING DIAGRAM 4.4V VIN 3.65V tDH tDL DR 2.0V 2.0V NOTE: VIN rise and fall times (10% to 90%) to be ≤ 0.1μsec. DS21378C-page 6 2001-2012 Microchip Technology Inc. TC1267 5.0 TYPICAL CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. IQ vs. VIN vs. Junction Temperature 0.45 +125°C IO = 0.1mA VAUX = 0V 0.40 0.35 IQ vs. VIN vs. Junction Temperature 0.45 0.35 +125°C 0.30 IQ (mA) IQ (mA) 0.30 0.25 0.20 0.15 0.25 +25°C 0.20 0.15 -5°C 0.10 -5°C 0.10 +25°C 0.05 0.05 0.00 0.00 0 1 2 3 VIN (V) 4 5 6 0 IQ (Aux) vs. VAUX vs. Junction Temperature 0.35 IQ (Aux) (mA) +125°C -5°C 0.15 0.10 +25°C 0.05 2 3 VIN (V) 4 5 6 IO = 0mA VAUX = 5V 0.30 0.25 0.20 1 IQ (Aux) vs. VAUX vs. Junction Temperature 0.35 IO = 0mA VAUX = 0V 0.30 IQ (Aux) (mA) IO = 0.1mA VAUX = 3.3V 0.40 0.25 0.20 -5°C +125°C +25°C 0.15 0.10 0.05 0.00 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3 3.6 VAUX (V) 0.00 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3 3.6 VAUX (V) LDO Output Voltage vs. Junction Temperature 3.34 3.33 IO = 200mA VIN = 5V VOUT (V) 3.32 3.31 3.30 3.29 3.28 3.27 3.26 -50 -25 0 25 50 75 100 125 JUNCTION TEMPERATURE °C 2001-2012 Microchip Technology Inc. DS21378C-page 7 TC1267 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Drive High Delay Drive Low Delay VIN steps from 0.8V to 5V See application circuit on Page 5 ILOAD = 200mA Trace 1: VIN stepping for 0.8V to 5V Trace 2: DR TH(HI) TDH = < 4 S VO (min) with VIN Rising Trace 1: VIN stepping for 5.5V to 0V R TDL = < 600nS VO (min) with VIN Falling Notice no voltage spikes during transition from VAUX to LDO output VOUT voltage difference is IOUT x RDS(ON) and variations between VAUX supply and LDO output voltage Trace 1: VIN – 3A charging a 1500µF capacitor Trace 2: DR going high at VTH(HI) Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.24V ILOAD = 20mA DS21378C-page 8 VOUT voltage difference is IOUT x RDS(ON) + voltage difference from LDO to VAUX supply Trace 1: VIN – discharging a 1500µF capacitor Trace 2: DR going low at VTH(LO) Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.14V ILOAD = 20mA 2001-2012 Microchip Technology Inc. TC1267 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Package marking data not available at this time. 6.2 Taping Form Component Taping Orientation for 5-Pin DDPAK Devices PIN 1 User Direction of Feed Device Marking W P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 24 mm 16 mm 750 13 in 5-Pin DDPAK 6.3 Package Dimensions Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 5-Pin DDPAK .410 (10.41) .385 (9.78) .183 (4.65) .170 (4.32) .067 (1.70) .045 (1.14) .055 (1.40) .045 (1.14) 3° - 7° (5x) .370 (9.40) .330 (8.38) .010 (0.25) .000 (0.00) .605 (15.37) .549 (13.95) .026 (0.66) .014 (0.36) .110 (2.79) .068 (1.72) .037 (0.94) .026 (0.66) PIN 1 .067 (1.70) TYP. 8° MAX. Dimensions: inches (mm) 2001-2012 Microchip Technology Inc. DS21378C-page 9 TC1267 7.0 REVISION HISTORY Revision C (November 2012) Added a note to each package outline drawing. DS21378C-page 10 2001-2012 Microchip Technology Inc. TC1267 SALES AND SUPPORT Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2001-2012 Microchip Technology Inc. DS21378C-page11 TC1267 NOTES: DS21378C-page12 2001-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2001-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620767818 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2001-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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