BZT55B2V4-BZT55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode QUADRO Mini-MELF (LS34) HERMETICALLY SEALED GLASS C Features Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% B Moisture sensitivity level 1 D E Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable A Unit (mm) Unit (inch) Min Max Min A 3.30 3.70 0.130 0.146 Dimensions Mechanical Data Case : QUADRO Mini-MELF Package (JEDEC DO-213) Max High temperature soldering guaranteed : 270°C/10s B 1.40 1.60 0.055 0.063 Polarity : Indicated by cathode band C 0.25 0.40 0.010 0.016 Weight : 29 ± 2.5 mg D 1.25 1.40 0.049 0.055 E 1.80 0.071 Ordering Information Package Part No. Packing BZT55BXXX L1 QUADRO Mini-MELF 2.5Kpcs / 7" Reel BZT55BXXX L0 QUADRO Mini-MELF 10Kpcs / 13" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage IF=10mA Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 500 mW VF 1.0 V RθJA 500 °C/W TJ, TSTG -65 to + 175 °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage IZT IZM BreakdownRegion Leakage Region Forward Region VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Version : E09 BZT55B2V4-BZT55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1.0V Maximum @ IF = 10 mA for all part numbers VZ @ IZT (Volt) IZT(mA) ZZT @ IZT(Ω) Max IZK(mA) ZZK @ IZK(Ω) Max IR @ VR(μA) Max VR(V) 2.45 5 85 1 600 50 1 2.65 2.75 5 85 1 600 10 1 3.0 2.94 3.06 5 85 1 600 4 1 BZT55B3V3 3.3 3.23 3.37 5 85 1 600 2 1 BZT55B3V6 3.6 3.53 3.67 5 85 1 600 2 1 BZT55B3V9 3.9 3.82 3.98 5 85 1 600 2 1 BZT55B4V3 4.3 4.21 4.39 5 75 1 600 1 1 BZT55B4V7 4.7 4.61 4.79 5 60 1 600 0.5 1 BZT55B5V1 5.1 5.00 5.20 5 35 1 550 0.1 1 BZT55B5V6 5.6 5.49 5.71 5 25 1 450 0.1 1 BZT55B6V2 6.2 6.08 6.32 5 10 1 200 0.1 2 BZT55B6V8 6.8 6.66 6.94 5 8 1 150 0.1 3 BZT55B7V5 7.5 7.35 7.65 5 7 1 50 0.1 5 BZT55B8V2 8.2 8.04 8.36 5 7 1 50 0.1 6.2 BZT55B9V1 9.1 8.92 9.28 5 10 1 50 0.1 6.8 BZT55B10 10 9.80 10.20 5 15 1 70 0.1 7.5 BZT55B11 11 10.78 11.22 5 20 1 70 0.1 8.2 BZT55B12 12 11.76 12.24 5 20 1 90 0.1 9.1 BZT55B13 13 12.74 13.26 5 26 1 110 0.1 10 BZT55B15 15 14.70 15.30 5 30 1 110 0.1 11 BZT55B16 16 15.68 16.32 5 40 1 170 0.1 12 BZT55B18 18 17.64 18.36 5 50 1 170 0.1 13 BZT55B20 20 19.60 20.40 5 55 1 220 0.1 15 BZT55B22 22 21.56 22.44 5 55 1 220 0.1 16 BZT55B24 24 23.52 24.48 5 80 1 220 0.1 18 BZT55B27 27 26.46 27.54 5 80 1 220 0.1 20 BZT55B30 30 29.40 30.60 5 80 1 220 0.1 22 BZT55B33 33 32.34 33.66 5 80 1 220 0.1 24 BZT55B36 36 35.28 36.72 5 80 1 220 0.1 27 BZT55B39 39 38.22 39.78 2.5 90 0.5 500 0.1 28 BZT55B43 43 42.14 43.86 2.5 90 0.5 600 0.1 32 BZT55B47 47 46.06 47.94 2.5 110 0.5 700 0.1 35 BZT55B51 51 49.98 52.02 2.5 125 0.5 700 0.1 38 BZT55B56 56 54.88 57.12 2.5 135 0.5 1000 0.1 42 BZT55B62 62 60.76 63.24 2.5 150 0.5 1000 0.1 47 BZT55B68 68 66.64 69.36 2.5 160 0.5 1000 0.1 51 BZT55B75 75 73.50 76.50 2.5 170 0.5 1000 0.1 56 Part Number Nom Min Max BZT55B2V4 2.4 2.35 BZT55B2V7 2.7 BZT55B3V0 Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current ( IZT or IZK) is superimposed to IZT or IZK. Version : E09 BZT55B2V4-BZT55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics FIG 1 Typical Forward Characteristics 100 Zener Current (mA) Forward Current (mA) 1000 100 Ta=25°C 10 1 10 1 Ta=25°C 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 Forward Voltage (V) 6 7 8 9 10 11 12 FIG 4 Admissible Power Disspation Curve FIG 3 Zener Breakdown Characteristics 600 Power Dissipation (mW) 10 Zener Current (mA) 5 Zener Voltage (V) 100 1 0 500 400 300 200 100 0 0 10 20 30 40 50 60 70 0 80 40 Zener Voltage (V) 80 120 160 200 Ambient Tempeture (°C) FIG 5 Typical Capacitance FIG 6 Effect of Zener Voltage on Impedence 1000 1000 100 Dynamic Impedence (Ώ) Capacitance(pF) 4 Iz=5mA 100 1V Bias Ta=150°C 10 Bias at 50% of VZ(Nom) Iz=1mA Ta=25°C 10 Iz=20m 1 1 1 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version : E09