Central CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100 mA max to 200 mA max. ♦ ♦ SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: D95E DB1E DB2E DA5E MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current SYMBOL VRRM 40 UNITS V IF IFRM 200 mA Peak Repetitive Forward Voltage 350 mA Forward Surge Current, tp=10ms IFSM 750 mA PD 350 mW TJ, Tstg -65 to +150 °C ΘJA 357 °C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL ♦BVR VF ♦VF ♦VF ♦♦VF ♦ ♦♦ TEST CONDITIONS µA IR=100µ IF=2.0mA IF=15mA IF=100mA IF=200mA IR IR CT VR=25V VR=25V, TA=100°C VR=1.0V, f=1 MHz trr IF=IR=10mA, Irr=1.0mA, RL=100Ω (TA=25°C unless otherwise noted) MIN TYP 40 50 0.29 MAX UNITS 0.33 V V 0.37 0.42 V 0.61 0.80 V 0.65 1.0 V 90 500 nA 25 7.0 100 µA pF 5.0 ns Enhanced specification. Additional Enhanced specification. R2 (6-August 2003) Central CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE 2 1 2 1 D1 3 D2 3 2 1 D1 D2 3 2 1 D1 D2 3 LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: CMPSH-3E 1) Anode 2) No Connection 3) Cathode CMPSH-3AE 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 CMPSH-3CE 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 CMPSH-3SE 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: D95E MARKING CODE: DB1E MARKING CODE: DB2E MARKING CODE: DA5E R2 (6-August 2003)