Freescale Semiconductor Technical Data Document Number: MHW10186N Rev. 0, 11/2006 Gallium Arsenide CATV Amplifier Module MHW10186N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant 1000 MHz 18.5 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Input Value Output Value Unit 300 300 V 2 2 kV Table 2. ESD Maximum Ratings Rating Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 1000 MHz Power Gain 1000 MHz Gp 18 18.5 19.5 dB Slope 40 - 1000 MHz S 0.2 0.6 1.2 dB GF — 0.3 0.8 dB 20 19 18 15 — — — — — — — — 20 19 18 17 — — — — — — — — Gain Flatness (40 - 1000 MHz, Peak - to - Valley) Return Loss — Input (Zo = 75 Ohms) Return Loss — Output (Zo = 75 Ohms) © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor IRL 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz dB ORL 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz dB MHW10186N 1 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CSO79 CSO112 CSO132 — — — - 72 - 65 - 67 - 64 - 61 - 60 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT XMD79 XMD112 XMD132 — — — - 58 - 58 - 58 — — — Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CTB79 CTB112 CTB132 — — — - 64 - 61 - 62 - 60 - 58 - 58 NF — — — 4 3.7 4.1 5 5 5 dB IDC 230 250 265 mA Noise Figure DC Current (VDC = 24 V, TC = - 20° to +100°C) dBc dBc dBc 50 MHz 870 MHz 1000 MHz MHW10186N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW10186N RF Device Data Freescale Semiconductor 3 REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2006 Description • Initial Release of Data Sheet MHW10186N 4 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MHW10186N Document Number: RF Device Data MHW10186N Rev. 0, 11/2006 Freescale Semiconductor 5