FREESCALE MHW10186N

Freescale Semiconductor
Technical Data
Document Number: MHW10186N
Rev. 0, 11/2006
Gallium Arsenide
CATV Amplifier Module
MHW10186N
Features
• Specified for 79 - , 112 - and 132 - Channel Loading
• Excellent Distortion Performance
• Built - in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
Applications
• CATV Systems Operating in the 40 to 1000 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
• RoHS Compliant
1000 MHz
18.5 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Rating
Vin
+65
dBmV
DC Supply Voltage
VCC
+26
Vdc
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Input Value
Output Value
Unit
300
300
V
2
2
kV
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
1000
MHz
Power Gain
1000 MHz
Gp
18
18.5
19.5
dB
Slope
40 - 1000 MHz
S
0.2
0.6
1.2
dB
GF
—
0.3
0.8
dB
20
19
18
15
—
—
—
—
—
—
—
—
20
19
18
17
—
—
—
—
—
—
—
—
Gain Flatness (40 - 1000 MHz, Peak - to - Valley)
Return Loss — Input
(Zo = 75 Ohms)
Return Loss — Output
(Zo = 75 Ohms)
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
IRL
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
871 - 1000 MHz
dB
ORL
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
871 - 1000 MHz
dB
MHW10186N
1
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
CSO79
CSO112
CSO132
—
—
—
- 72
- 65
- 67
- 64
- 61
- 60
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +46 dBmV/ch., FM = 55 MHz)
(Vout = +44 dBmV/ch., FM = 55 MHz)
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
XMD79
XMD112
XMD132
—
—
—
- 58
- 58
- 58
—
—
—
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
CTB79
CTB112
CTB132
—
—
—
- 64
- 61
- 62
- 60
- 58
- 58
NF
—
—
—
4
3.7
4.1
5
5
5
dB
IDC
230
250
265
mA
Noise Figure
DC Current (VDC = 24 V, TC = - 20° to +100°C)
dBc
dBc
dBc
50 MHz
870 MHz
1000 MHz
MHW10186N
2
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
S
B
A
Z
0.010
M
T F
M
A
M
V
J
F
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
Q
2X
R
F
2X 6−32UNC−2B
L
2X
0.010
U
Z T A
M
M
E
1 2
3
5
7 8 9
C
N
K
E
4X
2X
0.010
M
Z T A
G
7X
P
D
0.020
Y
INCHES
MIN
MAX
−−− 1.775
−−− 1.085
−−− 0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−− 0.600
1.500 BSC
0.200 BSC
−−− 0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−− 15.24
38.100 BSC
5.080 BSC
−−− 6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
Z
X
T
W
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
X
M
T A
M
X
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
CASE 1302 - 01
ISSUE E
MHW10186N
RF Device Data
Freescale Semiconductor
3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2006
Description
• Initial Release of Data Sheet
MHW10186N
4
RF Device Data
Freescale Semiconductor
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MHW10186N
Document
Number:
RF
Device
Data MHW10186N
Rev. 0, 11/2006
Freescale
Semiconductor
5