Freescale Semiconductor Technical Data Document Number: MHW1345N Rev. 3, 5/2006 General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Under All Load Conditions Applications • Driver Amplifier in 50 Ohm Systems Requiring High Linearity • Instrumentation Amplifiers • Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz Frequency Range • Possible Replacement for CA2830C Description • 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module • Replaced MHW1345. There are no form, fit or function changes with this part replacement. • RoHS Compliant MHW1345N 10 - 200 MHz 34.5 dB 800 mW GENERAL PURPOSE LINEAR AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit DC Supply Voltage VCC 28 Vdc RF Power Input Pin +5 dBm Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Table 2. Electrical Characteristics (TC = 25°C, VCC = 24 V, 50 Ω system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 10 — 200 MHz Gain Flatness (f = 10 - 200 MHz) GF — ± 0.5 ±1 dB Power Gain (f = 100 MHz) Gp 33.5 34.5 35.5 dB Noise Figure, Broadband (f = 200 MHz) NF — 3.8 4.5 dB Power Output — 1 dB Compression (f = 10 - 200 MHz) P1dB 630 800 — mW Power Output — 1 dB Compression (f = 10 - 200 MHz, VCC = 28 V) P1dB 1000 1260 — mW Third Order Intercept (See Figure 2, f1 = 200 MHz) ITO 43 44 — dBm VSWR — 1.5:1 2:1 — dso — - 60 - 50 dB Peak Envelope Power (Two Tone Distortion Test — See Figure 2) (f = 10 - 200 MHz @ - 32 dB IMD) PEP 600 800 — mW Supply Current ICC 270 310 330 mA Input/Output VSWR (f = 10 - 200 MHz) Second Harmonic Distortion (Tone at 100 mW, f2H = 150 MHz) © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHW1345N 1 Table 3. S - Parameters (Biased at 24 Volts, T = 25°C Zo = 50Ω) S11 S21 S12 S22 Frequency (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 10 - 19.3 45.5 34.6 - 0.6 - 47.0 2.3 - 14.5 76.8 50 - 15.6 35.0 34.2 - 56.7 - 47.5 - 30.3 - 12.6 45.0 100 - 13.2 34.4 33.9 - 114 - 47.9 - 62.9 - 10.8 10.7 200 - 11.1 30.1 33.5 134 - 48.3 - 128 - 14.9 - 42.6 Magnitude in dB, Phase Angle in degrees. PO PIN CONFIGURATION IMD 1 2 3 4 5 6 7 8 9 INPUT OUTPUT 0.01 μF VCC Figure 1. External Connections f1 f2 2f2−f1 ITO + P ) IMD @IMD u 60dB O 2 PEP = 4X PO @ IMD = −32dB Figure 2. Intermodulation Test MHW1345N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX − − − 45.085 − − − 27.559 − − − 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW1345N RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHW1345N Document Number: MHW1345N 4Rev. 3, 5/2006 RF Device Data Freescale Semiconductor