Freescale Semiconductor Technical Data Document Number: MHW9146N Rev. 4, 5/2006 Gallium Arsenide CATV Amplifier Module MHW9146N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 870 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module • Replaced MHW9146. There are no form, fit or function changes with this part replacement. • RoHS Compliant 870 MHz 14.3 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Table 2. ESD Maximum Ratings Rating Input Value Output Value Unit 200 200 V 2 2 kV Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 870 MHz Power Gain 870 MHz Gp 13.8 14.3 14.8 dB Slope 40 - 870 MHz S 0 0.4 1.0 dB Gain Flatness (40 - 870 MHz, Peak - to - Valley) GF — — 0.5 dB Return Loss — Input (Zo = 75 Ohms) IRL 20 18 — — — — 20 18 — — — — Return Loss — Output (Zo = 75 Ohms) 40 - 500 MHz f > 501 MHz ORL 40 - 160 MHz f > 160 MHz © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor dB dB MHW9146N 1 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CSO79 CSO112 CSO132 — — — - 68 - 63 - 63 - 64 - 60 - 60 dBc Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55.25 MHz ) (Vout = +46 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT XMD79 XMD112 XMD132 — — — - 60 - 60 - 60 - 55 - 55 - 55 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT CTB79 CTB112 CTB132 — — — - 64 - 64 - 64 - 60 - 60 - 60 NF — — — — 4.4 3.8 4.0 4.3 5.5 — — 5.5 dB IDC 230 245 260 mA dBc dBc Noise Figure 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = 45°C) Note: This device requires an external 0.01 μF DC blocking capacitor connected to the output pin (Pin 9) as indicated in Figure 1. PIN CONFIGURATION 1 2 3 4 5 6 7 8 9 INPUT OUTPUT 0.01 μF 0.01 μF VCC Figure 1. External Connections MHW9146N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW9146N RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHW9146N Document Number: MHW9146N 4Rev. 4, 5/2006 RF Device Data Freescale Semiconductor