FREESCALE MRFG35010N

Freescale Semiconductor
Technical Data
Document Number: MRFG35010N
Rev. 6, 2/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
MRFG35010NT1
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 900 mW
Power Gain — 10 dB
Efficiency — 28%
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
• 9 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Drain- Source Voltage
Value
Unit
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
22.7(2)
0.15(2)
W
W/°C
Gate- Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Channel Temperature(1)
Tch
175
°C
Operating Case Temperature Range
TC
- 20 to +85
°C
Symbol
Value
Unit
RθJC
6.6(2)
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010NT1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
< 1.0
100
µAdc
Off State Drain Current
(VDS = 12 Vdc, VGS = - 1.9 Vdc)
IDSO
—
0.1
1.0
mAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
2.0
15
mAdc
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
- 1.2
- 1.0
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, IDQ = 180 mA)
VGS(Q)
- 1.2
- 0.95
- 0.7
Vdc
Power Gain
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Gps
9.0
10
—
dB
Output Power, 1 dB Compression Point
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
P1dB
—
9
—
W
hD
23
28
—
%
ACPR
—
- 43
- 40
dBc
Drain Efficiency
(VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
MRFG35010NT1
2
RF Device Data
Freescale Semiconductor
VSUPPLY
VBIAS
C11
C10
C9
C8
C7
C6
C5
C18
C4
C17
C16
C15
C14
C13
C12
C19
Z9
Z12
R1
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10 Z11
Z13
Z14
Z15
C20
C3
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z10
Z9
Z17
Z16
C22
0.045″ x 0.689″ Microstrip
0.045″ x 0.089″ Microstrip
0.020″ x 0.360″ Microstrip
0.045″ x 0.029″ Microstrip
0.045″ x 0.061″ Microstrip
0.045″ x 0.055″ Microstrip
0.300″ x 0.125″ Microstrip
0.146″ x 0.070″ Microstrip
0.025″ x 0.485″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
C21
0.400″ x 0.215″ Microstrip
0.025″ x 0.497″ Microstrip
0.025″ x 0.271″ Microstrip
0.025″ x 0.363″ Microstrip
0.025″ x 0.041″ Microstrip
0.045″ x 0.050″ Microstrip
0.045″ x 0.467″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C21, C22
0.5 pF Chip Capacitors
08051J0R5BBT
AVX
C2
0.2 pF Chip Capacitor
06035J0R2BBT
AVX
C3
0.5 pF Chip Capacitor
06035J0R5BBT
AVX
C4, C19, C20
6.8 pF Chip Capacitors
08051J6R8BBT
AVX
C5, C18
10 pF Chip Capacitors
100A100JP150X
ATC
C6, C17
100 pF Chip Capacitors
100A101JP150X
ATC
C7, C16
100 pF Chip Capacitors
100B101JP500X
ATC
C8, C15
1000 pF Chip Capacitors
100B102JP50X
ATC
C9, C14
0.1 µF Chip Capacitors
CDR33BX104AKWS
Kemet
C10, C13
39K pF Chip Capacitors
200B393KP50X
ATC
C11, C12
10 µF Chip Capacitors
GRM55DR61H106KA88B
Kemet
R1
47 Ω Chip Resistor
D55342M07B47JOR
Newark
MRFG35010NT1
RF Device Data
Freescale Semiconductor
3
C11
C10
C9
C14 C13
C8
C15
C7
C16
C6
C17
C5
C18
C12
C19
R1
C4
C20
C3
C1
C2
C22
C21
MRFG35010XX, Rev. 5
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010NT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
IRL
−10
−10
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_
−20
−20
−30
−30
−40
−40
ACPR
−50
ACPR (dBc)
IRL, INPUT RETURN LOSS (dB)
0
−50
−60
−60
1
0.1
10
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
60
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_
12
11.5
50
40
PAE
11
30
GT
10.5
20
10
10
9.5
0.1
1
PAE, POWER ADDED EFFICIENCY (%)
G T , TRANSDUCER GAIN (dB)
12.5
0
10
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010NT1
RF Device Data
Freescale Semiconductor
5
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.5
0.946
- 177.11
4.710
82.28
0.016
8.19
0.759
- 179.39
0.55
0.945
- 178.28
4.303
80.79
0.016
7.57
0.758
- 179.99
0.6
0.944
- 179.44
3.963
79.23
0.016
7.60
0.758
179.39
0.65
0.945
179.50
3.674
77.69
0.016
7.44
0.758
178.74
0.7
0.945
178.60
3.427
76.28
0.016
7.44
0.757
177.98
0.75
0.944
177.66
3.211
74.83
0.016
7.21
0.757
177.28
0.8
0.945
176.74
3.023
73.24
0.017
7.65
0.756
176.57
0.85
0.945
175.95
2.853
71.74
0.017
7.16
0.756
175.75
0.9
0.944
175.17
2.705
70.36
0.017
7.34
0.756
174.99
0.95
0.945
174.36
2.570
68.88
0.017
7.31
0.755
174.18
1
0.945
173.63
2.447
67.47
0.017
7.08
0.755
173.33
1.05
0.944
172.90
2.337
66.06
0.017
7.29
0.756
172.51
1.1
0.944
172.09
2.234
64.52
0.017
7.56
0.756
171.82
1.15
0.944
171.29
2.139
63.11
0.017
7.46
0.756
171.01
1.2
0.944
170.57
2.052
61.73
0.017
7.43
0.757
170.22
1.25
0.943
169.71
1.971
60.26
0.017
7.47
0.757
169.52
1.3
0.944
168.85
1.894
58.81
0.017
7.28
0.757
168.83
1.35
0.940
168.20
1.823
57.49
0.017
7.56
0.755
168.39
1.4
0.946
167.07
1.754
56.13
0.017
7.92
0.762
167.55
1.45
0.943
166.35
1.691
54.75
0.018
7.59
0.759
167.32
1.5
0.944
163.30
1.626
53.36
0.017
7.06
0.762
169.20
1.55
0.943
162.54
1.573
52.16
0.017
7.24
0.763
168.75
1.6
0.942
161.81
1.523
50.87
0.017
7.48
0.764
168.22
1.65
0.945
161.17
1.474
49.56
0.018
7.46
0.765
167.71
1.7
0.946
160.55
1.429
48.35
0.017
7.46
0.766
167.18
1.75
0.945
160.01
1.387
47.14
0.018
7.84
0.767
166.73
1.8
0.945
159.48
1.348
45.88
0.018
7.89
0.767
166.15
1.85
0.947
159.00
1.310
44.70
0.018
7.97
0.768
165.58
1.9
0.946
158.52
1.274
43.55
0.018
7.87
0.770
165.10
1.95
0.945
158.06
1.240
42.30
0.018
7.89
0.769
164.54
2
0.948
157.71
1.209
41.23
0.018
7.61
0.771
164.05
2.05
0.947
157.30
1.179
40.16
0.018
7.78
0.772
163.59
2.1
0.947
156.92
1.152
39.09
0.018
7.65
0.773
163.12
2.15
0.948
156.58
1.127
37.97
0.018
7.40
0.773
162.56
2.2
0.948
156.32
1.102
36.90
0.019
7.22
0.773
162.01
2.25
0.948
156.04
1.079
35.82
0.019
6.98
0.775
161.53
2.3
0.949
155.73
1.058
34.70
0.019
7.24
0.775
161.05
2.35
0.949
155.33
1.037
33.62
0.019
7.52
0.775
160.43
2.4
0.948
154.99
1.019
32.54
0.019
7.60
0.776
159.99
2.45
0.948
154.57
1.002
31.44
0.019
7.49
0.777
159.53
2.5
0.948
154.13
0.986
30.35
0.019
7.69
0.776
158.91
2.55
0.946
153.68
0.971
29.28
0.019
8.05
0.777
158.40
2.6
0.946
153.15
0.957
28.12
0.020
8.01
0.777
157.88
2.65
0.946
152.54
0.943
26.91
0.020
8.01
0.776
157.34
2.7
0.945
151.98
0.930
25.73
0.020
7.82
0.777
156.80
2.75
0.943
151.22
0.918
24.52
0.021
7.27
0.778
156.36
MRFG35010NT1
6
RF Device Data
Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.8
0.943
150.66
0.906
23.27
0.021
6.42
0.776
155.80
2.85
0.943
149.88
0.894
22.02
0.022
5.21
0.777
155.28
2.9
0.942
149.16
0.883
20.80
0.021
4.17
0.778
154.81
2.95
0.942
148.32
0.872
19.56
0.021
4.03
0.778
154.25
3
0.943
147.41
0.862
18.28
0.021
3.53
0.778
153.67
3.05
0.942
146.51
0.853
16.96
0.022
3.11
0.780
153.18
3.1
0.940
145.45
0.842
15.64
0.022
2.65
0.780
152.64
3.15
0.940
144.41
0.833
14.29
0.022
2.43
0.779
152.04
3.2
0.941
143.33
0.823
13.00
0.022
2.48
0.782
151.43
3.25
0.938
142.25
0.814
11.67
0.022
2.48
0.781
150.92
3.3
0.939
141.15
0.804
10.32
0.022
2.08
0.781
150.33
3.35
0.939
140.02
0.795
8.97
0.022
1.99
0.782
149.74
3.4
0.938
138.89
0.785
7.61
0.022
2.11
0.783
149.19
3.45
0.938
137.88
0.776
6.26
0.023
2.05
0.782
148.72
3.5
0.939
136.68
0.767
4.96
0.023
1.79
0.783
147.97
3.55
0.938
135.63
0.757
3.67
0.023
1.56
0.785
147.40
3.6
0.938
134.63
0.748
2.34
0.024
1.02
0.783
146.88
3.65
0.939
133.60
0.739
1.04
0.024
0.44
0.783
146.20
3.7
0.938
132.68
0.729
- 0.25
0.024
- 0.54
0.785
145.61
3.75
0.937
131.84
0.720
- 1.47
0.024
- 1.30
0.785
145.17
3.8
0.937
130.92
0.711
- 2.69
0.024
- 1.98
0.785
144.52
3.85
0.938
130.07
0.702
- 3.89
0.024
- 2.38
0.786
143.87
3.9
0.938
129.29
0.694
- 5.07
0.024
- 2.22
0.787
143.24
3.95
0.939
128.60
0.686
- 6.23
0.024
- 2.00
0.787
142.61
4
0.939
127.88
0.678
- 7.34
0.025
- 1.80
0.788
141.94
4.05
0.939
127.23
0.671
- 8.46
0.025
- 2.04
0.789
141.34
4.1
0.941
126.66
0.664
- 9.57
0.025
- 2.17
0.789
140.69
4.15
0.941
126.23
0.658
- 10.65
0.025
- 2.15
0.788
140.01
4.2
0.940
125.73
0.651
- 11.72
0.026
- 2.48
0.789
139.31
4.25
0.939
125.28
0.645
- 12.82
0.026
- 2.81
0.789
138.65
4.3
0.940
124.85
0.640
- 13.86
0.026
- 2.79
0.788
137.91
4.35
0.940
124.45
0.635
- 14.92
0.027
- 2.73
0.789
137.16
4.4
0.939
124.01
0.630
- 16.00
0.027
- 3.22
0.789
136.45
4.45
0.939
123.63
0.627
- 17.01
0.028
- 3.26
0.788
135.67
4.5
0.939
123.27
0.623
- 18.03
0.028
- 3.64
0.788
134.88
4.55
0.937
122.84
0.620
- 19.03
0.029
- 3.74
0.789
134.16
4.6
0.937
122.32
0.619
- 20.17
0.029
- 4.57
0.788
133.36
4.65
0.937
121.88
0.618
- 21.26
0.030
- 5.02
0.788
132.50
4.7
0.936
121.36
0.617
- 22.45
0.030
- 6.01
0.788
131.67
4.75
0.935
120.72
0.615
- 23.68
0.031
- 7.22
0.787
130.83
4.8
0.935
120.04
0.614
- 24.90
0.031
- 7.64
0.786
129.91
4.85
0.934
119.35
0.613
- 26.12
0.031
- 8.05
0.786
129.03
4.9
0.932
118.49
0.613
- 27.41
0.031
- 8.39
0.786
128.20
4.95
0.931
117.69
0.614
- 28.72
0.032
- 8.32
0.785
127.24
5
0.929
116.74
0.614
- 30.05
0.033
- 8.48
0.786
126.32
MRFG35010NT1
RF Device Data
Freescale Semiconductor
7
NOTES
MRFG35010NT1
8
RF Device Data
Freescale Semiconductor
NOTES
MRFG35010NT1
RF Device Data
Freescale Semiconductor
9
NOTES
MRFG35010NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
0.35 (0.89) X 45_" 5 _
N
K
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
C
4
1
2
3
S
ZONE X
mm
SOLDER FOOTPRINT
P
U
H
G
inches
10_DRAFT
Q
ZONE W
0.115
2.92
L
0.020
0.51
4
ZONE V
R
0.115
2.92
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
VIEW Y - Y
CASE 466 - 03
ISSUE D
PLD - 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35010NT1
RF Device Data
Freescale Semiconductor
11
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MRFG35010NT1
Document Number: MRFG35010N
Rev. 6, 2/2006
12
RF Device Data
Freescale Semiconductor