GS841Z18/36AT-180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp 4Mb Pipelined and Flow Through Synchronous NBT SRAMs Features • 256K x 18 and 128K x 36 configurations • User-configurable Pipelined and Flow Through mode • NBT (No Bus Turn Around) functionality allows zero wait • Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • IEEE 1149.1 JTAG-compatible Boundary Scan • 3.3 V +10%/–5% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleave Burst mode • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • Clock Control, registered, address, data, and control • ZZ Pin for automatic power-down • JEDEC-standard 100-lead TQFP package • Pb-Free 100-lead TQFP package available Functional Description The GS841Z18/36AT is a 4Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. 180 MHz–100 MHz 3.3 V VDD 2.5 V and 3.3 V VDDQ Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS841Z18/36AT may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edgetriggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS841Z18/36AT is implemented with GSI's high performance CMOS technology and is available in a JEDECStandard 100-pin TQFP package. Parameter Synopsis Pipeline 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.02 11/2004 tCycle tKQ IDD tKQ tCycle IDD –180 5.5 ns 3.2 ns 335 mA 8 ns 9.1 ns 210 mA –166 6.0 ns 3.5 ns 310 mA 8.5 ns 10 ns 190 mA –150 6.6 ns 3.8 ns 280 mA 10 ns 12 ns 165 mA –100 10 ns 4.5 ns 190 mA 12 ns 15 ns 135 mA 1/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 A6 A7 E1 E2 NC NC BB BA E3 VDD VSS CK W CKE G ADV NC NC A8 A9 GS841Z18T Pinout Rev: 1.02 11/2004 A17 NC NC VDDQ VSS NC DQA9 DQA8 DQA7 VSS VDDQ DQA6 DQA5 VSS QE VDD ZZ DQA4 DQA3 VDDQ VSS DQA2 DQA1 NC NC VSS VDDQ NC NC NC A10 A11 A12 A13 A14 A15 A16 LBO A5 A4 A3 A2 A1 A0 TMS VSS NC NC DQB1 DQB2 VSS VDDQ DQB3 DQB4 FT VDD VDD VSS DQB5 DQB6 VDDQ VSS DQB7 DQB8 DQB9 FT VSS VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 256K x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 TDI VSS VDD TDO TCK NC NC NC VDDQ 2/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 A6 A7 E1 E2 BD BC BB BA E3 VDD VSS CK W CKE G ADV NC NC A8 A9 GS841Z36T Pinout Rev: 1.02 11/2004 DQB9 DQB8 DQB7 VDDQ VSS DQB6 DQB5 DQB4 DQB3 VSS VDDQ DQB2 DQB1 VSS QE VDD ZZ DQA1 DQA2 VDDQ VSS DQA3 DQA4 DQA5 DQA6 VSS VDDQ DQA7 DQA8 DQA9 A12 A13 A14 A15 A16 LBO A5 A4 A3 A2 A1 A0 TMS TDI VSS VDD TDO VSS DQC6 DQC5 DQC4 DQC3 VSS VDDQ DQC2 DQC1 FT VDD VDD VSS DQD1 DQD2 VDDQ VSS DQD3 DQD4 DQD5 DQD6 VSS VDDQ DQD7 DQD8 DQD9 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 128K x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 TCK A10 A11 DQC9 DQC8 DQC7 VDDQ 3/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 100-Pin TQFP Pin Descriptions Symbol Type Description A 0, A 1 In Burst Address Inputs—Preload the burst counter A In Address Inputs CK In Clock Input Signal BA In Byte Write signal for data inputs DQA1–DQA9; active low BB In Byte Write signal for data inputs DQB1–DQB9; active low BC In Byte Write signal for data inputs DQC1–DQC9; active low BD In Byte Write signal for data inputs DQD1–DQD9; active low W In Write Enable; active low E1 In Chip Enable; active low E2 In Chip Enable; active high; for self decoded depth expansion E3 In Chip Enable; active low; for self decoded depth expansion G In Output Enable; active low ADV In Advance / Load—Burst address counter control pin CKE In Clock Input Buffer Enable; active low NC — No Connect DQA I/O Byte A Data Input and Output pins DQB I/O Byte B Data Input and Output pins DQC I/O Byte C Data Input and Output pins DQD I/O Byte D Data Input and Output pins ZZ In Power down control; active high FT In Pipeline/Flow Through Mode Control; active low LBO In Linear Burst Order; active low TMS — Scan Test Mode Select TDI — Scan Test Data In TDO — Scan Test Data Out TCK — Scan Test Clock VDD In 3.3 V power supply VSS In Ground VDDQ In 3.3 V output power supply for noise reduction Rev: 1.02 11/2004 4/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipeline Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function W BA BB BC BD Read H X X X X Write Byte “a” L L H H H Write Byte “b” L H L H H Write Byte “c” L H H L H Write Byte “d” L H H H L Write all Bytes L L L L L Write Abort/NOP L H H H H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted Low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the Output pins. Write operation occurs when the RAM is selected, CKE is active and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A Write Cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow Through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way as well, but differ in that the write pipeline is one cycle shorter, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.02 11/2004 5/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Synchronous Truth Table Operation Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ DQ Notes Read Cycle, Begin Burst R External L-H L L H X L H L L L Q Read Cycle, Continue Burst B Next L-H L H X X X X X L L Q 1,10 NOP/Read, Begin Burst R External L-H L L H X L H L H L High-Z 2 Dummy Read, Continue Burst B Next L-H L H X X X X X H L High-Z 1,2,10 Write Cycle, Begin Burst W External L-H L L L L L H L X L D 3 Write Cycle, Continue Burst B Next L-H L H X L X X X X L D 1,3,10 Write Abort, Continue Burst B Next L-H L H X H X X X X L High-Z 1,2,3,10 Deselect Cycle, Power Down D None L-H L L X X H X X X L High-Z Deselect Cycle, Power Down D None L-H L L X X X X H X L High-Z Deselect Cycle, Power Down D None L-H L L X X X L X X L High-Z Deselect Cycle D None L-H L L L H L H L X L High-Z Deselect Cycle, Continue D None L-H L H X X X X X X L High-Z None X X X X X X X X X H High-Z Current L-H H X X X X X X X L - Sleep Mode Clock Edge Ignore, Stall 1 1 4 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.02 11/2004 6/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Pipeline and Flow Through Read-Write Control State Diagram D Deselect R D R B W D W New Read New Write R W B B R B W R Burst Read W Burst Write D Key B D Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B and D represent input command codes, as indicated in the Synchronous Truth Table. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for Pipelined and Flow Through Read/Write Control State Diagram Rev: 1.02 11/2004 7/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Pipeline Mode Data I/O State Diagram Intermediate B W R B Intermediate R High Z (Data In) D Data Out (Q Valid) W D Intermediate Intermediate W Intermediate R High Z B D Intermediate Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Intermediate State (N+1) n Next State (n+2) n+1 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+2 n+3 Clock (CK) Command ƒ ƒ ƒ Current State Intermediate State Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.02 11/2004 8/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Flow Through Mode Data I/O State Diagram B W R B R High Z (Data In) Data Out (Q Valid) W D D W R High Z B D Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for: Pipeline and Flow Through Read Write Control State Diagram Rev: 1.02 11/2004 9/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details. Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Power Down Control ZZ State Function L Linear Burst H Interleaved Burst L or NC Active H Standby, IDD = ISB Note: There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences Linear Burst Sequence Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.02 11/2004 10/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC tKL CK tZZR tZZS tZZH ZZ Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Pin 14. Not all vendors offer this option, however most mark Pin 14 as VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Pin 66, a No Connect (NC) on GSI’s GS840Z18/36 NBT SRAM, the Parity Error open drain output on GSI’s GS841Z18/36 NBT SRAM, is often marked as a power pin on other vendor’s NBT-compatible SRAMs. Specifically, it is marked VDD or VDDQ on pipelined parts and VSS on flow through parts. Users of GSI NBT devices who are not actually using the ByteSafe™ parity feature may want to design the board site for the RAM with Pin 66 tied high through a 1k ohm resistor in Pipeline mode applications or tied low in Flow Through mode applications in order to keep the option to use non-configurable devices open. By using the pull-up resistor, rather than tying the pin to one of the power rails, users interested in upgrading to GSI’s ByteSafe NBT SRAMs (GS841Z18/36), featuring Parity Error detection and JTAG Boundary Scan, will be ready for connection to the active low, open drain Parity Error output driver at Pin 66 on GSI’s TQFP ByteSafe RAMs. Rev: 1.02 11/2004 11/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage in VDDQ Pins –0.5 to 4.6 V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 o TBIAS Temperature Under Bias –55 to 125 o C C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges Parameter Symbol Min. Typ. Max. Unit 3.3 V Supply Voltage VDD3 3.0 3.3 3.6 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 3.3 V VDDQ I/O Supply Voltage VDDQ3 3.0 3.3 3.6 V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.02 11/2004 12/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 VDDQ3 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 2.0 — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.8 V 1 VDDQ I/O Input High Voltage VIHQ 2.0 — VDDQ + 0.3 V 1,3 VDDQ I/O Input Low Voltage VILQ –0.3 — 0.8 V 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. VDDQ2 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 0.6*VDD — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.3*VDD V 1 VDDQ I/O Input High Voltage VIHQ 0.6*VDD — VDDQ + 0.3 V 1,3 VDDQ I/O Input Low Voltage VILQ –0.3 — 0.3*VDD V 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. Recommended Operating Temperatures Parameter Symbol Min. Typ. Max. Unit Notes Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 2 Ambient Temperature (Industrial Range Versions) TA –40 25 85 °C 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.02 11/2004 13/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 50% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 50% tKC VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDD/2 Output reference level VDDQ/2 Output load Fig. 1 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. Output Load 1 DQ 50Ω 30pF* VDDQ/2 * Distributed Test Jig Capacitance Rev: 1.02 11/2004 14/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA ZZ Input Current IIN1 VDD ≥ VIN ≥ VIH 0 V ≤ VIN ≤ VIH –1 uA –1 uA 1 uA 100 uA FT Input Current IIN2 VDD ≥ VIN ≥ VIL 0 V ≤ VIN ≤ VIL –100 uA –1 uA 1 uA 1 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.375 V 1.7 V — Output High Voltage VOH3 IOH = –8 mA, VDDQ = 3.135 V 2.4 V — Output Low Voltage VOL IOL = 8 mA — 0.4 V Operating Currents -180 Parameter Test Conditions Symbol Operating Current Device Selected; All other inputs ≥VIH or ≤ VIL Output open Standby Current ZZ ≥ VDD – 0.2 V Deselect Current Device Deselected; All other inputs ≥ VIH or ≤ VIL Rev: 1.02 11/2004 -166 -150 -100 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C 0 to 70°C –40 to 85°C Unit IDD Pipeline 335 345 310 320 280 290 190 200 mA IDD Flow-Thru 210 220 190 200 165 175 135 145 mA ISB Pipeline 20 30 20 30 20 30 20 30 mA ISB Flow-Thru 20 30 20 30 20 30 20 30 mA IDD Pipeline 55 65 50 60 50 60 40 50 mA IDD Flow-Thru 40 50 40 50 35 45 35 45 mA 15/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 AC Electrical Characteristics Pipeline Flow Through Parameter Symbol Clock Cycle Time -180 -166 -150 -100 Unit Min Max Min Max Min Max Min Max tKC 5.5 — 6.0 — 6.7 — 10 — ns Clock to Output Valid tKQ — 3.2 — 3.5 — 3.8 — 4.5 ns Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in Low-Z 1 tLZ 1.5 — 1.5 — 1.5 — 1.5 — ns Clock Cycle Time tKC 9.1 — 10.0 — 12.0 — 15.0 — ns Clock to Output Valid tKQ — 8.0 — 8.5 — 10.0 — 12.0 ns Clock to Output Invalid tKQX 3.0 — 3.0 — 3.0 — 3.0 — ns Clock to Output in Low-Z tLZ1 3.0 — 3.0 — 3.0 — 3.0 — ns Clock HIGH Time tKH 1.3 — 1.3 — 1.3 — 1.3 — ns Clock LOW Time tKL 1.5 — 1.5 — 1.5 — 1.5 — ns Clock to Output in High-Z tHZ1 1.5 3.2 1.5 3.5 1.5 3.8 1.5 5 ns G to Output Valid tOE — 3.2 — 3.5 — 3.8 — 5 ns G to output in Low-Z 1 tOLZ 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 — 3.2 — 3.5 — 3.8 — 5 ns Setup time tS 1.5 — 1.5 — 1.5 — 2.0 — ns Hold time tH 0.5 — 0.5 — 0.5 — 0.5 — ns ZZ setup time tZZS2 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 1 — 1 — 1 — 1 — ns ZZ recovery tZZR 20 — 20 — 20 — 20 — ns Notes: 1. These parameters are sampled and are not 100% tested 2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.02 11/2004 16/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Pipeline Mode Timing Write A Read B Suspend Read C tKH Write D writeno-op Read E Deselect tKC tKL CK tH tS A A B C D E tH tS CKE tH tS E* tH tS ADV tH tS W tH tH tS tS Bn tH tLZ tKQ tS DQ Rev: 1.02 11/2004 D(A) Q(B) Q(C) D(D) 17/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. tHZ tKQX Q(E) © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Flow Through Mode Timing Write A Write B Write B+1 Read C Cont Read D Write E Read F Write G tKL tKH tKC CK tH tS CKE tH tS E tH tS ADV tH tS W tH tS Bn tH tS A0–An A B C D E F G tKQ tH tKQ tLZ tS D(A) DQ D(B) D(B+1) tKQX tHZ Q(C) Q(D) tLZ D(E) tKQX Q(F) D(G) tOLZ tOE tOHZ G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 JTAG Port Operation Overview The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output drivers are powered by VDDQ. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected. Rev: 1.02 11/2004 18/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 JTAG Port Registers JTAG Pin Descriptions Pin Pin Name I/O Description TCK Test Clock In Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS Test Mode Select In The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. In The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level. TDI Test Data In TDO Test Data Out Output that is active depending on the state of the TAP state machine. Output changes in Out response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. Overview The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM’s JTAG Port to another device in the scan chain with as little delay as possible. Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register. Rev: 1.02 11/2004 19/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 JTAG TAP Block Diagram · · · · · · Boundary Scan Register · · 0 Bypass Register 0 108 · 1 · · 2 1 0 Instruction Register TDI TDO ID Code Register 31 30 29 · · · · 2 1 0 Control Signals TMS TCK Test Access Port (TAP) Controller Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. Rev: 1.02 11/2004 20/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Die Revision Code GSI Technology JEDEC Vendor ID Code I/O Configuration Not Used Presence Register Tap Controller Instruction Set ID Register Contents Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 x36 X X X X 0 0 0 X 1 0 0 1 0 0 0 0 1 0 0 0 0 0 0 1 1 0 1 1 0 0 1 1 x18 X X X X 0 0 0 X 1 0 0 1 0 0 0 0 1 0 1 0 0 0 0 1 1 0 1 1 0 0 1 1 Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load address, data or control signals into the RAM or to preload the I/O buffers. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table. Rev: 1.02 11/2004 21/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 JTAG Tap Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 0 1 1 Capture DR Capture IR 0 0 Shift DR 1 1 Shift IR 0 1 1 Exit1 DR 0 Exit1 IR 0 0 Pause DR 1 Exit2 DR 1 Update DR 1 1 0 0 Pause IR 1 Exit2 IR 0 1 0 0 Update IR 1 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is still determined by its input pins. Rev: 1.02 11/2004 22/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction. Rev: 1.02 11/2004 23/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 JTAG Port AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDDQ/2 Output reference level VDDQ/2 JTAG Port AC Test Load DQ 50Ω 30pF* VDDQ/2 * Distributed Test Jig Capacitance Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted. JTAG TAP Instruction Set Summary Instruction Code Description EXTEST 000 Places the Boundary Scan Register between TDI and TDO. 1 IDCODE 001 Preloads ID Register and places it between TDI and TDO. 1, 2 SAMPLE-Z 010 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. 1 RFU 011 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 SAMPLE/ PRELOAD 100 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. 1 GSI 101 GSI private instruction. 1 RFU 110 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 BYPASS 111 Places Bypass Register between TDI and TDO. Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state. Rev: 1.02 11/2004 24/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Notes 1 © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 JTAG Port Timing Diagram tTKC tTKH tTKL TCK tTH tTS TDI tTH tTS TMS tTKQ TDO tTH tTS Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol Min Max Unit TCK Cycle Time tTKC 50 — ns TCK Low to TDO Valid tTKQ — 20 ns TCK High Pulse Width tTKH 20 — ns TCK Low Pulse Width tTKL 20 — ns TDI & TMS Set Up Time tTS 10 — ns TDI & TMS Hold Time tTH 10 — ns Rev: 1.02 11/2004 25/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Output Driver Characteristics 120.0 100.0 Pull Down Drivers 80.0 60.0 40.0 20.0 VDDQ I Out (mA) I Out 0.0 VOut -20.0 VSS -40.0 -60.0 Pull Up Drivers -80.0 -100.0 -120.0 -140.0 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 V Out (Pull Down) VDDQ - V Out (Pull Up) 3.6V PD HD 3.3V PD HD 3.1V PD HD 3.1V PU HD 3.3V PU HD 3.6V PU HD BPR 1999.05.18 Rev: 1.02 11/2004 26/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 TQFP Package Drawing (Package T) L Min. Nom. Max A1 Standoff 0.05 0.10 0.15 A2 Body Thickness 1.35 1.40 1.45 b Lead Width 0.20 0.30 0.40 c Lead Thickness 0.09 — 0.20 D Terminal Dimension 21.9 22.0 22.1 D1 Package Body 19.9 20.0 20.1 E Terminal Dimension 15.9 16.0 16.1 E1 Package Body 13.9 14.0 14.1 e Lead Pitch — 0.65 — L Foot Length 0.45 0.60 0.75 L1 Lead Length — 1.00 — Y Coplanarity θ Lead Angle e D D1 Description c Pin 1 Symbol L1 θ b A1 A2 0.10 Y 0° — 7° E1 E Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. Rev: 1.02 11/2004 27/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Ordering Information—GSI NBT Synchronous SRAMs Org Part Number1 Type Package Speed2 (MHz/ns) TA3 256K x 18 GS841Z18AT-180 NBT Pipeline/Flow Through TQFP 180/8 C 256K x 18 GS841Z18AT-166 NBT Pipeline/Flow Through TQFP 166/8.5 C 256K x 18 GS841Z18AT-150 NBT Pipeline/Flow Through TQFP 150/10 C 256K x 18 GS841Z18AT-100 NBT Pipeline/Flow Through TQFP 100/12 C 128K x 36 GS841Z36AT-180 NBT Pipeline/Flow Through TQFP 180/8 C 128K x 36 GS841Z36AT-166 NBT Pipeline/Flow Through TQFP 166/8.5 C 128K x 36 GS841Z36AT-150 NBT Pipeline/Flow Through TQFP 150/10 C 128K x 36 GS841Z36AT-100 NBT Pipeline/Flow Through TQFP 100/12 C 256K x 18 GS841Z18AT-180I NBT Pipeline/Flow Through TQFP 180/8 I 256K x 18 GS841Z18AT-166I NBT Pipeline/Flow Through TQFP 166/8.5 I 256K x 18 GS841Z18AT-150I NBT Pipeline/Flow Through TQFP 150/10 I 256K x 18 GS841Z18AT-100I NBT Pipeline/Flow Through TQFP 100/12 I 128K x 36 GS841Z36AT-180I NBT Pipeline/Flow Through TQFP 180/8 I 128K x 36 GS841Z36AT-166I NBT Pipeline/Flow Through TQFP 166/8.5 I 128K x 36 GS841Z36AT-150I NBT Pipeline/Flow Through TQFP 150/10 I 128K x 36 GS841Z36AT-100I NBT Pipeline/Flow Through TQFP 100/12 I 256K x 18 GS841Z18AGT-180 NBT Pipeline/Flow Through Pb-free TQFP 180/8 C 256K x 18 GS841Z18AGT-166 NBT Pipeline/Flow Through Pb-free TQFP 166/8.5 C 256K x 18 GS841Z18AGT-150 NBT Pipeline/Flow Through Pb-free TQFP 150/10 C 256K x 18 GS841Z18AGT-100 NBT Pipeline/Flow Through Pb-free TQFP 100/12 C 128K x 36 GS841Z36AGT-180 NBT Pipeline/Flow Through Pb-free TQFP 180/8 C Status 128K x 36 GS841Z36AGT-166 NBT Pipeline/Flow Through Pb-free TQFP 166/8.5 C Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8Z36A-100IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.02 11/2004 28/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 Ordering Information—GSI NBT Synchronous SRAMs Org Part Number1 Type Package Speed2 (MHz/ns) TA3 128K x 36 GS841Z36AGT-150 NBT Pipeline/Flow Through Pb-free TQFP 150/10 C 128K x 36 GS841Z36AGT-100 NBT Pipeline/Flow Through Pb-free TQFP 100/12 C 256K x 18 GS841Z18AGT-180I NBT Pipeline/Flow Through Pb-free TQFP 180/8 I 256K x 18 GS841Z18AGT-166I NBT Pipeline/Flow Through Pb-free TQFP 166/8.5 I 256K x 18 GS841Z18AGT-150I NBT Pipeline/Flow Through Pb-free TQFP 150/10 I 256K x 18 GS841Z18AGT-100I NBT Pipeline/Flow Through Pb-free TQFP 100/12 I 128K x 36 GS841Z36AGT-180I NBT Pipeline/Flow Through Pb-free TQFP 180/8 I 128K x 36 GS841Z36AGT-166I NBT Pipeline/Flow Through Pb-free TQFP 166/8.5 I 128K x 36 GS841Z36AGT-150I NBT Pipeline/Flow Through Pb-free TQFP 150/10 I Status 128K x 36 GS841Z36AGT-100I NBT Pipeline/Flow Through Pb-free TQFP 100/12 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8Z36A-100IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.02 11/2004 29/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology GS841Z18/36AT-180/166/150/100 4Mb Synchronous NBT Datasheet Revision History DS/DateRev. Code: Old; New Types of Changes Page /Revisions/Reason Format or Content • Creation of new datasheet 841Z18A_r1 841Z18A_r1; 841Z18A_r1_01 Content 841Z18A_r1_01; 841Z18A_r1_02 Format/Content Rev: 1.02 11/2004 • Changed description of E2 in pin description table (from active low to active high) • Removed pin locations from pin description table • Removed 200 MHz speed bin • Updated format • Added Pb-free information for TQFP • Updated timing diagrams 30/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2001, GSI Technology