Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 1.8 V or 2.5 V core power supply and I/O supply • User-configurable Pipeline and Flow Through mode • ZQ mode pin for user-selectable high/low output drive • IEEE 1149.1 JTAG-compatible Boundary Scan • LBO pin for Linear or Interleave Burst mode • Pin-compatible with 2Mb, 4Mb, 9Mb, 18Mb, and 36Mb devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • JEDEC-standard 165-bump BGA package • RoHS-compliant 165-bump BGA package available The GS8644Z18/36E-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edgetriggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. Functional Description The GS8644Z18/36E-xxxV is a 72Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The GS8644Z18/36E-xxxV is implemented with GSI's high performance CMOS technology and is available in a JEDECstandard 165-bump BGA package. Parameter Synopsis -250 -225 -200 -166 -150 -133 Unit Pipeline 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.05 6/2006 tKQ tCycle 3.0 4.0 3.0 4.4 3.0 5.0 3.0 6.0 3.3 6.7 3.5 7.5 ns ns Curr (x18) Curr (x36) 385 450 360 415 335 385 305 345 295 325 265 295 mA mA tKQ tCycle 6.5 6.5 6.5 6.5 6.5 6.5 8.0 8.0 8.5 8.5 8.5 8.5 ns ns Curr (x18) Curr (x36) 265 290 265 290 265 290 255 280 240 265 225 245 mA mA 1/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV 165 Bump BGA—x18 Common I/O—Top View (Package E) 1 2 3 4 5 6 7 8 9 10 11 A NC A E1 BB NC E3 CKE ADV A A A A B NC A E2 NC BA CK W G A A NC B C NC NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPA C D NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA D E NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA E F NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA F G NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA G H FT MCH NC VDD VSS VSS VSS VDD NC ZQ ZZ H J DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC J K DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC K L DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC L M DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC M N DQPB NC VDDQ VSS NC NC NC VSS VDDQ NC NC N P NC A A A TDI A1 TDO A A A NC P R LBO A A A TMS A0 TCK A A A A R 11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch Rev: 1.05 6/2006 2/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV 165 Bump BGA—x36 Common I/O—Top View (Package E) 1 2 3 4 5 6 7 8 9 10 11 A NC A E1 BC BB E3 CKE ADV A A NC A B NC A E2 BD BA CK W G A A NC B C DQPC NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPB C D DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB D E DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB E F DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB F G DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB G H FT MCH NC VDD VSS VSS VSS VDD NC ZQ ZZ H J DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA J K DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA K L DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA L M DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA M N DQPD NC VDDQ VSS NC NC NC VSS VDDQ NC DQPA N P NC A A A TDI A1 TDO A A A NC P R LBO A A A TMS A0 TCK A A A A R 11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch Rev: 1.05 6/2006 3/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV GS8644Z18/36E-xxxV 165-Bump BGA Pin Description Symbol Type Description A 0, A 1 I Address field LSBs and Address Counter Preset Inputs A I Address Inputs DQA DQB DQC DQD I/O Data Input and Output pins BA , BB , BC , BD I Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low NC — No Connect CK I Clock Input Signal; active high CKE I Clock Enable; active low W I Write Enable; active low E1 I Chip Enable; active low E3 I Chip Enable; active low E2 I Chip Enable; active high FT I Flow Through / Pipeline Mode Control G I Output Enable; active low ADV I Burst address counter advance enable; active high ZQ I FLXDrive Output Impedance Control Low = Low Impedance [High Drive], High = High Impedance [Low Drive]) ZZ I Sleep mode control; active high LBO I Linear Burst Order mode; active low TMS I Scan Test Mode Select TDI I Scan Test Data In TDO O Scan Test Data Out TCK I Scan Test Clock MCH — Must Connect High VDD I Core power supply VSS I I/O and Core Ground VDDQ I Output driver power supply Rev: 1.05 6/2006 4/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipeline Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function W BA BB BC BD Read H X X X X Write Byte “a” L L H H H Write Byte “b” L H L H H Write Byte “c” L H H L H Write Byte “d” L H H H L Write all Bytes L L L L L Write Abort/NOP L H H H H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins. Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow Through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.05 6/2006 5/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Synchronous Truth Table Operation Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ DQ Notes Read Cycle, Begin Burst R External L-H L L H X L H L L L Q Read Cycle, Continue Burst B Next L-H L H X X X X X L L Q 1,10 NOP/Read, Begin Burst R External L-H L L H X L H L H L High-Z 2 Dummy Read, Continue Burst B Next L-H L H X X X X X H L High-Z 1,2,10 Write Cycle, Begin Burst W External L-H L L L L L H L X L D 3 Write Cycle, Continue Burst B Next L-H L H X L X X X X L D 1,3,10 Write Abort, Continue Burst B Next L-H L H X H X X X X L High-Z 1,2,3,10 Deselect Cycle, Power Down D None L-H L L X X H X X X L High-Z Deselect Cycle, Power Down D None L-H L L X X X X H X L High-Z Deselect Cycle, Power Down D None L-H L L X X X L X X L High-Z Deselect Cycle D None L-H L L L H L H L X L High-Z Deselect Cycle, Continue D None L-H L H X X X X X X L High-Z None X X X X X X X X X H High-Z Current L-H H X X X X X X X L - Sleep Mode Clock Edge Ignore, Stall 1 1 4 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.05 6/2006 6/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Pipelined and Flow Through Read Write Control State Diagram D B Deselect W R D R D W New Read New Write R W B B R B W R Burst Read W Burst Write D Key B D Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B, and D represent input command codes as indicated in the Synchronous Truth Table. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for Pipelined and Flow through Read/Write Control State Diagram Rev: 1.05 6/2006 7/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Pipeline Mode Data I/O State Diagram Intermediate B W R B Intermediate R High Z (Data In) D Data Out (Q Valid) W D Intermediate Intermediate W Intermediate R High Z B D Intermediate Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Intermediate State (N+1) n Next State (n+2) n+1 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+2 n+3 Clock (CK) Command ƒ ƒ ƒ Current State Intermediate State Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.05 6/2006 8/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Flow Through Mode Data I/O State Diagram B W R B R High Z (Data In) Data Out (Q Valid) W D D W R High Z B D Key Notes Input Command Code 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. Next State (n+1) n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ ƒ ƒ Next State Current State and Next State Definition for: Pipeline and Flow Through Read Write Control State Diagram Rev: 1.05 6/2006 9/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details. FLXDrive™ The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details. Mode Pin Functions Mode Name Pin Name Burst Order Control LBO Output Register Control FT Power Down Control ZZ FLXDrive Output Impedance Control ZQ State Function L Linear Burst H Interleaved Burst L Flow Through H or NC Pipeline L or NC Active H Standby, IDD = ISB L High Drive (Low Impedance) H or NC Low Drive (High Impedance) Note: There are pull-up devices on the ZQ and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above tables. Rev: 1.05 6/2006 10/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Burst Counter Sequences Linear Burst Sequence Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 1st address 00 01 10 11 1st address 00 01 10 11 2nd address 01 10 11 00 2nd address 01 00 11 10 3rd address 10 11 00 01 3rd address 10 11 00 01 4th address 11 00 01 10 4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC tKL CK tZZR tZZS tZZH ZZ Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal. Not all vendors offer this option, however most mark the pin VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Other vendors mark the pin as a No Connect (NC). GSI RAMs have an internal pull-up device on the FT pin so a floating FT pin will result in pipelined operation. If the part being replaced is a pipelined mode part, the GSI RAM is fully compatible with these sockets. In the unlikely event the part being replaced is a Flow Through device, the pin will need to be pulled low for correct operation. Rev: 1.05 6/2006 11/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Absolute Maximum Ratings (All voltages reference to VSS) Symbol Description Value Unit VDD Voltage on VDD Pins –0.5 to 4.6 V VDDQ Voltage on VDDQ Pins –0.5 to VDD V VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 4.6 V max.) V VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 4.6 V max.) V IIN Input Current on Any Pin +/–20 mA IOUT Output Current on Any I/O Pin +/–20 mA PD Package Power Dissipation 1.5 W TSTG Storage Temperature –55 to 125 o TBIAS Temperature Under Bias –55 to 125 oC C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges (1.8 V/2.5 V Version) Parameter Symbol Min. Typ. Max. Unit 1.8 V Supply Voltage VDD1 1.7 1.8 2.0 V 2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V 1.8 V VDDQ I/O Supply Voltage VDDQ1 1.7 1.8 VDD V 2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 VDD V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.05 6/2006 12/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV VDDQ2 & VDDQ1 Range Logic Levels Parameter Symbol Min. Typ. Max. Unit Notes VDD Input High Voltage VIH 0.6*VDD — VDD + 0.3 V 1 VDD Input Low Voltage VIL –0.3 — 0.3*VDD V 1 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Recommended Operating Temperatures Parameter Symbol Min. Typ. Max. Unit Notes Ambient Temperature (Commercial Range Versions) TA 0 25 70 °C 2 Ambient Temperature (Industrial Range Versions) TA –40 25 85 °C 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Undershoot Measurement and Timing Overshoot Measurement and Timing VIH 20% tKC VDD + 2.0 V VSS 50% 50% VDD VSS – 2.0 V 20% tKC VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Symbol Test conditions Typ. Max. Unit Input Capacitance CIN VIN = 0 V 4 5 pF Input/Output Capacitance CI/O VOUT = 0 V 6 7 pF Note: These parameters are sample tested. Rev: 1.05 6/2006 13/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDD/2 Output reference level VDDQ/2 Output load Fig. 1 Figure 1 Output Load 1 DQ 30pF* 50Ω Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. VDDQ/2 * Distributed Test Jig Capacitance DC Electrical Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current (except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA FT, ZQ, ZZ Input Current IIN VDD ≥ VIN ≥ 0 V –100 uA 100 uA Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA DC Output Characteristics (1.8 V/2.5 V Version) Parameter Symbol Test Conditions Min Max 1.8 V Output High Voltage VOH1 IOH = –4 mA, VDDQ = 1.6 V VDDQ – 0.4 V — 2.5 V Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.375 V 1.7 V — 1.8 V Output Low Voltage VOL1 IOL = 4 mA — 0.4 V 2.5 V Output Low Voltage VOL2 IOL = 8 mA — 0.4 V Rev: 1.05 6/2006 14/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Rev: 1.05 6/2006 IDD 170 200 IDD Pipeline Flow Through 120 ISB Flow Through 120 ISB Pipeline IDD 250 15 360 25 IDD IDDQ Pipeline IDDQ 270 20 IDD IDDQ Flow Through Flow Through 400 50 0 to 70°C IDD IDDQ Symbol Pipeline Mode 200 230 160 160 275 15 395 25 295 20 435 50 –40 to 85°C -250 170 190 120 120 250 15 335 25 270 20 370 45 200 220 160 160 275 15 370 25 295 20 405 45 –40 to 85°C -225 0 to 70°C Notes: 1. IDD and IDDQ apply to any combination of VDD1, VDD2, VDDQ1, and VDDQ2 operation. 2. All parameters listed are worst case scenario. — Device Deselected; All other inputs ≥ VIH or ≤ VIL Deselect Current (x18) — Operating Current (x36) ZZ ≥ VDD – 0.2 V Device Selected; All other inputs ≥VIH or ≤ VIL Output open Standby Current Test Conditions Parameter Operating Currents 160 180 120 120 250 15 315 20 270 20 345 40 0 to 70°C 190 210 160 160 275 15 350 20 295 20 380 40 –40 to 85°C -200 160 170 120 120 240 15 285 20 260 20 310 35 0 to 70°C 190 200 160 160 260 15 320 20 285 20 345 35 –40 to 85°C -166 150 170 120 120 225 15 275 20 245 20 295 30 0 to 70°C 180 200 160 160 250 15 310 20 270 20 330 30 –40 to 85°C -150 140 160 120 120 210 15 250 15 230 15 270 25 0 to 70°C 170 190 160 160 235 15 285 15 255 15 305 25 –40 to 85°C -133 mA mA mA mA mA mA mA mA Unit Preliminary GS8644Z18/36E-xxxV Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 15/30 © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV AC Electrical Characteristics Pipeline Flow Through Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid tKC tKQ tKQX Clock to Output in Low-Z -250 -225 -200 -166 -150 -133 Unit Min 4.0 — 1.0 Max — 2.3 — Min 4.4 — 1.0 Max — 2.5 — Min 5.0 — 1.0 Max — 2.7 — Min 6.0 — 1.0 Max — 2.9 — Min 6.7 — 1.0 Max — 3.3 — Min 7.5 — 1.0 Max — 3.5 — tLZ1 tS tH tKC tKQ tKQX 1.0 — 1.0 — 1.0 — 1.0 — 1.0 — 1.0 — ns 1.3 0.2 6.5 — 3.0 — — — 6.5 — 1.3 0.3 6.5 — 3.0 — — — 6.5 — 1.4 0.4 6.5 — 3.0 — — — 6.5 — 1.5 0.5 7.0 — 3.0 — — — 7.0 — 1.5 0.5 7.5 — 3.0 — — — 7.5 — 1.5 0.5 8.5 — 3.0 — — — 8.5 — ns ns ns ns ns tLZ1 tS tH tKH tKL 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns 1.5 0.5 1.3 1.5 — — — — 1.5 0.5 1.3 1.5 — — — — 1.5 0.5 1.3 1.5 — — — — 1.5 0.5 1.3 1.5 — — — — 1.5 0.5 1.5 1.7 — — — — 1.5 0.5 1.7 2 — — — — ns ns ns ns tHZ1 1.0 2.3 1.0 2.5 1.0 2.7 1.0 2.9 1.0 3.0 1.0 3.0 ns tOE — 2.3 — 2.5 — 2.7 — 2.9 — 3.3 — 3.5 ns G to output in Low-Z tOLZ1 0 — 0 — 0 — 0 — 0 — 0 — ns G to output in High-Z tOHZ1 Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid ns ns ns — 2.3 — 2.5 — 2.7 — 2.9 — 3.0 — 3.0 ns ZZ setup time tZZS 2 5 — 5 — 5 — 5 — 5 — 5 — ns ZZ hold time tZZH2 tZZR 1 — 1 — 1 — 1 — 1 — 1 — ns 20 — 20 — 20 — 20 — 20 — 20 — ns ZZ recovery Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.05 6/2006 16/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Pipeline Mode Timing (NBT) Write A Read B Suspend Read C tKH Write D writeno-op Read E Deselect tKC tKL CK tH tS A A B C D E tH tS CKE tH tS E* tH tS ADV tH tS W tH tH tS tS Bn tH tLZ tKQ tS DQ Rev: 1.05 6/2006 D(A) Q(B) Q(C) D(D) 17/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. tHZ tKQX Q(E) © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Flow Through Mode Timing (NBT) Write A Write B Write B+1 Read C Cont Read D Write E Read F Write G tKL tKH tKC CK tH tS CKE tH tS E tH tS ADV tH tS W tH tS Bn tH tS A0–An A B C D E F G tKQ tH tKQ tLZ tS D(A) DQ D(B) D(B+1) tKQX tHZ Q(C) Q(D) tLZ D(E) tKQX Q(F) D(G) tOLZ tOE tOHZ G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 JTAG Port Operation Overview The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output drivers are powered by VDDQ. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected. Rev: 1.05 6/2006 18/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV JTAG Pin Descriptions Pin Pin Name I/O Description TCK Test Clock In Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS Test Mode Select In The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. In The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level. TDI Test Data In TDO Test Data Out Output that is active depending on the state of the TAP state machine. Output changes in Out response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. JTAG Port Registers Overview The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM’s JTAG Port to another device in the scan chain with as little delay as possible. Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register. Rev: 1.05 6/2006 19/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV JTAG TAP Block Diagram · · · · · · · · Boundary Scan Register · · 1 · 108 0 0 Bypass Register 2 1 0 Instruction Register TDI TDO ID Code Register 31 30 29 · · · · 2 1 0 Control Signals TMS Test Access Port (TAP) Controller TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. GSI Technology JEDEC Vendor ID Code Not Used Bit # Presence Register ID Register Contents 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 X 1 X Rev: 1.05 6/2006 X X X X X X X X X X X X X X X X X X 0 20/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 0 0 1 1 0 1 1 0 0 1 © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load address, data or control signals into the RAM or to preload the I/O buffers. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table. JTAG Tap Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR 1 Select IR 0 0 1 1 Capture DR Capture IR 0 0 Shift DR 1 1 Shift IR 0 1 1 Exit1 DR 0 Exit1 IR 0 0 Pause DR 1 Exit2 DR 1 Update DR 1 1 0 0 Pause IR 1 Exit2 IR 0 1 0 0 Update IR 1 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Rev: 1.05 6/2006 21/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is still determined by its input pins. Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction. Rev: 1.05 6/2006 22/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV JTAG TAP Instruction Set Summary Instruction Code Description Notes EXTEST 000 Places the Boundary Scan Register between TDI and TDO. 1 IDCODE 001 Preloads ID Register and places it between TDI and TDO. 1, 2 SAMPLE-Z 010 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. 1 RFU 011 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 SAMPLE/ PRELOAD 100 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. 1 GSI 101 GSI private instruction. 1 RFU 110 Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. 1 BYPASS 111 Places Bypass Register between TDI and TDO. 1 Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state. Rev: 1.05 6/2006 23/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version) Parameter Symbol Min. Max. Unit Notes 1.8 V Test Port Input Low Voltage VILJ1 –0.3 0.3 * VDD1 V 1 2.5 V Test Port Input Low Voltage VILJ2 –0.3 0.3 * VDD2 V 1 1.8 V Test Port Input High Voltage VIHJ1 0.6 * VDD1 VDD1 +0.3 V 1 2.5 V Test Port Input High Voltage VIHJ2 0.6 * VDD2 VDD2 +0.3 V 1 TMS, TCK and TDI Input Leakage Current IINHJ –300 1 uA 2 TMS, TCK and TDI Input Leakage Current IINLJ –1 100 uA 3 TDO Output Leakage Current IOLJ –1 1 uA 4 Test Port Output High Voltage VOHJ 1.7 — V 5, 6 Test Port Output Low Voltage VOLJ — 0.4 V 5, 7 Test Port Output CMOS High VOHJC VDDQ – 100 mV — V 5, 8 Test Port Output CMOS Low VOLJC — 100 mV V 5, 9 Notes: 1. Input Under/overshoot voltage must be –2 V < Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC. 2. VILJ ≤ VIN ≤ VDDn 3. 0 V ≤ VIN ≤ VILJn 4. Output Disable, VOUT = 0 to VDDn 5. The TDO output driver is served by the VDDQ supply. 6. IOHJ = –4 mA 7. IOLJ = + 4 mA 8. IOHJC = –100 uA 9. IOLJC = +100 uA JTAG Port AC Test Conditions Parameter Conditions Input high level VDD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level VDDQ/2 Output reference level VDDQ/2 JTAG Port AC Test Load DQ 50Ω 30pF* VDDQ/2 * Distributed Test Jig Capacitance Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted. Rev: 1.05 6/2006 24/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV JTAG Port Timing Diagram tTKC tTKH tTKL TCK tTH tTS TDI tTH tTS TMS tTKQ TDO tTH tTS Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol Min Max Unit TCK Cycle Time tTKC 50 — ns TCK Low to TDO Valid tTKQ — 20 ns TCK High Pulse Width tTKH 20 — ns TCK Low Pulse Width tTKL 20 — ns TDI & TMS Set Up Time tTS 10 — ns TDI & TMS Hold Time tTH 10 — ns Boundary Scan (BSDL Files) For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications Engineering Department at: [email protected]. Rev: 1.05 6/2006 25/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Rev: 1.05 6/2006 26/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Package Dimensions—165-Bump FPBGA (Package E) A1 CORNER TOP VIEW BOTTOM VIEW Ø0.10 M C Ø0.25 M C A B Ø0.40~0.60 (165x) 1 2 3 4 5 6 7 8 9 10 11 A1 CORNER 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R 1.0 14.0 17±0.05 1.0 A B C D E F G H J K L M N P R A 1.0 1.0 10.0 0.20 C B Rev: 1.05 6/2006 SEATING PLANE 0.20(4x) 0.36~0.46 1.50 MAX. C 15±0.05 27/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Ordering Information for GSI NBT SRAMs Org Part Number1 Type Voltage Option Package Speed2 (MHz/ns) 4M x 18 GS8644Z18E-250 NBT MCM 1.8 V or 2.5 V 165 BGA 250/6.5 C PQ 4M x 18 GS8644Z18E-225 NBT MCM 1.8 V or 2.5 V 165 BGA 225/6.5 C PQ 4M x 18 GS8644Z18E-200 NBT MCM 1.8 V or 2.5 V 165 BGA 200/6.5 C PQ 4M x 18 GS8644Z18E-166 NBT MCM 1.8 V or 2.5 V 165 BGA 166/8 C PQ 4M x 18 GS8644Z18E-150 NBT MCM 1.8 V or 2.5 V 165 BGA 150/8.5 C PQ 4M x 18 GS8644Z18E-133 NBT MCM 1.8 V or 2.5 V 165 BGA 133/8.5 C PQ 2M x 36 GS8644Z36E-250 NBT MCM 1.8 V or 2.5 V 165 BGA 250/6.5 C PQ 2M x 36 GS8644Z36E-225 NBT MCM 1.8 V or 2.5 V 165 BGA 225/6.5 C PQ 2M x 36 GS8644Z36E-200 NBT MCM 1.8 V or 2.5 V 165 BGA 200/6.5 C PQ 2M x 36 GS8644Z36E-166 NBT MCM 1.8 V or 2.5 V 165 BGA 166/8 C PQ 2M x 36 GS8644Z36E-150 NBT MCM 1.8 V or 2.5 V 165 BGA 150/8.5 C PQ 2M x 36 GS8644Z36E-133 NBT MCM 1.8 V or 2.5 V 165 BGA 133/8.5 C PQ 4M x 18 GS8644Z18E-250I NBT MCM 1.8 V or 2.5 V 165 BGA 250/6.5 I PQ 4M x 18 GS8644Z18E-225I NBT MCM 1.8 V or 2.5 V 165 BGA 225/6.5 I PQ 4M x 18 GS8644Z18E-200I NBT MCM 1.8 V or 2.5 V 165 BGA 200/6.5 I PQ 4M x 18 GS8644Z18E-166I NBT MCM 1.8 V or 2.5 V 165 BGA 166/8 I PQ 4M x 18 GS8644Z18E-150I NBT MCM 1.8 V or 2.5 V 165 BGA 150/8.5 I PQ 4M x 18 GS8644Z18E-133I NBT MCM 1.8 V or 2.5 V 165 BGA 133/8.5 I PQ 2M x 36 GS8644Z36E-250I NBT MCM 1.8 V or 2.5 V 165 BGA 250/6.5 I PQ 2M x 36 GS8644Z36E-225I NBT MCM 1.8 V or 2.5 V 165 BGA 225/6.5 I PQ 2M x 36 GS8644Z36E-200I NBT MCM 1.8 V or 2.5 V 165 BGA 200/6.5 I PQ 2M x 36 GS8644Z36E-166I NBT MCM 1.8 V or 2.5 V 165 BGA 166/8 I PQ 2M x 36 GS8644Z36E-150I NBT MCM 1.8 V or 2.5 V 165 BGA 150/8.5 I PQ 2M x 36 GS8644Z36E-133I NBT MCM 1.8 V or 2.5 V 165 BGA 133/8.5 I PQ TA3 Status4 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8644Z18B-150IB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.05 6/2006 28/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV Ordering Information for GSI NBT SRAMs (Continued) Org Part Number1 Type Voltage Option Package Speed2 (MHz/ns) 4M x 18 GS8644Z18E-250 NBT MCM 1.8 V or 2.5 V 165 BGA 250/6.5 C PQ 4M x 18 GS8644Z18E-225V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 225/6.5 C PQ 4M x 18 GS8644Z18E-200V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 C PQ 4M x 18 GS8644Z18E-166V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 166/8 C PQ 4M x 18 GS8644Z18E-150V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/8.5 C PQ 4M x 18 GS8644Z18E-133V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 133/8.5 C PQ 2M x 36 GS8644Z36E-250V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/6.5 C PQ 2M x 36 GS8644Z36E-225V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 225/6.5 C PQ 2M x 36 GS8644Z36E-200V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 C PQ 2M x 36 GS8644Z36E-166V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 166/8 C PQ 2M x 36 GS8644Z36E-150V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/8.5 C PQ 2M x 36 GS8644Z36E-133V NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 133/8.5 C PQ 4M x 18 GS8644Z18E-250IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/6.5 I PQ 4M x 18 GS8644Z18E-225IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 225/6.5 I PQ 4M x 18 GS8644Z18E-200IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 I PQ 4M x 18 GS8644Z18E-166IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 166/8 I PQ 4M x 18 GS8644Z18E-150IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/8.5 I PQ 4M x 18 GS8644Z18E-133IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 133/8.5 I PQ 2M x 36 GS8644Z36E-250IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 250/6.5 I PQ 2M x 36 GS8644Z36E-225IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 225/6.5 I PQ 2M x 36 GS8644Z36E-200IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 200/6.5 I PQ 2M x 36 GS8644Z36E-166IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 166/8 I PQ 2M x 36 GS8644Z36E-150IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 150/8.5 I PQ 2M x 36 GS8644Z36E-133IV NBT MCM 1.8 V or 2.5 V RoHS-compliant 165 BGA 133/8.5 I PQ TA3 Status4 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8644Z18B-150IB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.05 6/2006 29/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology Preliminary GS8644Z18/36E-xxxV 72Mb Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; New Types of Changes Page;Revisions;Reason Format or Content • Creation of new datasheet 8644ZVxx_r1 Content • Updated Operating Currents table • Updated FT AC Characteristics for tKQ 8644ZVxx_r1_01; 8644ZVxx_r1_02 Content • Updated FT tKQ and PL tS/tH and FT current numbers for 250 and 225 MHz (match 200 MHz) • Updated basic format • Updated Synchronous Truth Table • Added thermal characteristics to mechanical drawings • Updated JTAG section for module 8644ZVxx_r1_02; 8644ZVxx_r1_03 Format/Content 8644ZVxx_r1_03; 8644ZVxx_r1_04 Content 8644ZVxx_r1_04; 8644Zxx_V_r1_05 Content 8644ZVxx_r1; 8644ZVxx_r1_01 Rev: 1.05 6/2006 • Updated format • Added variation information to package mechanicals • Corrected 165 mechanical drawing • Updated entire document to reflect new part nomenclature • Removed all 119 and 209 BGA references • Added RoHS-compliant information 30/30 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2003, GSI Technology