SANYO TND323VD

TND323VD
Ordering number : ENA0666
SANYO Semiconductors
DATA SHEET
ExPD (Excellent Power Device)
TND323VD
General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,
Switching Power Supply, and DC / DC Converter Applications
Features
•
•
•
•
•
•
•
•
Inverter buffer.
Monolithic structure (High voltage CMOS process adopted).
Withstand voltage of 25V is assured.
Wide range of operating voltage : 4.5V to 25V.
Peak output current : IO+/IO--=0.8A /1A.
Fast switching time (30ns typical at 1000pF load).
Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
Built-in input pull-down resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Supply Voltage
Symbol
Conditions
Ratings
VDD
Input Voltage
Allowable Power Dissipation
Unit
0 to 25
VIN
PD max
V
GND--0.3 to VDD+0.3
V
0.2
W
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
Recommended Operating Conditions at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Operating Supply Voltage
VDD
4.5 to 25
V
Operating Temperature
Topr
--40 to +125
°C
Marking : DE
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42507IP TI IM TC-00000675 No. A0666-1/5
TND323VD
Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V
Parameter
Symbol
Turn-On Rise Time
Turn-Off Fall Time
Delay Time
Ratings
Conditions
min
typ
Unit
max
tr
tf
CL=1000pF
CL=1000pF
35
50
ns
30
45
ns
tD1
CL=1000pF
CL=1000pF
30
45
ns
45
60
ns
tD2
Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V
Parameter
Symbol
Logic “1” Input Voltage
VIH
Logic “0” Input Voltage
VIL
Logic “1” Input Bias Current
Logic “0” Input Bias Current
IIN+
IIN--
High Level Output Voltage
VOH
Low Level Output Voltage
VOL
VDD Supply Current
Isupp
Output High Short Circuit Pulse Current
IO+
IO--
Output Low Short Circuit Pulse Current
Output On Resistance
ROUT
Ratings
Conditions
min
typ
Unit
max
2.6
VIN=VDD=25V
V
40
VIN=0V
--1
IO=0A
IO=0A
0.8
V
100
µA
1
µA
VDD--0.1
V
VDD=10V, VIN=3V, (both inputs)
1.0
VDD=10V, VIN=0V, (both inputs)
VDD=18V, PW≤10µs, VOUT=0V
0.8
VDD=18V, PW≤10µs, VOUT=18V
1.0
0.1
V
4.5
mA
0.2
mA
A
A
VDD=18V, Iload=10mA, VOUT=“H”
11
16.5
Ω
VDD=18V, Iload=10mA, VOUT=“L”
6
10
Ω
Package Dimensions
0.3
7
0.15
6 5
2.3
8
0.25
2.8
0.25
unit : mm (typ)
7012-006
1
2
3
4
0.65
0.07
0.75
2.9
1 : INA
2 : OUTA
3 : OUTB
4 : INB
5 : GND
6 : VDD
7 : VDD
8 : VDD
SANYO : VEC8
Block Diagram
VDD
IN
INVERTING
OUT
NON-INVERTING
GND
No. A0666-2/5
TND323VD
Switching Time Test Circuit
VDD=18V
4.7µF
0.1µF
TND323VD
INPUT A
OUTPUT A
1000pF
INPUT B
OUTPUT B
1000pF
INPUT RISE
AND FALL
TIMES=5ns
INPUT
+5V
+0.4V
90%
10%
tD1
+18V
INVERTING
OUTPUT
tD2
90%
90%
10%
0V
10%
tf
tr
tD1
tD2
+18V
NONINVERTING
OUTPUT
0V
90%
90%
10%
10%
tr
tf
tr -- Tc
60
40
30
20
10
0
--50
40
35
30
25
20
0
50
100
Case Temperature, Tc -- °C
15
--50
150
35
30
25
20
100
150
IT05640
VDD=18V
VIN=5V
CL=1000pF
90
80
Delay Time, tD2 -- ns
40
50
tD2 -- Tc
100
VDD=18V
VIN=5V
CL=1000pF
45
0
Case Temperature, Tc -- °C
IT10418
tD1 -- Tc
50
Delay Time, tD1 -- ns
VDD=18V
VIN=5V
CL=1000pF
45
Turn-Off Fall Time, tf -- ns
Turn-On Rise Time, tr -- ns
50
tf -- Tc
50
VDD=18V
VIN=5V
CL=1000pF
70
60
50
40
30
20
15
10
--50
10
0
50
100
Case Temperature, Tc -- °C
150
IT05632
0
--50
0
50
100
Case Temperature, Tc -- °C
150
IT05644
No. A0666-3/5
TND323VD
IO(+) -- Tc
VDD=18V
1.0
0.8
0.6
IO(--) -- Tc
1.4
Output "Low" Short Circuit
Pulse Current, IO(--) -- A
Output "High" Short Circuit
Pulse Current, IO(+) -- A
1.2
VDD=18V
1.2
1.0
0.8
0.6
0.4
--50
0
50
100
0.4
--50
150
Case Temperature, Tc -- °C
50
100
IT10420
IO(--) -- VDD
1.6
VIN=5V
VIN=5V
1.4
Output "Low" Short Circuit
Pulse Current, IO(--) -- A
1.4
Output "High" Short Circuit
Pulse Current, IO(+) -- A
150
Case Temperature, Tc -- °C
IO(+) -- VDD
1.6
0
IT10419
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
5
10
15
20
25
Supply Voltage, VDD -- V
30
0
10
15
20
30
IT11994
tf -- VDD
60
VIN=5V
CL=1000pF
70
25
Supply Voltage, VDD -- V
tr -- VDD
80
5
IT11993
VIN=5V
CL=1000pF
Turn-Off Fall Time, tf -- ns
Turn-On Rise Time, tr -- ns
50
60
50
40
30
20
40
30
20
10
10
0
0
0
5
10
15
20
25
Supply Voltage, VDD -- V
30
0
10
15
20
25
Supply Voltage, VDD -- V
tD1 -- VDD
60
5
IT11995
tD2 -- VDD
160
VIN=5V
CL=1000pF
30
IT11996
VIN=5V
CL=1000pF
140
Delay Time, tD2 -- ns
Delay Time, tD1 -- ns
50
40
30
20
120
100
80
60
40
10
20
0
0
0
5
10
15
20
Supply Voltage, VDD -- V
25
30
IT11997
0
5
10
15
20
Supply Voltage, VDD -- V
25
30
IT11998
No. A0666-4/5
TND323VD
PD -- Ta
Allowable Power Dissipation, PD -- W
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11999
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0666-5/5