SEMIKRON SEMIX653GAR176HD

SEMiX 653GB176HD ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
.
.34
6
8, )* +, #
)* 0( +
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Units
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1*( 21(
5((
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< 2( === > '*( ')*
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+
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*(( @2(
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"
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Inverse diode
SEMiX® 3
Trench IGBT Modules
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)* 0( +
' .?4
'( A =A 8 '*( +
Characteristics
Symbol Conditions
IGBT
SEMiX 653GB176HD
SEMiX 653GAL176HD
SEMiX 653GAR176HD
Preliminary Data
Features
!
Typical Applications
" #
$%
#
Remarks
! # &
'((( # &
')((
)* +, #
min.
typ.
max.
Units
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8 )* ')* +
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8 )* ')* +, Inverse diode
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B
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[email protected]
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Thermal characteristics
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38<M
38<?M
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.
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KFL
KFL
KFL
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Temperature sensor
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Mechanical data
4F4
O 4* F 41
GB
1
GAL
@F),*
* F*
)05
:
GAR
18-04-2006 GES
© by SEMIKRON
SEMiX 653GB176HD ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
18-04-2006 GES
© by SEMIKRON
SEMiX 653GB176HD ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 Typ. CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
18-04-2006 GES
© by SEMIKRON
SEMiX 653GB176HD ...
Fig. 13 Typ. CAL diode recovered charge
6J
%
4T @
4T @
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
18-04-2006 GES
© by SEMIKRON