SK 100 WT '203 '223* '23 52306 $&$ 7 ' :&& $-&& ' 8&& $/&& 1 6 8. 9 0; $&& <1 &8 0; $&& <1 $/ $=&& $%&& 0; $&& <1 $% Characteristics Symbol Conditions SEMITOP® 3 Thyristor Values Units 5 7 517'>5?7' 7 5230 <$@ $8&9@ 1 6 8. $&&9 $&$ =$ 7 5103>5?03 1!A 6 /. $/. 9@ $& $.&& $-.& 7 5B 1!A 6 /. $/. 9@ 8*- +++ $& $$/.& :$&& 7B CD&+++ E$/. 9 /%& 9 1 1 SK 100 WT 1 6 /.9 # * $& Thyristor Target Data Features ! " # $%&&' ! ! #( )* + , %- .-/ Typical Applications 0 ( * +++ 1 !> > G 5 1!A 6 $/. 9 1!A 6 $/. 9@ 6 6 .&+++%& ) 1!A 6 $/. 9@ "+ 1!A 6 /. 9@ "+ > + $&&& $&& 8& $&& > /&& '>F 7>F F 7 5( 1!A 6 /. 9@ 2 6 -- H@ "+ > + /&& > .&& 7 '1 '11 1 5@ 52 2AC 1!A ' 1 5 1 ' 1!A 6 /. 9@ 51 6 /&& 7@ + 1!A 6 $/. 9 1!A 6 $/. 9 1!A 6 $/. 9@ ' 6 '23@ '2 6 '223 " 1!A 6 /. 9@ + + 1!A 6 /. 9@ + + 1!A 6 $/. 9@ + + $*8 + &*: + D*. + /& &*% C D& +++ E $/. / $&& &*/. ' ' H 7 ;>< 9 ' 7 ' 5 1!A 6 $/. 9@ + + . 7 Diode '? '1 1 1!A 6 9@ 5? 6 7@ + 1!A 6 9 1!A 6 9 ' ' H 52 1!A 6 9@ '2 6 '223 7 2AC ;>< 1!A 9 Mechanical data ' 3$ + + .& )@ +++@ $ > $ G 0,351JK - -&&& /.&& /*. ' I -& 1 %- WT 1 10-01-2006 RAM © by SEMIKRON SK 100 WT Fig.1 Power dissipation per phase vs. r.m.s current Fig.2 Transient thermal impedance vs. time Fig.3 On-state characteristics Fig.4 Surge overload current vs. time 2 10-01-2006 RAM © by SEMIKRON SK 100 WT Row 1 Row 2 Dimensions in mm 0# ,01, (,573,1,2 ?2 1, 0(,2 J5I0 7I 1, 3#I15I J5I0 5I 1, JL / 1%- 0 J L / 1%- This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 10-01-2006 RAM © by SEMIKRON