SEMIKRON SKD116/16-L100

SKD 116/..L100
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Absolute Maximum Ratings
Symbol Conditions
Bridge - Rectifier
SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
Values
Units
3
3=129312
4 6- 7< & 4 "$ < "6$7 <>
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5
5
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4 "$ < "6$7 <>
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5?
IGBT - Chopper
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3
4 .- ;$ 7
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%
5
32
4 " < 4 .- ;$ 7
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5
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",$ A$
%
5
Freewheeling - CAL Diode
SKD 116/..L100
Preliminary Data
Features
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Typical Applications
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4 .- 7) / %002
3=
4 .- ;$ 7
3=2
4 " < 4 .- ;$ 7
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5
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7
7
7
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) "$ Characteristics
Symbol Conditions
Diode - Rectifier
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4 .- 7) min.
typ.
max.
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Units
% 9 F
"
89G
IGBT - Chopper
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0>:
3 4 "$$ 5) > 4 .- 7<
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3@
9 & &H
9 % 4 #$$ %< %@+ 4 "- %<
3 4 ".$ 5< > 4 ".- 7<
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%
$),
> 4 ".- 7< 0@ 4 "# I<
89G
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6B-)B
AB)B 9 6B-)B
.B)B
J
& CAL - Diode - Freewheeling
%E 9 > 4 ".- 7
0>:
3002
K
& &H
3= 4 "$$ 5< %0 4 : :#$$ %<
3=9 4 : :"$$$ 59L
+
"96
"). 9 ""
% 9 F
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89G
#"-
5
L
%@+ 4 $ %< > 4 ".- 7
J
Temperature Sensor
01
4 .- "$$ 7<
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F
Mechanical data
21
M
.)--
,)B-
N
D
1
05-09-2007 DIL
© by SEMIKRON
SKD 116/..L100
Fig. 1 Power dissipation per module vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode
Fig. 4 Temperature sensor characteristic
Fig. 5 Typ. gate charge characteristic
2
Fig. 6 Output IGBT characteristics Ic=f(Vce), Tj=25°C
05-09-2007 DIL
© by SEMIKRON
SKD 116/..L100
Fig. 7 Output IGBT characteristics Ic=f(Vce), Tj=125°C
Fig. 8 Turn-on/-off energy=f(Ic)
Fig. 9 Turn-on/-off energy=f(Rg)
3
Fig. 10 Diode forward characteristic
05-09-2007 DIL
© by SEMIKRON
SKD 116/..L100
UL recognized
File n&#176; E63 532
Dimensions in mm
@ #$
@ #$
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
05-09-2007 DIL
© by SEMIKRON