SEMIKRON SKDH116/16-L100

SKDH 116/.. -L100
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Absolute Maximum Ratings
Symbol Conditions
Bridge - Rectifier
SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
SKDH 116/.. -L100
Preliminary Data
Features
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Typical Applications
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Units
3
3=129312
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5
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IGBT - Chopper
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3
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5
32
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5
Freewheeling - CAL Diode
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3=2
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) "$ Characteristics
Symbol Conditions
Diode - Rectifier
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typ.
max.
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Units
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89G
Thyristor - Rectifier
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3B
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393'
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> 4 .- 7
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89G
5
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IGBT - Chopper
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> 4 ".- 7< 0B 4 "# J<
89G
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.A)A
K
& CAL - Diode - Freewheeling
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3002
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K
Temperature Sensor
01
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Mechanical data
21
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N
DH
1
18-10-2007 DIL
© by SEMIKRON
SKDH 116/.. -L100
Fig. 1 Power dissipation per module vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode
Fig. 4 Forward characteristic of single thyristor
Fig. 5 Temperature sensor characteristic
Fig. 6 Typ gate charge characteristic
2
18-10-2007 DIL
© by SEMIKRON
SKDH 116/.. -L100
Fig.7 Output Igbt characteristic Ic=f(Vce) Tj=25°C
Fig. 9 Turn-on/-off energy=f(Ic)
Fig. 11 Gate trigger characteristic of a single thyristor
3
Fig. 8 Output Igbt characteristic Ic=f(Vce) Tj=125°C
Fig. 10 turn-on/-off energy=f(Rg)
Fig. 12 Freewheeling diode forward characteristic
18-10-2007 DIL
© by SEMIKRON
SKDH 116/.. -L100
UL recognized
File n&#176; E63 532
Dimensions in mm
B -?
B -?
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
18-10-2007 DIL
© by SEMIKRON