MICROCHIP MCP111

MCP111/112
Micropower Voltage Detector
Package Types
• Ultra-low supply current: 1.75 µA (max.)
• Precision monitoring options of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
• Resets microcontroller in a power-loss event
• Active-low VOUT pin:
- MCP111 active-low, open-drain
- MCP112 active-low, push-pull
• Available in SOT23-3, TO-92, SC-70 and
SOT-89-3 packages
• Temperature Range:
- Extended: -40°C to +125°C
(except MCP1XX-195)
- Industrial: -40°C to +85°C (MCP1XX-195 only)
• Pb-free devices
3-Pin SOT23-3/SC-70
VOUT 1
VSS 2
3-Pin SOT-89
VDD
MCP111/112
Features
3 VDD
MCP111/112
1
2
3
VOUT VDD VSS
3-Pin TO-92
VOUT
VDD VSS
Applications
• Critical Microcontroller and Microprocessor
Power-Monitoring Applications
• Computers
• Intelligent Instruments
• Portable Battery-Powered Equipment
Block Diagram
VDD
Comparator
+
Description
–
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltages are
available.
TABLE 1:
VOUT
Band Gap
Reference
VSS
DEVICE FEATURES
Output
Device
Type
MCP111
Output
Driver
Open-drain
Pull-up Resistor
External
Reset Delay
(typ)
No
Package Pin Out
(Pin # 1, 2, 3)
Comment
VOUT, VSS, VDD
MCP112
Push-pull
No
No
VOUT, VSS, VDD
MCP102
Push-pull
No
120 ms
RST, VDD, VSS
See MCP102/103/121/131 Data Sheet
(DS21906)
MCP103
Push-pull
No
120 ms
VSS, RST, VDD
See MCP102/103/121/131 Data Sheet
(DS21906)
MCP121
Open-drain
External
120 ms
RST, VDD, VSS
See MCP102/103/121/131 Data Sheet
(DS21906)
MCP131
Open-Drain
Internal (~95 k)
120 ms
RST, VDD, VSS
See MCP102/103/121/131 Data Sheet
(DS21906)
 2004-2013 Microchip Technology Inc.
DS21889E-page 1
MCP111/112
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings†
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of VDD . . . . . . . . . . . . . . . . . . . . . . 100V/µs
All inputs and outputs (except RST) w.r.t. VSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (VDD + 1.0V)
RST output w.r.t. VSS . . . . . . . . . . . . . . . . . . . -0.6V to 13.5V
Storage temperature . . . . . . . . . . . . . . . . . . . 65°C to + 150°C
Ambient temp. with power applied . . . . . . . -40°C to + 125°C
Maximum Junction temp. with power applied . . . . . . . . 150°C
ESD protection on all pins 2 kV
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111),
TA = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
5.5
V
Conditions
Operating Voltage Range
VDD
1.0
—
Specified VDD Value to VOUT low
VDD
1.0
—
Operating Current
IDD
—
<1
1.75
µA
VTRIP
1.872
1.900
1.929
V
1.853
1.900
1.948
V
TA = -40°C to +85°C (Note 2)
2.285
2.320
2.355
V
TA = +25°C (Note 1)
2.262
2.320
2.378
V
Note 2
2.591
2.630
2.670
V
TA = +25°C (Note 1)
2.564
2.630
2.696
V
Note 2
2.857
2.900
2.944
V
TA = +25°C (Note 1)
2.828
2.900
2.973
V
Note 2
2.886
2.930
2.974
V
TA = +25°C (Note 1)
2.857
2.930
3.003
V
Note 2
3.034
3.080
3.126
V
TA = +25°C (Note 1)
3.003
3.080
3.157
V
Note 2
4.314
4.380
4.446
V
TA = +25°C (Note 1)
4.271
4.380
4.490
V
Note 2
4.561
4.630
4.700
V
TA = +25°C (Note 1)
4.514
4.630
4.746
V
Note 2
—
±100
—
ppm/°
C
VDD Trip Point
MCP1XX-195
MCP1XX-240
MCP1XX-270
MCP1XX-290
MCP1XX-300
MCP1XX-315
MCP1XX-450
MCP1XX-475
VDD Trip Point Tempco
Note 1:
2:
3:
4:
TTPCO
V
I RST = 10 µA, V RST < 0.2V
TA = +25°C (Note 1)
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
This parameter is established by characterization and is not 100% tested.
DS21889E-page 2
 2004-2013 Microchip Technology Inc.
MCP111/112
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111),
TA = -40°C to +125°C.
Parameters
Threshold Hysteresis
min. = 1%, max = 6%)
MCP1XX-195
Sym
Min
Typ
VHYS
Max
Units
0.019
—
0.114
V
MCP1XX-240
0.023
—
0.139
V
MCP1XX-270
0.026
—
0.158
V
MCP1XX-290
0.029
—
0.174
V
MCP1XX-300
0.029
—
0.176
V
MCP1XX-315
0.031
—
0.185
V
MCP1XX-450
0.044
—
0.263
V
MCP1XX-475
0.046
—
0.278
V
Conditions
TA = +25°C
VOUT Low-level Output Voltage
VOL
—
—
0.4
V
IOL = 500 µA, VDD = VTRIP(MIN)
VOUT High-level Output Voltage
VOH
VDD – 0.6
—
—
V
IOH = 1 mA, For only MCP112
(push-pull output)
Open-drain High Voltage on Output
VODH
—
—
13.5 (3)
V
MCP111 only,
VDD = 3.0V, Time voltage >
5.5V applied  100s,
current into pin limited to
2 mA, +25°C operation
recommended
Note 3, Note 4
Open-drain Output Leakage Current
(MCP111 only)
IOD
—
0.1
—
µA
Note 1:
2:
3:
4:
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
This parameter is established by characterization and is not 100% tested.
 2004-2013 Microchip Technology Inc.
DS21889E-page 3
MCP111/112
VTRIP
1V
VDD
tRPU
tRPD
VOH
1V
VOL
VOUT
tRT
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(only MCP111), TA = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
VDD Detect to VOUT Inactive
tRPU
—
90
—
µs
Figure 1-1 and CL = 50 pF
(Note 1)
VDD Detect to VOUT Active
tRPD
—
130
—
µs
VDD ramped from VTRIP(MAX) +
250 mV down to VTRIP(MIN) –
250 mV, per Figure 1-1,
CL = 50 pF (Note 1)
tRT
—
5
—
µs
For VOUT 10% to 90% of final
value per Figure 1-1, CL = 50 pF
(Note 1)
VOUT Rise Time After VOUT Active
Note 1:
Conditions
These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(only MCP111), TA = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Specified Temperature Range
TA
-40
—
+85
°C
MCP1XX-195
Specified Temperature Range
TA
-40
—
+125
°C
Except MCP1XX-195
Temperature Ranges
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 3L-SOT23
JA
—
336
—
°C/W
Thermal Resistance, 3L-SC-70
JA
—
340
—
°C/W
Thermal Resistance, 3L-TO-92
JA
—
131.9
—
°C/W
Thermal Resistance, 3L-SOT-89
JA
—
110
—
°C/W
Package Thermal Resistances
DS21889E-page 4
 2004-2013 Microchip Technology Inc.
MCP111/112
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
1.6
1.6
MCP111-195
5.5V
5.0V
1.4
1.2
1.2
4.0V
1
0.8
IDD (uA)
IDD (uA)
MCP111-195
1.4
2.8V
2.1V
1.7V
0.6
0.4
+85°C
0.8
0.6
-40°C
0.4
1.0V
0.2
+125°C
1
+25°C
0.2
0
140
120
100
80
60
40
20
0
-20
-40
0
1.0
2.0
3.0
FIGURE 2-1:
(MCP111-195).
1.2
4.0
5.0
6.0
VDD (V)
Temperature (°C)
FIGURE 2-4:
IDD vs. Temperature
1.6
5.5V
MCP112-300
1
5.0V
0.8
4.0V
0.6
2.8V
1.7V
IDD vs. VDD (MCP111-195).
MCP112-300
1.4
0.4
IDD (uA)
IDD (uA)
1.2
2.1V
1
+125°C
0.8
+85°C
0.6
-40°C
0.4
0.2
1.0V
0.2
0
+25°C
140
120
100
80
60
40
20
0
-20
-40
0
1.0
2.0
3.0
6.0
1.6
MCP112-475
1.4
5.5V
MCP112-475
2.1V
2.8V
1.7V
IDD (uA)
1.2
4.0V
5.0V
1
0.8
+125°C
0.6
+85°C
0.4
-40°C
0.2
1.0V
+25°C
140
120
100
80
60
40
20
0
-20
0
-40
IDD (uA)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5.0
IDD vs. VDD (MCP112-300).
FIGURE 2-5:
IDD vs. Temperature
FIGURE 2-2:
(MCP112-300).
4.0
VDD (V)
Temperature (°C)
1.0
IDD vs. Temperature
 2004-2013 Microchip Technology Inc.
3.0
4.0
5.0
6.0
VDD (V)
Temperature (°C)
FIGURE 2-3:
(MCP112-475).
2.0
FIGURE 2-6:
IDD vs. VDD (MCP112-475).
DS21889E-page 5
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
0.100
MCP111-195
VDD = 1.7V
0.080
VOL (V)
0.050
VTRIP, V increasing
0.045
0.040
VHYS, Hysteresis
0.035
0.030
MCP111-195
0.025
max temp is
0.020
+85°C
0.015
VTRIP, V decreasing
0.010
0.005
0.000
-60
-10
40
90
140
Hyst (V)
VTRIP (V)
0.120
1.950
1.945
1.940
1.935
1.930
1.925
1.920
1.915
1.910
1.905
1.900
1.895
+125°C
0.060
+85°C
0.040
-40°C
0.020
+25°C
0.000
0.00
0.25
Temperature (°C)
0.50
0.75
1.00
IOL (mA)
FIGURE 2-10:
VOL vs. IOL
(MCP111-195 @ VDD = 1.7V).
FIGURE 2-7:
VTRIP and VHYST vs.
Temperature (MCP111-195).
0.080
3.020
VTRIP (V)
3.000
VHYS, Hysteresis
2.980
MCP112-300
2.960
2.940
2.920
VTRIP, V decreasing
2.900
-60
-10
40
90
0.100
0.098
0.096
0.094
0.092
0.090
0.088
0.086
0.084
0.082
140
0.070
MCP112-300
VDD = 2.7V
0.060
VOL (V)
VTRIP, V increasing
Hyst (V)
3.040
0.050
+125°C
0.040
+85°C
0.030
0.020
-40°C
+25°C
0.010
0.000
0.00
0.25
0.050
0.180
VTRIP, V increasing
0.170
0.160
0.150
0.140
MCP112-475
0.130
0.120
20
60
100
0.100
140
Temperature (°C)
FIGURE 2-9:
VTRIP and VHYST vs.
Temperature (MCP112-475).
DS21889E-page 6
1.00
MCP112-475
VDD = 4.4V
+125°C
0.030
0.020
+85°C
-40°C
0.010
+25°C
0.110
VTRIP, V decreasing
-20
0.040
VOL (V)
VHYS, Hysteresis
-60
0.75
FIGURE 2-11:
VOL vs. IOL
(MCP112-300 @ VDD = 2.7V).
Hyst (V)
VTRIP (V)
FIGURE 2-8:
VTRIP and VHYST vs.
Temperature (MCP112-300).
4.800
4.780
4.760
4.740
4.720
4.700
4.680
4.660
4.640
4.620
4.600
4.580
0.50
IOL (mA)
Temperature (°C)
0.000
0.00
0.25
0.50
0.75
1.00
IOL (mA)
FIGURE 2-12:
VOL vs. IOL
(MCP112-475 @ VDD = 4.4V).
 2004-2013 Microchip Technology Inc.
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
0.120
MCP111-195
VDD = 1.7 V
0.100
VOH (V)
IOL = 0.50 mA
0.060
0.040
MCP112-300
VDD = 3.1V
3.100
IOL = 0.75 mA
0.080
VOL (V)
3.150
IOL = 1.00 mA
-40 °C
3.050
+25 °C
3.000
IOL = 0.25 mA
+85 °C
2.950
0.020
IOL = 0.00 mA
+125 °C
0.000
-40
0
40
80
2.900
0.00
120
0.25
Temperature (°C)
0.080
4.820
MCP112-300
VDD = 2.7V
4.800
IOL = 0.50 mA
0.030
VOH (V)
VOL (V)
4.780
IOL = 0.75 mA
0.050
0.040
IOL = 0.25 mA
0.020
0.010
80
-40 °C
4.740
+85 °C
4.700
+125 °C
0.000
40
+25 °C
4.760
4.720
IOL = 0.00 mA
0
4.680
0.00
120
0.25
Temperature (°C)
0.030
IOL = 0.50 mA
0.020
IOL = 0.25 mA
0.010
IOL = 0.00 mA
0.000
40
80
120
Transient Duration (µs)
VOL (V)
IOL = 0.75 mA
0
500
400
1
10
MCP111-195
MCP112-300
300
200
MCP112-475
100
0
0.001
Temperature (°C)
FIGURE 2-15:
VOL vs. Temperature
(MCP112-475 @ VDD = 4.4V).
 2004-2013 Microchip Technology Inc.
1.00
600
0.040
-40
0.75
FIGURE 2-17:
VOH vs. IOH
(MCP112-475 @ VDD = 4.8V).
IOL = 1.00 mA
MCP112-475
VDD = 4.4V
0.50
IOL (mA)
FIGURE 2-14:
VOL vs. Temperature
(MCP112-300 @ VDD = 2.7V).
0.050
1.00
MCP112-475
VDD = 4.8V
IOL = 1.00 mA
0.060
-40
0.75
FIGURE 2-16:
VOH vs. IOH
(MCP112-300 @ VDD = 3.1V).
FIGURE 2-13:
VOL vs. Temperature
(MCP111-195 @ VDD = 1.7V).
0.070
0.50
IOL (mA)
0.01
0.1
VTRIP(min) - VDD
FIGURE 2-18:
(25 °C).
Typical Transient Response
DS21889E-page 7
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
400
350
350
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
200
150
tRPU (µs)
300
250
tRPD (µs)
MCP111-195
MCP111-195
VDD decreasing from:
5V - 1.7V
300
100
200
150
VDD increasing from:
0V - 2.8V
100
VDD decreasing from:
5V - 0V
50
VDD increasing from:
0V - 2.1V
250
50
0
VDD increasing
from: 0V - 5.5V
0
-40
-15
10
35
60
85
-40
110
-15
Temperature (°C)
FIGURE 2-19:
(MCP111-195).
tRPD vs. Temperature
FIGURE 2-22:
(MCP111-195).
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
140
85
110
tRPU vs. Temperature
MCP112-300
100
100
tRPU (µs)
tRPD (µs)
60
VDD increasing from:
0V - 3.1V
120
120
VDD decreasing from:
5V - 2.7V
80
60
VDD increasing from:
0V - 3.3V
80
60
VDD increasing from:
0V - 4.0V
40
40
VDD decreasing from:
5V - 0V
20
0
VDD increasing from:
0V - 5.5V
0
-40
-15
10
35
60
85
110
-40
-15
Temperature (°C)
FIGURE 2-20:
(MCP112-300).
tRPD vs. Temperature
FIGURE 2-23:
(MCP112-300).
250
10
35
60
Temperature (°C)
85
110
tRPU vs. Temperature
250
MCP112-475
MCP112-475
VDD increasing from:
0V - 4.9V
200
tRPU (µs)
VDD decreasing from:
5V - 4.4V
200
tRPD (µs)
35
140
MCP112-300
150
100
10
Temperature (°C)
160
20
VDD increasing
from: 0V - 4.0V
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
150
VDD increasing from:
0V - 5.0V
100
VDD increasing from:
0V - 5.5V
50
50
VDD decreasing from:
5V - 0V
0
0
-40
-15
FIGURE 2-21:
(MCP112-475).
DS21889E-page 8
10
35
60
Temperature (°C)
85
110
tRPD vs. Temperature
-40
-15
10
35
60
85
110
Temperature (°C)
FIGURE 2-24:
(MCP112-475).
tRPU vs. Temperature
 2004-2013 Microchip Technology Inc.
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
0.1500
60
55
0.1400
VDD increasing from:
0V - 2.1V
45
VDD increasing from:
0V - 5.5V
40
VDD increasing
from: 0V - 4.0V
35
0.1200
VDD increasing from:
0V - 4.9V
0.1100
0.1000
30
VDD increasing from:
0V - 2.8V
25
VDD increasing from:
0V - 5.5V
0.0900
20
VDD increasing from:
0V - 4.8V
0.0800
-40
-15
10
35
60
85
110
-40
-15
10
Temperature (°C)
0.4
0.35
0.3
FIGURE 2-27:
(MCP112-475).
tRT vs. Temperature
VDD increasing from:
0V - 3.1V
VDD increasing from:
0V - 3.3V
0.25
0.2
VDD increasing from:
0V - 5.5V
0.15
VDD increasing from:
0V - 4.0V
0.1
0.05
MCP112-300
0
-40
-15
10
35
60
85
Temperature (°C)
FIGURE 2-26:
(MCP112-300).
tRT vs. Temperature
 2004-2013 Microchip Technology Inc.
35
60
85
110
Temperature (°C)
110
tRT vs. Temperature
1.E-02
10m
1.E-03
1m
1.E-04
100µ
1.E-05
10µ
1.E-06
1µ
1.E-07
100n
1.E-08
10n
1.E-09
1n
1.E-10
100p
1.E-11
10p
1.E-12
1p
1.E-13
100f
Open-Drain Leakage (A)
FIGURE 2-25:
(MCP111-195).
tRT (µs)
VDD increasing from:
0V - 5.0V
0.1300
tRT (µs)
50
tRT (µs)
MCP112-475
MCP111-195
125°C
25°C
- 40°C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
Pull-Up Voltage (V)
FIGURE 2-28:
Open-Drain Leakage
Current vs. Voltage Applied to VOUT Pin
(MCP111-195).
DS21889E-page 9
MCP111/112
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
Symbol
SOT-23-3
SC-70
SOT-89-3
T0-92
1
1
1
VOUT
Function
Output State
VDD Falling:
H = VDD > VTRIP
L = VDD < VTRIP
VDD Rising:
H = VDD > VTRIP + VHYS
L = VDD < VTRIP + VHYS
2
2
3
—
DS21889E-page 10
3
VSS
Ground reference
3
2
VDD
Positive power supply
4
—
VDD
Positive power supply
 2004-2013 Microchip Technology Inc.
MCP111/112
4.0
APPLICATION INFORMATION
4.1
For many of today’s microcontroller applications, care
must be taken to prevent low-power conditions that can
cause many different system problems. The most
common causes are brown-out conditions, where the
system supply drops below the operating level momentarily. The second most common cause is when a slowly
decaying power supply causes the microcontroller to
begin executing instructions without sufficient voltage to
sustain SRAM, thus producing indeterminate results.
Figure 4-1 shows a typical application circuit.
VDD
3
0.1
µF
VTRIP Operation
The voltage trip point (VTRIP) is determined on the falling
edge of VDD. The actual voltage trip point (VTRIPAC) will
be between the minimum trip point (VTRIPMIN) and the
maximum trip point (VTRIPMAX). There is a hysteresis on
this trip point to remove any “jitter” that would occur on
the VOUT pin when the device VDD is at the trip point.
Figure 4-2 shows the state of the VOUT pin as
determined by the VDD voltage. The VTRIP specification
is for falling VDD voltages. When the VDD voltage is
rising, the VOUT pin will not be driven high until VDD is at
VTRIP + VHYS.
VDD
VDD
RPU
MCP11X
(1)
VOUT
1
VSS
PIC®
Microcontroller
MCLR
(Reset Input)
GND
2
Note 1: RPU may be required with the MCP111
due to the open-drain output. Resistor
RPU is not required with the MCP112.
FIGURE 4-1:
VDD
Typical Application Circuit.
VTRIPAC + VHYSAC
VTRIPMAX
VTRIPAC
VTRIPMIN
VTRIPAC
1V
VOUT
< 1 V is outside the
device specifications
FIGURE 4-2:
VOUT Operation as Determined by the VTRIP and VHYS.
 2004-2013 Microchip Technology Inc.
DS21889E-page 11
MCP111/112
4.2
Negative Going VDD Transients
The minimum pulse width (time) required to cause a
reset may be an important criteria in the implementation of a Power-on Reset (POR) circuit. This time is
referred to as transient duration, defined as the amount
of time needed for these supervisory devices to
respond to a drop in VDD. The transient duration time is
dependant on the magnitude of VTRIP – VDD. Generally
speaking, the transient duration decreases with
increases in VTRIP – VDD.
Figure 4-3 shows a typical transient duration vs. reset
comparator overdrive for which the MCP111/112 will
not generate a reset pulse. It shows that the farther
below the trip point the transient pulse goes, the
duration of the pulse required to cause a reset gets
shorter. Figure 2-18 shows the transient response
characteristics for the MCP111/112.
A 0.1 µF bypass capacitor, mounted as close as
possible to the VDD pin, provides additional transient
immunity (refer to Figure 4-1).
4.3
Effect of Temperature on Time-out
Period (tRPU)
The time-out period (tRPU) determines how long the
device remains in the reset condition. This is affected
by both VDD and temperature. The graph shown in
Figures 2-22, 2-23 and 2-24 show the typical response
for different VDD values and temperatures.
Using in PIC® Microcontroller
ICSP™ Applications (MCP111
only)
4.4
Figure 4-4 shows the typical application circuit for using
the MCP111 for voltage supervisory function when the
PIC microcontroller will be programmed via the In-Circuit Serial Programming™ (ICSP) feature. Additional
information is available in TB087, “Using Voltage
Supervisors with PIC® Microcontroller Systems which
Implement
In-Circuit
Serial
Programming™”,
DS91087.
Note:
Supply Voltage
5V
0V
It is recommended that the current into the
RST pin be current limited by a 1 k
resistor.
VTRIP(MAX)
VTRIP(MIN)
VDD/VPP
VTRIP(MIN) - VDD
0.1 µF
tTRANS
Time (µs)
FIGURE 4-3:
Example of Typical
Transient Duration Waveform.
RPU
VDD
MCP111
RST
VSS
1 k
VDD
PIC®
MCU
MCLR
(reset input)
(Active-Low)
VSS
FIGURE 4-4:
Typical Application Circuit
for PIC® Microcontroller with the ICSP™ feature.
DS21889E-page 12
 2004-2013 Microchip Technology Inc.
MCP111/112
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Example:
3-Lead TO-92
XXXXXX
XXXXXX
XXXXXX
YWWNNN
MCP111
290E
TO^^
e3
547256
3-Pin SOT-23
Example:
Part Number
XXNN
SOT-23
SOT-23
MCP111T-195I/TT
MPNN
MCP112T-195I/TT
MRNN
MCP111T-240ETT
MQNN
MCP112T-240ETT
MSNN
MCP111T-270E/TT
MGNN
MCP112T-270E/TT
MANN
MCP111T-290E/TT
NHNN
MCP112T-290E/TT
MBNN
MCP111T-300E/TT
MJNN
MCP112T-300E/TT
MCNN
MCP111T-315E/TT
MKNN
MCP112T-315E/TT
MDNN
MCP111T-450E/TT
MLNN
MCP112T-450E/TT
MENN
MCP111T-475E/TT
MMNN
MCP112T-475E/TT
MFNN
3-Pin SOT-89
Example:
XXYYWW
NNN
Legend: XX...X
Y
WW
NNN
e3
*
Note:
Part Number
Part Number
SOT-89
Part Number
SOT-89
MCP111T-195I/MB
MP
MCP112T-195I/MB
MR
MCP111T-240EMB
MQ
MCP112T-240EMB
MS
MCP111T-270E/MB
MG
MCP112T-270E/MB
MA
MCP111T-290E/MB
NH
MCP112T-290E/MB
MB
MCP111T-300E/MB
MJ
MCP112T-300E/MB
MC
MCP111T-315E/MB
MK
MCP112T-315E/MB
MD
MCP111T-450E/MB
ML
MCP112T-450E/MB
ME
MCP111T-475E/MB
MM
MCP112T-475E/MB
MF
Customer-specific information
Year code (last digit of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2004-2013 Microchip Technology Inc.
DS21889E-page 13
MCP111/112
Package Marking Information (Continued)
3-Pin SC-70
Example:
Part Number
XXN
Top Side
SC-70
Part Number
SC-70
MCP111T-195I/LB
EPN
MCP112T-195I/LB
ERN
MCP111T-240E/LB
EQN
MCP112T-240E/LB
ESN
MCP111T-270E/LB
EGN
MCP112T-270E/LB
EAN
MCP111T-290E/LB
EHN
MCP112T-290E/LB
EBN
MCP111T-300E/LB
EJN
MCP112T-300E/LB
ECN
MCP111T-315E/LB
EKN
MCP112T-315E/LB
EDN
MCP111T-450E/LB
ELN
MCP112T-450E/LB
EEN
MCP111T-475E/LB
EMN
MCP112T-475E/LB
EFN
OR
Example:
Part Number
XXNN
Top Side
DS21889E-page 14
SC-70
Part Number
SC-70
MCP111T-195I/LB
EPNN
MCP112T-195I/LB
ERNN
MCP111T-240E/LB
EQNN
MCP112T-240E/LB
ESNN
MCP111T-270E/LB
EGNN
MCP112T-270E/LB
EANN
MCP111T-290E/LB
EHNN
MCP112T-290E/LB
EBNN
MCP111T-300E/LB
EJNN
MCP112T-300E/LB
ECNN
MCP111T-315E/LB
EKNN
MCP112T-315E/LB
EDNN
MCP111T-450E/LB
ELNN
MCP112T-450E/LB
EENN
MCP111T-475E/LB
EMNN
MCP112T-475E/LB
EFNN
 2004-2013 Microchip Technology Inc.
MCP111/112
3-Lead Plastic Small Outline Transistor (MB) (SOT89)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
H
E
B1
3
B
D D1
p1
2
p
R
1
B1
L
E1
A
C
Pitch
Outside lead pitch (basic)
Overall Height
Overall Width
Molded Package Width at Base
Molded Package Width at Top
Overall Length
Tab Length
Tab Corner Radii
Foot Length
Lead Thickness
Lead 2 Width
Leads 1 & 3 Width
Units
Dimension Limits
p
p1
A
H
E
E1
D
D1
R
L
c
B
B1
INCHES
MIN
MAX
.059 BSC
.118 BSC
.055
.063
.155
.167
.090
.102
.084
.090
.173
.181
.064
.072
.010
.035
.047
.014
.017
.017
.022
.014
.019
MILLIMETERS*
MIN
MAX
1.50 BSC
3.00 BSC
1.40
1.60
3.94
4.25
2.29
2.60
2.13
2.29
4.40
4.60
1.62
1.83
0.254
0.89
1.20
0.35
0.44
0.43
0.56
0.36
0.48
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold or flash protrusions. Mold flash or protrusions
shall not exceed .005" (0.127mm) per side.
JEDEC Equivalent: TO-243
Drawing No. C04-29
 2004-2013 Microchip Technology Inc.
Revised 07-24-03
DS21889E-page 15
MCP111/112
3-Lead Plastic Small Outline Transistor (TT) (SOT-23)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
2
B
p1
n
D
p
1

c
A


A2
A1
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
MIN
p1
A
A2
A1
E
E1
D
L

c
B


.035
.035
.000
.083
.047
.110
.014
0
.004
.015
0
0
INCHES*
NOM
3
.038
.076
.040
.037
.002
.093
.051
.115
.018
5
.006
.017
5
5
MAX
.044
.040
.004
.104
.055
.120
.022
10
.007
.020
10
10
MILLIMETERS
NOM
3
0.96
1.92
0.89
1.01
0.88
0.95
0.01
0.06
2.10
2.37
1.20
1.30
2.80
2.92
0.35
0.45
0
5
0.09
0.14
0.37
0.44
0
5
0
5
MIN
MAX
1.12
1.02
0.10
2.64
1.40
3.04
0.55
10
0.18
0.51
10
10
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-236
Drawing No. C04-104
DS21889E-page 16
 2004-2013 Microchip Technology Inc.
MCP111/112
3-Lead Plastic Small Outline Transistor (LB) (SC-70)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
2
B
p1
3
D
p
1
a
A2
A
c
b
A1
L
Units
Dimension Limits
Number of Pins
Pitch
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
Standoff
Overall Width
Molded Package Width
Overall Length
Foot Length
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
p
p1
A
A2
A1
E
E1
D
L
c
B
a
b
INCHES
MIN
3
.026 BSC.
.051 BSC.
.031
.031
.000
.071
.045
.071
.004
.003
.006
8°
8°
MAX
.043
.039
.0004
.094
.053
.089
.016
.010
.016
12°
12°
MILLIMETERS*
MIN
MAX
3
0.65 BSC.
1.30 BSC.
0.80
1.10
0.80
1.00
0.00
.010
1.80
2.40
1.15
1.35
1.80
2.25
0.10
0.41
0.08
0.25
0.15
0.40
8°
12°
8°
12°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions
shall not exceed .005" (0.127mm) per side.
JEITA (EIAJ) Equivalent: SC70
Drawing No. C04-104
 2004-2013 Microchip Technology Inc.
DS21889E-page 17
MCP111/112
3-Lead Plastic Transistor Outline (TO) (TO-92)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
n
1
L
1
2
3

B
p
c
A
R
Units
Dimension Limits
n
p

MIN
INCHES*
NOM
MAX
MILLIMETERS
NOM
3
1.27
3.30
3.62
4.45
4.71
4.32
4.64
2.16
2.29
12.70
14.10
0.36
0.43
0.41
0.48
4
5
2
3
MIN
Number of Pins
3
Pitch
.050
Bottom to Package Flat
A
.130
.143
.155
Overall Width
E1
.175
.186
.195
Overall Length
D
.170
.183
.195
Molded Package Radius
R
.085
.090
.095
Tip to Seating Plane
L
.500
.555
.610
c
Lead Thickness
.014
.017
.020
Lead Width
B
.016
.019
.022

4
5
6
Mold Draft Angle Top

Mold Draft Angle Bottom
2
3
4
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-92
Drawing No. C04-101
DS21889E-page 18
MAX
3.94
4.95
4.95
2.41
15.49
0.51
0.56
6
4
 2004-2013 Microchip Technology Inc.
MCP111/112
5.2
Product Tape and Reel Specifications
FIGURE 5-1:
EMBOSSED CARRIER DIMENSIONS (8, 12, 16 AND 24 MM TAPE ONLY)
Top
Cover
Tape
A0
W
B0
K0
P
TABLE 1:
Case
Outline
CARRIER TAPE/CAVITY DIMENSIONS
Carrier
Dimensions
Package
Type
W
mm
Cavity
Dimensions
P
mm
A0
mm
B0
mm
Output
Quantity
Units
K0
mm
Reel
Diameter in
mm
TT
SOT-23B
3L
8
4
3.15
2.77
1.22
3000
180
LB
SC-70
3L
8
4
2.4
2.4
1.19
3000
180
FIGURE 5-2:
3-LEAD SOT-23/SC70 DEVICE TAPE AND REEL SPECIFICATIONS
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
 2004-2013 Microchip Technology Inc.
DS21889E-page 19
MCP111/112
FIGURE 5-3:
TO-92 DEVICES
User Direction of Feed
P
Device
Marking
MARK
MARK
MARK
FACE
FACE
FACE
Seal
Tape
Back
Tape
Note:
W
Bent leads are for Tape and Reel only.
FIGURE 5-4:
SOT-89 DEVICES
User Direction of Feed
Pin 1
Pin 1
P, Pitch
Standard Reel Component Orientation
DS21889E-page 20
W, Width
of Carrier
Tape
Reverse Reel Component Orientation
 2004-2013 Microchip Technology Inc.
MCP111/112
APPENDIX A:
REVISION HISTORY
Revision E (January 2013)
• Added a note to each package outline drawing.
Revision D (June 2005)
1.
Added
SOT-89-3
throughout.
package
information
Revision C (March 2005)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Added Section 4.4 “Using in PIC® Microcontroller ICSP™ Applications (MCP111 only)”
on using the MCP111 in PIC microcontroller
ICSP applications.
Added VODH specifications in Section 1.0
“Electrical
Characteristics”
(for
ICSP
applications).
Added Figure 2-28.
Added devices features table to page 1.
Updated SC-70 package markings and added
Pb-free marking information to Section 5.0
“Packaging information”.
Added Appendix A: “Revision History”.
Revision B (August 2004)
1.
Corrected package marking information in
Section 5.0 “Packaging information”
Revision A (May 2004)
• Original Release of this Document.
 2004-2013 Microchip Technology Inc.
DS21889E-page 21
MCP111/112
NOTES:
DS21889E-page 22
l
 2004-2013 Microchip Technology Inc.
MCP111/112
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
XXX
X
X
XX
Tape/Reel Monitoring Temperature Package
Range
Option
Options
Examples:
a)
b)
Device:
MCP111: MicroPower Voltage Detector, open-drain
MCP111T: MicroPower Voltage Detector, open-drain
(Tape and Reel)
MCP112: MicroPower Voltage Detector, push-pull
MCP112T: MicroPower Voltage Detector, push-pull
(Tape and Reel)
c)
d)
Monitoring Options:
Temperature Range:
Package:
195
240
270
290
300
315
450
475
=
=
=
=
=
=
=
=
1.90V
2.32V
2.63V
2.90V
2.93V
3.08V
4.38V
4.63V
I
E
= -40°C to +85°C (MCP11X-195 only)
= -40°C to +125°C (Except MCP11X-195 only)
LB
MB
TO
TT
=
=
=
=
SC-70, 3-lead
SOT-89, 3-lead
TO-92, 3-lead
SOT-23B, 3-lead
 2004-2013 Microchip Technology Inc.
a)
b)
c)
d)
MCP111T-195I/TT: Tape and Reel,
1.95V option, open-drain,
-40°C to +85°C,
SOT-23B package.
MCP111T-315E/LB: Tape and Reel,
3.15V option, open-drain,
-40°C to +125°C,
SC-70-3 package.
MCP111-300E/TO: 3.00V option, open-drain,
-40°C to +125°C,
TO-92-3 package.
MCP111-315E/MB: 3.15V option, open-drain,
-40°C to +125°C,
SOT-89-3 package.
MCP112T-290E/TT: Tape and Reel,
2.90V option, push-pull, 40°C to +125°C,
SOT-23B-3 package.
MCP112T-475E/LB: Tape and Reel,
4.75V option, push-pull,
-40°C to +125°C,
SC-70-3 package.
MCP112-450E/TO: 4.5V option, push-pull,
-40°C to +125°C,
TO-92-3 package.
MCP112-315E/MB: 3.15V option, push-pull,
-40°C to +125°C,
SOT-89-3 package.
DS21889E-page 23
MCP111/112
NOTES:
DS21889E-page 24
 2004-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2004-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620769133
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2004-2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21889E-page 25
Worldwide Sales and Service
AMERICAS
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Taiwan - Taipei
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UK - Wokingham
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Tel: 86-592-2388138
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Tel: 86-756-3210040
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DS21889E-page 26
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
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Fax: 81-3-6880-3771
11/29/12
 2004-2013 Microchip Technology Inc.