SEMIKRON SKIM120GD176D

SKiM 120GD176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
#
#23
4
6 *,
SKiM 4
SKiM 120GD176D
Preliminary Data
Features
!" #
Typical Applications
$ % &'& (
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Values
Units
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Inverse diode
IGBT Modules
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#9
#923
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/ #93
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Characteristics
Symbol Conditions
IGBT
4*,
#
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;
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6 -& */-&, .
#
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4 ): -& : / 3>
4 ): -& : / 3>
2@A@
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24
24 /- =
6 /-& .
*,
4 5 /& *,
C# !: 6 .
min.
typ.
max.
Units
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=
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B
B
: # $
Inverse diode
9 ;
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Thermal characteristics
2*6(,
#4H
)7
CFI
2*6(,
9IJ
) &!
CFI
Temperature Sensor
2
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8 *-,
L
Mechanical data
3/
3-
K *3&,
*3!,
7
8
&
M
M
8/)
GD
1
24-10-2006 RAA
© by SEMIKRON
SKiM 120GD176D
Fig. 1 Output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Turn-on /-off energy = f (IC)
Fig. 4 Turn-on /-off energy = f (RG)
Fig. 5 Transfer characteristic
Fig. 6 Gate charge characteristic
2
24-10-2006 RAA
© by SEMIKRON
SKiM 120GD176D
Fig. 7 Switching times vs. IC
Fig. 8 Switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of
Fig. 10 Transient thermal impedance of inverse diodes
IGBT ZthJC = f (tp); D = tp/tc = tp * f
IGBT ZthJC = f (tp); D = tp/tc = tp * f
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'
Fig. 12 CAL diode peak reverse recovery current
3
24-10-2006 RAA
© by SEMIKRON
SKiM 120GD176D
Fig. 13 Typ. CAL diode recovered charge
Dimensions in mm
4J
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
24-10-2006 RAA
© by SEMIKRON