SEMIKRON SKKT20B14E

SKKT 20, SKKT 20B THYRISTOR BRIDGE,SCR,BRIDGE
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SKKT 20B
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SKKT
1
03-01-2005 NOS
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
2
03-01-2005 NOS
© by SEMIKRON
SKKT 20, SKKT 20B THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
3
03-01-2005 NOS
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
03-01-2005 NOS
© by SEMIKRON