SKMD 202E, SKND 202E THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK® 2 Ultrafast Epitaxial Diode Modules SKND 202E SKMD 202E 4! 44! - - 54! 6 +-, . 170 0 ' 00 3 5. 6 -- . 1( 89& , :%; < 6 9= >/3 !" --) $" --)- + + !" --)+ Symbol Conditions Values Units 5. ( 89; < 6 9, 183 >/ -9 18,*3 . 5! <? 6 -, >/; 8 <? 6 8, >/; 8 <? 6 -, >/; 9&+ ((( 8 +- -9 ,8 . . .@ <? 6 8, >/; 9&+ ((( 8 +A .@ @ 5 1<B3 < 4" <? 6 -, >/; 5 6 , . <? 6 8, >/ <? 6 8, >/ <? 6 -, >/; 4" 6 44! 7( 8&*, 7( &9 7( 8&, 7( - C . 4" <? 6 8+ >/; 4" 6 44! 7( 8 . D 4! <? 6 8, >/& 5 6 , .& FG 6 8 .GE& 4 6 8 8* F E/ . F H &- G &8 &8 G &, F ((( J 8, GI GI >/ ) Features !" $" %& ' ( ) *+ ,+- Typical Applications ' ./ 4 1?F3 4 1F3 <? G 0 G 0 < F ((( J 8-, >/ + G -, , L 8, M , L 8, M , N A&98 K $ $ G@ 7( -, !" $" . ,8 . ,- ! ! ( ( , :%; (((; 8 G 8 ( / "/ 0 0 123 SKMD 1 $" --)+ SKND 14-10-2004 NOS © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1 Typ. recovery charge vs. current decrease Fig. 2 Peak recovery current vs. current decrease Fig. 3 Transient thermal impedance vs. time Fig. 4 Forward characteristics Fig. 5 Surge overload current vs. time 2 14-10-2004 NOS © by SEMIKRON SKMD 202E, SKND 202E THYRISTOR BRIDGE,SCR,BRIDGE Dimensions in mm / . ,8 !" / . ,- $" / . ,8 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 14-10-2004 NOS © by SEMIKRON