SPANSION AM75DL9608HGT75IS

Am75DL9608HG
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 30772 Revision A
Amendment +1 Issue Date November 17, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am75DL9608HG
Stacked Multi-Chip Package (MCP) Flash Memory and Pseudo SRAM
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
8 Mbit (512 K x 16-Bit) Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
■ Power supply voltage of 2.7 to 3.3 volt
■ High performance
— Flash access time as fast as 70 ns
— Pseudo SRAM access time as fast as 55 ns
— Access time as fast as 70 ns
— Program time: 4 µs/word typical utilizing Accelerate function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million erase cycles guaranteed per sector
■ Package
■ 20 year data retention at 125°C
— 73-Ball FBGA
■ Operating Temperature
— Reliable operation for the life of the system
— –40°C to +85°C
SOFTWARE FEATURES
Flash Memory Features
(Am29DL640H/Am29DL320G)
— Features apply to Am29DL640H and Am29DL320G
independently.
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flexible Bank™ architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
■ Manufactured on 0.17 µm process technology
(Am29DL320G), 0.13 µm process technology
(Am29DL640H)
■ SecSi™ (Secured Silicon) Sector
— Extra 256 byte sector on Am29DL640H
— Extra 256 byte sector on Am29DL320G
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
— Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■ Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■ Boot sectors
— Top and bottom boot sectors in Am29DL640H
— Top or bottom boot options in Am29DL320G
■ Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
■ Supports Common Flash Memory Interface (CFI)
■ Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
■ WP#/ACC input pin
— Write protect (WP#) protects sectors 0, 1, 140, and 141 in
Am29DL640H, and two outermost boot sectors in
Am29DL320G
— Acceleration (ACC) function accelerates program timing
■ Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Pseudo SRAM Features
■ Power dissipation
— Operating: 30 mA maximum
— Standby: 60 µA maximum
■ CE1s# and CE2s Chip Select
■ Power down features using CE1s# and CE2s
■ Data retention supply voltage: 2.7 to 3.3 volt
■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
PERFORMANCE CHARACTERISTICS
■ High performance
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice. 11/18/03
Publication# 30772 Rev:A Amendment/+1
Issue Date: November 17, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am75DL9608HG consists of two flash memory
devices (one 64-Mbit Am29DL640H and one 32-Mbit
Am29DL320G), and one 8 Mbit pseudo SRAM device.
Am29DL640H and Am29DL320G Features
Am29DL640H is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words. The
Am29DL320G is a 32 megabit, 3.0 volt-only flash
memory device, organized as 2,097,152 words. Word
mode data appears on DQ15–DQ0. The device is designed to be programmed in-system with the standard
3.0 volt VCC supply, and can also be programmed in
standard EPROM programmers.
The device is available with an access time of 70 or 85
ns and is offered in a 73-ball FBGA package. Standard
control pins—chip enable (CE#fx), write enable
(WE#), and output enable (OE#)—control normal read
and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into four banks. Sector addresses are fixed,
system software can be used to form user-defined
bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can improve overall system performance by allowing a host
system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DL640H can be organized as both a top and
bottom boot sector configuration.
Bank
Megabits
Sector Sizes
Bank 1
8 Mb
Eight 4 Kword,
Fifteen 32 Kword
Bank 2
24 Mb
Forty-eight 32 Kword
Bank 3
24 Mb
Forty-eight 32 Kword
Bank 4
8 Mb
Eight 4 Kword,
Fifteen 32 Kword
The Am29DL320G can be organized as either a top or
bottom boot sector configuration. Top boot configuration is shown in the following table.
Bank
2
Megabits
Sector Sizes
Bank 1
4 Mb
Eight 4 Kword,
Seven 32 Kword
Bank 2
12 Mb
Twenty-four 32 Kword
Bank 3
12 Mb
Twenty-four 32 Kword
Bank 4
4 Mb
Eight 32 Kword
Bottom boot configuration is shown in the following table.
Bank
Megabits
Sector Sizes
Bank 1
4 Mb
Eight 32 Kword
Bank 2
12 Mb
Twenty-four 32 Kword
Bank 3
12 Mb
Twenty-four 32 Kword
Bank 4
4 Mb
Eight 4 Kword,
Seven 32 Kword
Available on Am29DL640H and Am29DL320G, the
SecSi™ (Secured Silicon) Sector is an extra 256
byte sector capable of being permanently locked by
AMD or customers. The Secure SectorSecSi Indicator Bit (DQ7) is permanently set to a 1 if the part is
factory locked, and set to a 0 if customer lockable.
This way, customer lockable parts can never be used
to replace a factory locked part.
Factory locked parts provide several options. The Secure SectorSecSi Sector may store a secure, random
16 byte ESN (Electronic Serial Number), customer
code (programmed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the
Secure SectorSecSi Sector as a one-time programmable area.
The AMD DMS (Data Management Software) manages data programming, enables EEPROM emulation,
and eases historical sector erase flash limitations. For
more information on DMS or to obtain the software,
contact AMD or an authorized representative.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both modes.
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . 6
Flash Memory Block Diagram . . . . . . . . . . . . . . . 7
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 8
Special Package Handling Instructions .................................... 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10
MCP Device Bus Operations . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations—Flash Word Mode .................... 11
Flash Device Bus Operations . . . . . . . . . . . . . . . 12
Requirements for Reading Array Data ................................... 12
Writing Commands/Command Sequences ............................ 12
Simultaneous Read/Write Operations with Zero Latency ....... 12
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 13
Table 2. Am29DL640H Sector Architecture ....................................14
Table 3. Am29DL640H Bank Address ............................................17
Table 4. Am29DL640H SecSi™ Sector Addresses .......................17
Table 5. Am29DL320G Top Boot Sector Addresses .....................18
Table 6. Am29DL320G Top Boot SecSiTM Sector Addresses ........ 19
Table 7. Am29DL320G Bottom Boot Sector Addresses .................20
Table 8. Am29DL320G Bottom Boot SecSiTM Sector Addresses ... 21
Table 9. Am29DL640H Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................22
Table 10. Am29DL320G Top Boot Sector/Sector
Block Addresses for Protection/Unprotection ..................................23
Table 11. Am29DL320G Bottom Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................23
Write Protect (WP#) ................................................................ 24
Table 12. WP#/ACC Modes ............................................................24
Temporary Sector Unprotect .................................................. 24
Figure 5. Erase Operation.............................................................. 38
Erase Suspend/Erase Resume Commands ........................... 38
Table 22. Am29DL640H and Am29DL320G Command Definitions 39
Flash Write Operation Status . . . . . . . . . . . . . . . 40
DQ7: Data# Polling ................................................................. 40
Figure 6. Data# Polling Algorithm .................................................. 40
DQ6: Toggle Bit I .................................................................... 41
Figure 7. Toggle Bit Algorithm........................................................ 41
DQ2: Toggle Bit II ................................................................... 42
Reading Toggle Bits DQ6/DQ2 ............................................... 42
DQ5: Exceeded Timing Limits ................................................ 42
DQ3: Sector Erase Timer ....................................................... 42
Table 23. Write Operation Status ................................................... 43
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 44
Figure 8. Maximum Negative Overshoot Waveform ...................... 44
Figure 9. Maximum Positive Overshoot Waveform........................ 44
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 45
CMOS Compatible ..................................................................... 45
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 46
Figure 11. Typical ICC1 vs. Frequency ............................................ 46
Pseudo SRAM DC and
Operating Characteristics . . . . . . . . . . . . . . . . . . 47
Figure 12. Standby Current ISB CMOS ......................................... 47
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 13. Test Setup.................................................................... 48
Figure 14. Input Waveforms and Measurement Levels ................. 48
Flash AC Characteristics . . . . . . . . . . . . . . . . . . 49
Pseudo SRAM CE#s Timing ...................................................... 49
Figure 15. Timing Diagram for Alternating
Between Pseudo SRAM to Flash................................................... 49
Figure 1. Temporary Sector Unprotect Operation........................... 25
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 26
Read-Only Operations .............................................................. 50
SecSi™ (Secured Silicon) Sector
SectorFlash Memory Region ................................................. 27
Hardware Reset (RESET#) ....................................................... 51
Table 13. SecSi Sector Programming ................................................27
Figure 3. SecSi Sector Protect Verify.............................................. 28
Erase and Program Operations ................................................. 52
Hardware Data Protection ...................................................... 28
Common Flash Memory Interface (CFI) . . . . . . . 28
Table 14. Am29DL640H CFI Query Identification String ................ 29
Table 15. Am29DL640H System Interface String ........................... 29
Table 16. Am29DL640H Device Geometry Definition..................... 30
Table 17. Am29DL640H Primary Vendor-Specific
Extended Query .............................................................................. 31
Table 18. Am29DL320G CFI Query Identification String ................ 32
Table 19. Am29DL320G System Interface String ........................... 32
Table 20. Am29DL320G Device Geometry Definition..................... 33
Table 21. Am29DL320G Primary Vendor-Specific
Extended Query .............................................................................. 34
Flash Command Definitions . . . . . . . . . . . . . . . . 35
Reading Array Data ................................................................ 35
Reset Command ..................................................................... 35
Autoselect Command Sequence ............................................ 35
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 35
Program Command Sequence ............................................... 36
Figure 4. Program Operation .......................................................... 37
Chip Erase Command Sequence ........................................... 37
Sector Erase Command Sequence ........................................ 37
November 17, 2003
Figure 16. Read Operation Timings ............................................... 50
Figure 17. Reset Timings ............................................................... 51
Figure 18. Program Operation Timings..........................................
Figure 19. Accelerated Program Timing Diagram..........................
Figure 20. Chip/Sector Erase Operation Timings ..........................
Figure 21. Back-to-back Read/Write Cycle Timings ......................
Figure 22. Data# Polling Timings (During Embedded Algorithms).
Figure 23. Toggle Bit Timings (During Embedded Algorithms)......
Figure 24. DQ2 vs. DQ6.................................................................
53
53
54
55
55
56
56
Temporary Sector Unprotect ..................................................... 57
Figure 25. Temporary Sector Unprotect Timing Diagram .............. 57
Figure 26. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 58
Alternate CE#f Controlled Erase and Program Operations ....... 59
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program)
Operation Timings.......................................................................... 60
Pseudo SRAM AC Characteristics . . . . . . . . . . . 61
Power Up Time .......................................................................... 61
Read Cycle ................................................................................ 61
Figure 28. Pseudo SRAM Read Cycle—Address Controlled......... 61
Figure 29. Pseudo SRAM Read Cycle........................................... 62
Write Cycle ................................................................................ 63
Figure 30. Pseudo SRAM Write Cycle—WE# Control ................... 63
Figure 31. Pseudo SRAM Write Cycle—CE1#s Control ................ 64
Figure 32. Pseudo SRAM Write Cycle—
UB#s and LB#s Control.................................................................. 65
Am75DL9608HG
3
A D V A N C E
I N F O R M A T I O N
Flash Erase And Programming Performance . . . 66
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 66
BGA Package Capacitance . . . . . . . . . . . . . . . . 66
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . 66
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 67
FTA073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm ................ 67
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 68
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . 6
Flash Memory Block Diagram . . . . . . . . . . . . . . . 7
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 8
Special Package Handling Instructions .................................... 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10
MCP Device Bus Operations . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations—Flash Word Mode .................... 11
Flash Device Bus Operations . . . . . . . . . . . . . . . 12
Requirements for Reading Array Data ................................... 12
Writing Commands/Command Sequences ............................ 12
Simultaneous Read/Write Operations with Zero Latency ....... 12
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 13
Table 2. Am29DL640H Sector Architecture ....................................14
Table 3. Am29DL640H Bank Address ............................................17
Table 4. Am29DL640H SecSi™ Sector Addresses .......................17
Table 5. Am29DL320G Top Boot Sector Addresses .....................18
Table 6. Am29DL320G Top Boot SecSiTM Sector Addresses ........ 19
Table 7. Am29DL320G Bottom Boot Sector Addresses .................20
Table 8. Am29DL320G Bottom Boot SecSiTM Sector Addresses ... 21
Table 9. Am29DL640H Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................22
Table 10. Am29DL320G Top Boot Sector/Sector
Block Addresses for Protection/Unprotection ..................................23
Table 11. Am29DL320G Bottom Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................23
Figure 4. Program Operation ......................................................... 37
Chip Erase Command Sequence ........................................... 37
Sector Erase Command Sequence ........................................ 37
Figure 5. Erase Operation.............................................................. 38
Erase Suspend/Erase Resume Commands ........................... 38
Table 22. Am29DL640H and Am29DL320G Command Definitions 39
Flash Write Operation Status . . . . . . . . . . . . . . . 40
DQ7: Data# Polling ................................................................. 40
Figure 6. Data# Polling Algorithm .................................................. 40
DQ6: Toggle Bit I .................................................................... 41
Figure 7. Toggle Bit Algorithm........................................................ 41
DQ2: Toggle Bit II ................................................................... 42
Reading Toggle Bits DQ6/DQ2 ............................................... 42
DQ5: Exceeded Timing Limits ................................................ 42
DQ3: Sector Erase Timer ....................................................... 42
Table 23. Write Operation Status ................................................... 43
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 44
Figure 8. Maximum Negative Overshoot Waveform ...................... 44
Figure 9. Maximum Positive Overshoot Waveform........................ 44
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 45
CMOS Compatible ..................................................................... 45
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 46
Figure 11. Typical ICC1 vs. Frequency ............................................ 46
Pseudo SRAM DC and
Operating Characteristics . . . . . . . . . . . . . . . . . . 47
Figure 12. Standby Current ISB CMOS ......................................... 47
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 13. Test Setup.................................................................... 49
Figure 14. Input Waveforms and Measurement Levels ................. 49
Flash AC Characteristics . . . . . . . . . . . . . . . . . . 50
Pseudo SRAM CE#s Timing ...................................................... 50
Table 12. WP#/ACC Modes ............................................................24
Figure 15. Timing Diagram for Alternating
Between Pseudo SRAM to Flash................................................... 50
Temporary Sector Unprotect .................................................. 24
Read-Only Operations .............................................................. 51
Figure 1. Temporary Sector Unprotect Operation........................... 25
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 26
Hardware Reset (RESET#) ....................................................... 52
SecSi™ (Secured Silicon) Sector
SectorFlash Memory Region ................................................. 27
Erase and Program Operations ................................................. 53
Write Protect (WP#) ................................................................ 24
Table 13. SecSi Sector Programming ................................................27
Figure 3. SecSi Sector Protect Verify.............................................. 28
Hardware Data Protection ...................................................... 28
Common Flash Memory Interface (CFI) . . . . . . . 28
Table 14. Am29DL640H CFI Query Identification String ................ 29
Table 15. Am29DL640H System Interface String ........................... 29
Table 16. Am29DL640H Device Geometry Definition..................... 30
Table 17. Am29DL640H Primary Vendor-Specific
Extended Query .............................................................................. 31
Table 18. Am29DL320G CFI Query Identification String ................ 32
Table 19. Am29DL320G System Interface String ........................... 32
Table 20. Am29DL320G Device Geometry Definition..................... 33
Table 21. Am29DL320G Primary Vendor-Specific
Extended Query .............................................................................. 34
Flash Command Definitions . . . . . . . . . . . . . . . . 35
Reading Array Data ................................................................ 35
Reset Command ..................................................................... 35
Autoselect Command Sequence ............................................ 35
4
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 35
Program Command Sequence ............................................... 36
Figure 16. Read Operation Timings ............................................... 51
Figure 17. Reset Timings ............................................................... 52
Figure 18. Program Operation Timings..........................................
Figure 19. Accelerated Program Timing Diagram..........................
Figure 20. Chip/Sector Erase Operation Timings ..........................
Figure 21. Back-to-back Read/Write Cycle Timings ......................
Figure 22. Data# Polling Timings (During Embedded Algorithms).
Figure 23. Toggle Bit Timings (During Embedded Algorithms)......
Figure 24. DQ2 vs. DQ6.................................................................
54
54
55
56
56
57
57
Temporary Sector Unprotect ..................................................... 58
Figure 25. Temporary Sector Unprotect Timing Diagram .............. 58
Figure 26. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 59
Alternate CE#f Controlled Erase and Program Operations ....... 60
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program)
Operation Timings.......................................................................... 61
Pseudo SRAM AC Characteristics . . . . . . . . . . . 62
Power Up Time .......................................................................... 62
Read Cycle ................................................................................ 62
Figure 28. Pseudo SRAM Read Cycle—Address Controlled......... 62
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
Figure 29. Pseudo SRAM Read Cycle............................................ 63
Write Cycle ................................................................................ 64
Figure 30. Pseudo SRAM Write Cycle—WE# Control .................... 64
Figure 31. Pseudo SRAM Write Cycle—CE1#s Control ................. 65
Figure 32. Pseudo SRAM Write Cycle—
UB#s and LB#s Control................................................................... 66
Flash Erase And Programming Performance . . . 67
November 17, 2003
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 67
BGA Package Capacitance . . . . . . . . . . . . . . . . . 67
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 67
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 68
FTA073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm ................ 68
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 69
Am75DL9608HG
5
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Speed
Options
Am75DL9608HG
Standard Voltage Range:
VCC = 2.7–3.3 V
Flash Memory
(Am29DL640H, Am29DL320G)
Pseudo SRAM
75
70
75
70
Max Access Time (ns)
70
70
55
70
CE# Access (ns)
70
70
55
70
OE# Access (ns)
30
30
30
35
MCP BLOCK DIAGRAM
VSS
VCCf
A21 to A0
RY/BY#
64 MBit
Flash Memory
#1
CE#f1
VCCf
DQ15 to DQ0
VSS
RY/BY#
A20 to A0
32 MBit
Flash Memory
#2
RESET#
WP#/ACC
CE#f2
VCCs
VSS
A18 to A0
LB#s
UB#s
WE#
OE#
CE1#s
CE2s
6
8 MBit
pseudo
Static RAM
Am75DL9608HG
DQ15 to DQ0
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH MEMORY BLOCK DIAGRAM
VCC
VSS
OE#
Mux
Bank 1
Bank 2
X-Decoder
A21*–A0
DQ15–DQ0
Control
Mux
X-Decoder
A21*–A0
WP#/ACC
Status
DQ15–DQ0
CE#
STATE
CONTROL
&
COMMAND
REGISTER
Bank 3 Address
Bank 3
X-Decoder
A21*–A0
Bank 4 Address
Y-gate
RESET#
WE#
DQ15–DQ0
Bank 2 Address
DQ15–DQ0
RY/BY#
DQ15–DQ0
A21*–A0
X-Decoder
Y-gate
Bank 1 Address
A21*–A0
Bank 4
Mux
* Addresses for Am29DL640H are A21–A0. Address for Am29DL320G are A20–A0.
November 17, 2003
Am75DL9608HG
7
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAM
73-Ball FBGA
Top View
A1
A10
NC
NC
B1
B5
B6
B10
NC
NC
NC
NC
C5
C3
C4
C6
C7
C8
NC
A7
LB# WP#/ACC WE#
A8
A11
D2
D3
D4
D7
D8
D9
A3
A6
UB#
A19
A12
A15
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RY/BY#
A20
A9
A13
A21
F1
F2
F3
F4
F7
F8
F9
F10
NC
A1
A4
A17
A10
A14
CE#f2
NC
G1
G2
G3
G4
G7
G8
G9
G10
NC
A0
VSS
DQ1
DQ6
NC
A16
NC
H2
H3
H4
H5
H6
H7
H8
H9
CE#f1
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
J2
J3
J4
J5
J6
J7
J8
J9
CE1#s
DQ0
DQ10
VCCf
VCCs
DQ12
DQ7
VSS
K3
K4
K5
K6
K7
K8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
L1
L5
L6
L10
NC
NC
NC
NC
D6
RESET# CE2s
M1
M10
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (BGA). The package and/or data
8
Pseudo
SRAM only
Shared
C1
D5
Flash only
integrity may be compromised if the package body is
exposed to temperatures above 150°C for prolonged
periods of time.
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
A18–A0
LOGIC SYMBOL
= 19 Address Inputs (Common)
19
A21–A19, A-1 = 4 Address Inputs (Flash)
A18–A0
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f1
= Flash Chip Enable 1
(Am29DL640H)
CE#f2
= Flash Chip Enable 2
(Am29DL320G)
A21–A19
CE#f1
CE#f2
DQ15–DQ0
CE1#s
CE#1s
= Pseudo SRAM Chip Enable 1
CE2s
= Pseudo SRAM Chip Enable 2
OE#
= Output Enable (Common)
WE#
= Write Enable (Common)
RY/BY#
= Ready/Busy Output
UB#s
= Upper Byte Control (Pseudo SRAM)
LB#s
= Lower Byte Control (Pseudo SRAM)
RESET#
= Hardware Reset Pin, Active Low
WP#/ACC
= Hardware Write Protect/
Acceleration Pin (Flash)
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCCs
= Pseudo SRAM Power Supply
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
November 17, 2003
16
CE2s
OE#
RY/BY#
WE#
WP#/ACC
Am75DL9608HG
RESET#
UB#s
LB#s
9
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am75DL960
8
HG
T
75
I
T
TAPE AND REEL
T
= 7 inches
S
= 13 inches
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
SPEED OPTION
75
= 70 ns Flash + 55 ns pSRAM
70
= 70 ns Flash + 70 ns pSRAM (See page 5)
BOOT SECTOR ARCHITECTURE
T
= Top Boot of Am29DL320G Flash
B
= Bottom Boot of Am29DL320G Flash
PROCESS TECHNOLOGY
H
= 0.13 µm (Am29DL640H)
G
= 0.17 µm (Am29DL320G)
PSEUDO SRAM DEVICE DENSITY
8
=
8 Mbits
AMD DEVICE NUMBER/DESCRIPTION
Am75DL9608HG
Stacked Multi-Chip Package (MCP) Flash Memory and Pseudo SRAM
Am29DL640H 64 Megabit (8/4 M x 16-Bit) and
Am29DL320G 32 Megabit (4/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
MCP DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
10
Order Number
Package Marking
Am75DL9608HGT70I
Am75DL9608HGB70I
T, S
M750000000
M750000001
Am75DL9608HGT75I
Am75DL9608HGB75I
T, S
M750000002
M750000003
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Tables 1-2 lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 1.
Operation
(Notes 1, 2)
I N F O R M A T I O N
Device Bus Operations—Flash Word Mode
CE#f1
CE1#s
CE2s
CE#f2
OE# WE#
(Note 8) (Note 8)
(Note 7)
H
X
X
L
H
X
X
L
VCC ±
0.3 V
H
X
X
L
Output Disable
L
L
H
Flash Hardware
Reset
X
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
Read from Flash
L
Write to Flash
L
Standby
Sector Protect
(Note 5)
L
Sector Unprotect
(Note 5)
L
Temporary Sector
Unprotect
X
Read from Pseudo
SRAM
Write to Pseudo
SRAM
H
H
L
L
H
H
Addr.
LB#s UB#s RESET#
WP#/
ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
L
H
AIN
X
X
H
L/H
DOUT
DOUT
H
L
AIN
X
X
H
(Note 4)
DIN
DIN
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
H
H
X
L
X
H
H
X
X
L
H
L/H
High-Z
High-Z
X
X
X
X
X
L
L/H
High-Z
High-Z
L
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
VID
L/H
DIN
X
H
L
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
L
L
DOUT
DOUT
H
L
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
L
H
DIN
High-Z
H
L
X
H
L
AIN
AIN
H
H
X
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#fx = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL, the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
7. Only one flash device should be accessed at a time. For Am29DL640H flash access, CE#f1 = VIL, CE#f2 = VIH. For Am29DL320G
flash access, CE#f1 = VIH, CE#f2 = ViL.
8. CE#1s= VIL, CE2s= VIH, CE#f1=VIH and CE#f2=VIH when accessing pseudo SRAM.
November 17, 2003
Am75DL9608HG
11
A D V A N C E
I N F O R M A T I O N
FLASH DEVICE BUS OPERATIONS
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE#f and OE# pins to VIL. CE#f is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
Refer to the AC Read-Only Operations table for timing
specifications and to Figure 14 for the timing diagram.
ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE#f to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The
“Byte/Word Program Command Sequence” section
has details on programming data to the device using
both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
space that each sector occupies. Similarly, a “sector
address” is the address bits required to uniquely select
a sector. The “Flash Command Definitions” section
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
The device address space is divided into four banks. A
“bank address” is the address bits required to uniquely
select a bank.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The Flash
AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
12
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
See “Write Protect (WP#)” on page 23 for related information.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Sector/Sector Block Protection
and Unprotection and Autoselect Command Sequence sections for more information.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being
erased). Figure 19 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6f and ICC7f in the table represent the current specifications for read-while-program and
read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE#f and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
V IH .) If CE#f and RESET# are held at V IH , but not
within VCC ± 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The de-
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
vice requires standard access time (tCE) for read access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3f in the table represents the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
30 ns. The automatic sleep mode is independent of
the CE#f, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC5f in the table represents the automatic sleep mode
current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
November 17, 2003
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (I CC4 f). If RESET# is
held at VIL but not within VSS±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the Flash AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Am75DL9608HG
13
A D V A N C E
Table 2.
Bank
Bank 1
14
I N F O R M A T I O N
Am29DL640H Sector Architecture
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA0
0000000000
8/4
00000h–00FFFh
SA1
0000000001
8/4
01000h–01FFFh
SA2
0000000010
8/4
02000h–02FFFh
SA3
0000000011
8/4
03000h–03FFFh
SA4
0000000100
8/4
04000h–04FFFh
SA5
0000000101
8/4
05000h–05FFFh
SA6
0000000110
8/4
06000h–06FFFh
SA7
0000000111
8/4
07000h–07FFFh
SA8
0000001xxx
64/32
08000h–0FFFFh
SA9
0000010xxx
64/32
10000h–17FFFh
SA10
0000011xxx
64/32
18000h–1FFFFh
SA11
0000100xxx
64/32
20000h–27FFFh
SA12
0000101xxx
64/32
28000h–2FFFFh
SA13
0000110xxx
64/32
30000h–37FFFh
SA14
0000111xxx
64/32
38000h–3FFFFh
SA15
0001000xxx
64/32
40000h–47FFFh
SA16
0001001xxx
64/32
48000h–4FFFFh
SA17
0001010xxx
64/32
50000h–57FFFh
SA18
0001011xxx
64/32
58000h–5FFFFh
SA19
0001100xxx
64/32
60000h–67FFFh
SA20
0001101xxx
64/32
68000h–6FFFFh
SA21
0001101xxx
64/32
70000h–77FFFh
SA22
0001111xxx
64/32
78000h–7FFFFh
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 2.
Bank
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
SA23
0010000xxx
64/32
80000h–87FFFh
SA24
0010001xxx
64/32
88000h–8FFFFh
SA25
0010010xxx
64/32
90000h–97FFFh
SA26
0010011xxx
64/32
98000h–9FFFFh
SA27
0010100xxx
64/32
A0000h–A7FFFh
SA28
0010101xxx
64/32
A8000h–AFFFFh
SA29
0010110xxx
64/32
B0000h–B7FFFh
SA30
0010111xxx
64/32
B8000h–BFFFFh
SA31
0011000xxx
64/32
C0000h–C7FFFh
SA32
0011001xxx
64/32
C8000h–CFFFFh
SA33
0011010xxx
64/32
D0000h–D7FFFh
SA34
0011011xxx
64/32
D8000h–DFFFFh
SA35
0011000xxx
64/32
E0000h–E7FFFh
SA36
0011101xxx
64/32
E8000h–EFFFFh
SA37
0011110xxx
64/32
F0000h–F7FFFh
SA38
0011111xxx
64/32
F8000h–FFFFFh
SA39
0100000xxx
64/32
F9000h–107FFFh
SA40
0100001xxx
64/32
108000h–10FFFFh
SA41
0100010xxx
64/32
110000h–117FFFh
SA42
0101011xxx
64/32
118000h–11FFFFh
SA43
0100100xxx
64/32
120000h–127FFFh
SA44
0100101xxx
64/32
128000h–12FFFFh
SA45
0100110xxx
64/32
130000h–137FFFh
SA46
0100111xxx
64/32
138000h–13FFFFh
SA47
0101000xxx
64/32
140000h–147FFFh
SA48
0101001xxx
64/32
148000h–14FFFFh
SA49
0101010xxx
64/32
150000h–157FFFh
SA50
0101011xxx
64/32
158000h–15FFFFh
SA51
0101100xxx
64/32
160000h–167FFFh
SA52
0101101xxx
64/32
168000h–16FFFFh
SA53
0101110xxx
64/32
170000h–177FFFh
SA54
0101111xxx
64/32
178000h–17FFFFh
SA55
0110000xxx
64/32
180000h–187FFFh
SA56
0110001xxx
64/32
188000h–18FFFFh
SA57
0110010xxx
64/32
190000h–197FFFh
SA58
0110011xxx
64/32
198000h–19FFFFh
Bank 2
November 17, 2003
(x16)
Address Range
SA59
0100100xxx
64/32
1A0000h–1A7FFFh
SA60
0110101xxx
64/32
1A8000h–1AFFFFh
SA61
0110110xxx
64/32
1B0000h–1B7FFFh
SA62
0110111xxx
64/32
1B8000h–1BFFFFh
SA63
0111000xxx
64/32
1C0000h–1C7FFFh
SA64
0111001xxx
64/32
1C8000h–1CFFFFh
SA65
0111010xxx
64/32
1D0000h–1D7FFFh
SA66
0111011xxx
64/32
1D8000h–1DFFFFh
SA67
0111100xxx
64/32
1E0000h–1E7FFFh
SA68
0111101xxx
64/32
1E8000h–1EFFFFh
SA69
0111110xxx
64/32
1F0000h–1F7FFFh
SA70
0111111xxx
64/32
1F8000h–1FFFFFh
Am75DL9608HG
15
A D V A N C E
Table 2.
Bank
Bank 3
16
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA71
1000000xxx
64/32
200000h–207FFFh
SA72
1000001xxx
64/32
208000h–20FFFFh
SA73
1000010xxx
64/32
210000h–217FFFh
SA74
1000011xxx
64/32
218000h–21FFFFh
SA75
1000100xxx
64/32
220000h–227FFFh
SA76
1000101xxx
64/32
228000h–22FFFFh
SA77
1000110xxx
64/32
230000h–237FFFh
SA78
1000111xxx
64/32
238000h–23FFFFh
SA79
1001000xxx
64/32
240000h–247FFFh
SA80
1001001xxx
64/32
248000h–24FFFFh
SA81
1001010xxx
64/32
250000h–257FFFh
SA82
1001011xxx
64/32
258000h–25FFFFh
SA83
1001100xxx
64/32
260000h–267FFFh
SA84
1001101xxx
64/32
268000h–26FFFFh
SA85
1001110xxx
64/32
270000h–277FFFh
SA86
1001111xxx
64/32
278000h–27FFFFh
SA87
1010000xxx
64/32
280000h–28FFFFh
SA88
1010001xxx
64/32
288000h–28FFFFh
SA89
1010010xxx
64/32
290000h–297FFFh
SA90
1010011xxx
64/32
298000h–29FFFFh
SA91
1010100xxx
64/32
2A0000h–2A7FFFh
SA92
1010101xxx
64/32
2A8000h–2AFFFFh
SA93
1010110xxx
64/32
2B0000h–2B7FFFh
SA94
1010111xxx
64/32
2B8000h–2BFFFFh
SA95
1011000xxx
64/32
2C0000h–2C7FFFh
SA96
1011001xxx
64/32
2C8000h–2CFFFFh
SA97
1011010xxx
64/32
2D0000h–2D7FFFh
SA98
1011011xxx
64/32
2D8000h–2DFFFFh
SA99
1011100xxx
64/32
2E0000h–2E7FFFh
SA100
1011101xxx
64/32
2E8000h–2EFFFFh
SA101
1011110xxx
64/32
2F0000h–2FFFFFh
SA102
1011111xxx
64/32
2F8000h–2FFFFFh
SA103
1100000xxx
64/32
300000h–307FFFh
SA104
1100001xxx
64/32
308000h–30FFFFh
SA105
1100010xxx
64/32
310000h–317FFFh
SA106
1100011xxx
64/32
318000h–31FFFFh
SA107
1100100xxx
64/32
320000h–327FFFh
SA108
1100101xxx
64/32
328000h–32FFFFh
SA109
1100110xxx
64/32
330000h–337FFFh
SA110
1100111xxx
64/32
338000h–33FFFFh
SA111
1101000xxx
64/32
340000h–347FFFh
SA112
1101001xxx
64/32
348000h–34FFFFh
SA113
1101010xxx
64/32
350000h–357FFFh
SA114
1101011xxx
64/32
358000h–35FFFFh
SA115
1101100xxx
64/32
360000h–367FFFh
SA116
1101101xxx
64/32
368000h–36FFFFh
SA117
1101110xxx
64/32
370000h–377FFFh
SA118
1101111xxx
64/32
378000h–37FFFFh
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 2.
Bank
Bank 4
I N F O R M A T I O N
Am29DL640H Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA119
1110000xxx
64/32
380000h–387FFFh
SA120
1110001xxx
64/32
388000h–38FFFFh
SA121
1110010xxx
64/32
390000h–397FFFh
SA122
1110011xxx
64/32
398000h–39FFFFh
SA123
1110100xxx
64/32
3A0000h–3A7FFFh
SA124
1110101xxx
64/32
3A8000h–3AFFFFh
SA125
1110110xxx
64/32
3B0000h–3B7FFFh
SA126
1110111xxx
64/32
3B8000h–3BFFFFh
SA127
1111000xxx
64/32
3C0000h–3C7FFFh
SA128
1111001xxx
64/32
3C8000h–3CFFFFh
SA129
1111010xxx
64/32
3D0000h–3D7FFFh
SA130
1111011xxx
64/32
3D8000h–3DFFFFh
SA131
1111100xxx
64/32
3E0000h–3E7FFFh
SA132
1111101xxx
64/32
3E8000h–3EFFFFh
SA133
1111110xxx
64/32
3F0000h–3F7FFFh
SA134
1111111000
8/4
3F8000h–3F8FFFh
SA135
1111111001
8/4
3F9000h–3F9FFFh
SA136
1111111010
8/4
3FA000h–3FAFFFh
SA137
1111111011
8/4
3FB000h–3FBFFFh
SA138
1111111100
8/4
3FC000h–3FCFFFh
SA139
1111111101
8/4
3FD000h–3FDFFFh
SA140
1111111110
8/4
3FE000h–3FEFFFh
SA141
1111111111
8/4
3FF000h–3FFFFFh
Note: The address range is A21:A0
Table 3.
Am29DL640H Bank Address
Bank
1
2
3
4
A21–A19
000
001, 010, 011
100, 101, 110
111
Table 4.
November 17, 2003
Am29DL640H SecSi™ Sector Addresses
Device
Sector Size
(x16)
Address Range
Am29DL640H
256 bytes
00000h–0007Fh
Am75DL9608HG
17
A D V A N C E
Bank 2
Bank 3
Bank 4
Table 5.
18
I N F O R M A T I O N
Am29DL320G Top Boot Sector Addresses
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
SA0
000000xxx
64/32
000000h–07FFFh
SA1
000001xxx
64/32
008000h–0FFFFh
SA2
000010xxx
64/32
010000h–17FFFh
SA3
000011xxx
64/32
018000h–01FFFFh
SA4
000100xxx
64/32
020000h–027FFFh
SA5
000101xxx
64/32
028000h–02FFFFh
SA6
000110xxx
64/32
030000h–037FFFh
SA7
000111xxx
64/32
038000h–03FFFFh
SA8
001000xxx
64/32
040000h–047FFFh
SA9
001001xxx
64/32
048000h–04FFFFh
SA10
001010xxx
64/32
050000h–057FFFh
SA11
001011xxx
64/32
058000h–05FFFFh
SA12
001100xxx
64/32
060000h–067FFFh
SA13
001101xxx
64/32
068000h–06FFFFh
SA14
001110xxx
64/32
070000h–077FFFh
SA15
001111xxx
64/32
078000h–07FFFFh
SA16
010000xxx
64/32
080000h–087FFFh
SA17
010001xxx
64/32
088000h–08FFFFh
SA18
010010xxx
64/32
090000h–097FFFh
SA19
010011xxx
64/32
098000h–09FFFFh
SA20
010100xxx
64/32
0A0000h–0A7FFFh
SA21
010101xxx
64/32
0A8000h–0AFFFFh
SA22
010110xxx
64/32
0B0000h–0B7FFFh
SA23
010111xxx
64/32
0B8000h–0BFFFFh
SA24
011000xxx
64/32
0C0000h–0C7FFFh
SA25
011001xxx
64/32
0C8000h–0CFFFFh
SA26
011010xxx
64/32
0D0000h–0D7FFFh
SA27
011011xxx
64/32
0D8000h–0DFFFFh
SA28
011100xxx
64/32
0E0000h–0E7FFFh
SA29
011101xxx
64/32
0E8000h–0EFFFFh
SA30
011110xxx
64/32
0F0000h–0F7FFFh
SA31
011111xxx
64/32
0F8000h–0FFFFFh
SA32
100000xxx
64/32
100000h–107FFFh
SA33
100001xxx
64/32
108000h–10FFFFh
SA34
100010xxx
64/32
110000h–117FFFh
SA35
100011xxx
64/32
118000h–11FFFFh
SA36
100100xxx
64/32
120000h–127FFFh
SA37
100101xxx
64/32
128000h–12FFFFh
SA38
100110xxx
64/32
130000h–137FFFh
SA39
100111xxx
64/32
138000h–13FFFFh
SA40
101000xxx
64/32
140000h–147FFFh
SA41
101001xxx
64/32
148000h–14FFFFh
SA42
101010xxx
64/32
150000h–157FFFh
SA43
101011xxx
64/32
158000h–15FFFFh
SA44
101100xxx
64/32
160000h–167FFFh
SA45
101101xxx
64/32
168000h–16FFFFh
SA46
101110xxx
64/32
170000h–177FFFh
SA47
101111xxx
64/32
178000h–17FFFFh
Am75DL9608HG
(x16)
Address Range
November 17, 2003
A D V A N C E
Bank 1
Bank 2 (continued)
Table 5.
I N F O R M A T I O N
Am29DL320G Top Boot Sector Addresses (Continued)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA48
110000xxx
64/32
180000h–187FFFh
SA49
110001xxx
64/32
188000h–18FFFFh
SA50
110010xxx
64/32
190000h–197FFFh
SA51
110011xxx
64/32
198000h–19FFFFh
SA52
110100xxx
64/32
1A0000h–1A7FFFh
SA53
110101xxx
64/32
1A8000h–1AFFFFh
SA54
110110xxx
64/32
1B0000h–1B7FFFh
SA55
110111xxx
64/32
1B8000h–1BFFFFh
SA56
111000xxx
64/32
1C0000h–1C7FFFh
SA57
111001xxx
64/32
1C8000h–1CFFFFh
SA58
111010xxx
64/32
1D0000h–1D7FFFh
SA59
111011xxx
64/32
1D8000h–1DFFFFh
SA60
111100xxx
64/32
1E0000h–1E7FFFh
SA61
111101xxx
64/32
1E8000h–1EFFFFh
SA62
111110xxx
64/32
1F0000h–1F7FFFh
SA63
111111000
8/4
1F8000h–1F8FFFh
SA64
111111001
8/4
1F9000h–1F9FFFh
SA65
111111010
8/4
1FA000h–1FAFFFh
SA66
111111011
8/4
1FB000h–1FBFFFh
SA67
111111100
8/4
1FC000h–1FCFFFh
SA68
111111101
8/4
1FD000h–1FDFFFh
SA69
111111110
8/4
1FE000h–1FEFFFh
SA70
111111111
8/4
1FF000h–1FFFFFh
Note: The address range is A20:A0.
Table 6.
Am29DL320G Top Boot SecSi Sector Addresses
TM
Device
Sector Address
A20–A12
Sector Size
(Bytes/Words)
(x16)
Address Range
Am29DL320GT
111111xxx
256/128
1FF000h–1FF07Fh
November 17, 2003
Am75DL9608HG
19
A D V A N C E
Bank 3
Bank 2
Bank 1
Table 7.
20
I N F O R M A T I O N
Am29DL320G Bottom Boot Sector Addresses
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA0
000000000
8/4
000000h–000FFFh
SA1
000000001
8/4
001000h–001FFFh
SA2
000000010
8/4
002000h–002FFFh
SA3
000000011
8/4
003000h–003FFFh
SA4
000000100
8/4
004000h–004FFFh
SA5
000000101
8/4
005000h–005FFFh
SA6
000000110
8/4
006000h–006FFFh
SA7
000000111
8/4
007000h–007FFFh
SA8
000001xxx
64/32
008000h–00FFFFh
SA9
000010xxx
64/32
010000h–017FFFh
SA10
000011xxx
64/32
018000h–01FFFFh
SA11
000100xxx
64/32
020000h–027FFFh
SA12
000101xxx
64/32
028000h–02FFFFh
SA13
000110xxx
64/32
030000h–037FFFh
SA14
000111xxx
64/32
038000h–03FFFFh
SA15
001000xxx
64/32
040000h–047FFFh
SA16
001001xxx
64/32
048000h–04FFFFh
SA17
001010xxx
64/32
050000h–057FFFh
SA18
001011xxx
64/32
058000h–05FFFFh
SA19
001100xxx
64/32
060000h–067FFFh
SA20
001101xxx
64/32
068000h–06FFFFh
SA21
001110xxx
64/32
070000h–077FFFh
SA22
001111xxx
64/32
078000h–07FFFFh
SA23
010000xxx
64/32
080000h–087FFFh
SA24
010001xxx
64/32
088000h–08FFFFh
SA25
010010xxx
64/32
090000h–097FFFh
SA26
010011xxx
64/32
098000h–09FFFFh
SA27
010100xxx
64/32
0A0000h–0A7FFFh
SA28
010101xxx
64/32
0A8000h–0AFFFFh
SA29
010110xxx
64/32
0B0000h–0B7FFFh
SA30
010111xxx
64/32
0B8000h–0BFFFFh
SA31
011000xxx
64/32
0C0000h–0C7FFFh
SA32
011001xxx
64/32
0C8000h–0CFFFFh
SA33
011010xxx
64/32
0D0000h–0D7FFFh
SA34
011011xxx
64/32
0D8000h–0DFFFFh
SA35
011100xxx
64/32
0E0000h–0E7FFFh
SA36
011101xxx
64/32
0E8000h–0EFFFFh
SA37
011110xxx
64/32
0F0000h–0F7FFFh
SA38
011111xxx
64/32
SA39
100000xxx
64/32
0F8000h–0FFFFFh
100000h–107FFFh
SA40
100001xxx
64/32
108000h–10FFFFh
SA41
100010xxx
64/32
110000h–117FFFh
SA42
100011xxx
64/32
118000h–11FFFFh
SA43
100100xxx
64/32
120000h–127FFFh
SA44
100101xxx
64/32
128000h–12FFFFh
SA45
100110xxx
64/32
130000h–137FFFh
SA46
100111xxx
64/32
138000h–13FFFFh
SA47
101000xxx
64/32
140000h–147FFFh
Am75DL9608HG
November 17, 2003
A D V A N C E
Bank 4
Bank 3 (continued)
Table 7.
I N F O R M A T I O N
Am29DL320G Bottom Boot Sector Addresses (Continued)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x16)
Address Range
SA48
101001xxx
64/32
148000h–14FFFFh
SA49
101010xxx
64/32
150000h–157FFFh
SA50
101011xxx
64/32
158000h–15FFFFh
SA51
101100xxx
64/32
160000h–167FFFh
SA52
101101xxx
64/32
168000h–16FFFFh
SA53
101110xxx
64/32
170000h–177FFFh
SA54
101111xxx
64/32
178000h–17FFFFh
SA55
111000xxx
64/32
180000h–187FFFh
SA56
110001xxx
64/32
188000h–18FFFFh
SA57
110010xxx
64/32
190000h–197FFFh
SA58
110011xxx
64/32
198000h–19FFFFh
SA59
110100xxx
64/32
1A0000h–1A7FFFh
SA60
110101xxx
64/32
1A8000h–1AFFFFh
SA61
110110xxx
64/32
1B0000h–1B7FFFh
SA62
110111xxx
64/32
1B8000h–1BFFFFh
SA63
111000xxx
64/32
1C0000h–1C7FFFh
SA64
111001xxx
64/32
1C8000h–1CFFFFh
SA65
111010xxx
64/32
1D0000h–1D7FFFh
SA66
111011xxx
64/32
1D8000h–1DFFFFh
SA67
111100xxx
64/32
1E0000h–1E7FFFh
SA68
111101xxx
64/32
1E8000h–1EFFFFh
SA69
111110xxx
64/32
1F0000h–1F7FFFh
SA70
111111xxx
64/32
1F8000h–1FFFFFh
Note: The address range is A20:A0
Table 8.
Am29DL320G Bottom Boot SecSi Sector Addresses
TM
Device
Sector Address
A20–A12
Sector Size
(Bytes/Words)
(x16)
Address Range
Am29DL320GB
000000xxx
256/128
00000h–00007Fh
November 17, 2003
Am75DL9608HG
21
A D V A N C E
I N F O R M A T I O N
Sector/Sector Block Protection
and Unprotection
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
9).
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
Table 9. Am29DL640H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector
A21–A12
Sector/
Sector Block Size
SA0
0000000000
8 Kbytes
SA1
0000000001
8 Kbytes
SA2
0000000010
8 Kbytes
SA3
8 Kbytes
SA4
0000000100
8 Kbytes
SA5
0000000101
8 Kbytes
SA6
0000000110
8 Kbytes
SA7
0000000111
8 Kbytes
SA8–SA10
0000001XXX,
0000010XXX,
0000011XXX,
192 (3x64) Kbytes
SA11–SA14
00001XXXXX
256 (4x64) Kbytes
SA15–SA18
00010XXXXX
256 (4x64) Kbytes
SA19–SA22
22
0000000011
00011XXXXX
256 (4x64) Kbytes
SA23–SA26
00100XXXXX
256 (4x64) Kbytes
SA27-SA30
00101XXXXX
256 (4x64) Kbytes
SA31-SA34
00110XXXXX
256 (4x64) Kbytes
SA35-SA38
00111XXXXX
256 (4x64) Kbytes
Sector
A21–A12
Sector/
Sector Block Size
SA39-SA42
01000XXXXX
256 (4x64) Kbytes
SA43-SA46
01001XXXXX
256 (4x64) Kbytes
SA47-SA50
01010XXXXX
256 (4x64) Kbytes
SA51-SA54
01011XXXXX
256 (4x64) Kbytes
SA55–SA58
01100XXXXX
256 (4x64) Kbytes
SA59–SA62
01101XXXXX
256 (4x64) Kbytes
SA63–SA66
01110XXXXX
256 (4x64) Kbytes
SA67–SA70
01111XXXXX
256 (4x64) Kbytes
SA71–SA74
10000XXXXX
256 (4x64) Kbytes
SA75–SA78
10001XXXXX
256 (4x64) Kbytes
SA79–SA82
10010XXXXX
256 (4x64) Kbytes
SA83–SA86
10011XXXXX
256 (4x64) Kbytes
SA87–SA90
10100XXXXX
256 (4x64) Kbytes
SA91–SA94
10101XXXXX
256 (4x64) Kbytes
SA95–SA98
10110XXXXX
256 (4x64) Kbytes
SA99–SA102
10111XXXXX
256 (4x64) Kbytes
SA103–SA106
11000XXXXX
256 (4x64) Kbytes
SA107–SA110
11001XXXXX
256 (4x64) Kbytes
SA111–SA114
11010XXXXX
256 (4x64) Kbytes
SA115–SA118
11011XXXXX
256 (4x64) Kbytes
SA119–SA122
11100XXXXX
256 (4x64) Kbytes
SA123–SA126
11101XXXXX
256 (4x64) Kbytes
SA127–SA130
11110XXXXX
256 (4x64) Kbytes
SA131–SA133
1111100XXX,
1111101XXX,
1111110XXX
192 (3x64) Kbytes
SA134
1111111000
8 Kbytes
SA135
1111111001
8 Kbytes
SA136
1111111010
8 Kbytes
SA137
1111111011
8 Kbytes
SA138
1111111100
8 Kbytes
SA139
1111111101
8 Kbytes
SA140
1111111110
8 Kbytes
SA141
1111111111
8 Kbytes
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
Table 10. Am29DL320G Top Boot Sector/Sector
Block Addresses for Protection/Unprotection
Sector
A20–A12
Sector/
Sector Block Size
SA0
000000XXX
64 Kbytes
SA1-SA3
000001XXX,
000010XXX
000011XXX
192 (3x64) Kbytes
SA4-SA7
0001XXXXX
256 (4x64) Kbytes
SA8-SA11
0010XXXXX
Table 11. Am29DL320G Bottom Boot
Sector/Sector Block Addresses
for Protection/Unprotection
Sector
A20–A12
Sector/Sector Block
Size
SA70
111111XXX
64 Kbytes
SA69-SA67
111110XXX,
111101XXX,
111100XXX
192 (3x64) Kbytes
256 (4x64) Kbytes
SA66-SA63
1110XXXXX
256 (4x64) Kbytes
1101XXXXX
256 (4x64) Kbytes
SA12-SA15
0011XXXXX
256 (4x64) Kbytes
SA62-SA59
SA16-SA19
0100XXXXX
256 (4x64) Kbytes
SA58-SA55
1100XXXXX
256 (4x64) Kbytes
SA20-SA23
0101XXXXX
256 (4x64) Kbytes
SA54-SA51
1011XXXXX
256 (4x64) Kbytes
1010XXXXX
256 (4x64) Kbytes
SA24-SA27
0110XXXXX
256 (4x64) Kbytes
SA50-SA47
SA28-SA31
0111XXXXX
256 (4x64) Kbytes
SA46-SA43
1001XXXXX
256 (4x64) Kbytes
1000XXXXX
256 (4x64) Kbytes
SA32-SA35
1000XXXXX
256 (4x64) Kbytes
SA42-SA39
SA36-SA39
1001XXXXX
256 (4x64) Kbytes
SA38-SA35
0111XXXXX
256 (4x64) Kbytes
SA40-SA43
1010XXXXX
256 (4x64) Kbytes
SA34-SA31
0110XXXXX
256 (4x64) Kbytes
SA30-SA27
0101XXXXX
256 (4x64) Kbytes
SA44-SA47
1011XXXXX
256 (4x64) Kbytes
SA48-SA51
1100XXXXX
256 (4x64) Kbytes
SA26-SA23
0100XXXXX
256 (4x64) Kbytes
1101XXXXX
256 (4x64) Kbytes
SA22–SA19
0011XXXXX
256 (4x64) Kbytes
SA56-SA59
1110XXXXX
256 (4x64) Kbytes
SA18-SA15
0010XXXXX
256 (4x64) Kbytes
SA14-SA11
0001XXXXX
256 (4x64) Kbytes
SA60-SA62
111100XXX,
111101XXX,
111110XXX
192 (3x64) Kbytes
SA10-SA8
192 (3x64) Kbytes
SA63
111111000
8 Kbytes
000011XXX,
000010XXX,
000001XXX
SA64
111111001
8 Kbytes
SA7
000000111
8 Kbytes
SA65
111111010
8 Kbytes
SA6
000000110
8 Kbytes
000000101
8 Kbytes
SA52-SA55
SA66
111111011
8 Kbytes
SA5
SA67
111111100
8 Kbytes
SA4
000000100
8 Kbytes
000000011
8 Kbytes
SA68
111111101
8 Kbytes
SA3
SA69
111111110
8 Kbytes
SA2
000000010
8 Kbytes
SA70
111111111
8 Kbytes
SA1
000000001
8 Kbytes
SA0
000000000
8 Kbytes
November 17, 2003
Am75DL9608HG
23
A D V A N C E
I N F O R M A T I O N
Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows
the algorithms and Figure 24 shows the timing diagram. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously
protected sectors must be individually re-protected. To
change data in protected sectors efficiently, the temporary sector unprotect function is available. See
“Temporary Sector Unprotect”.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See the Sector/Sector Block
Protection and Unprotection section for details.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting without using VID. This function is
one of two provided by the WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin while
the Am29DL640H is enabled (CE#f1), the device disables program and erase functions in sectors 0, 1,
140, and 141, independently of whether those sectors
were protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. Similarly, the two outermost boot sectors
(SA0 and 1 on bottom boot devices or SA69 and 70 on
top boot devices) on the Am29DL320G are protected
when VIL is asserted on the WP#/ACC pin while the
Am29DL320G is enabled (CE#f2).
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the aforementioned sectors
were last set to be protected or unprotected. That is,
sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in “Sector/Sector
Block Protection and Unprotection”.
24
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Table 12.
WP#
Input
Voltage
WP#/ACC Modes
Am29DL640H
Am29DL320G
VIL
Disables programming
and erasing in SA0,
SA1, SA140, and
SA141
Disables programming
and erasing in SA0 and
SA1 or SA69 and SA70
VIH
Enables programming
and erasing in SA0,
SA1, SA140, and
SA141
Enables programming
and erasing in SA0 and
SA1 or SA60 and SA70
VHH
Enables accelerated programming (ACC). See
“Accelerated Program Operation” on page 11.
Temporary Sector Unprotect
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
9).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 23 shows the timing diagrams, for this feature.
If the WP#/ACC pin is at VIL while the Am29DL640H is
enabled, sectors 0, 1, 140, and 141 of that device will
remain protected during the Temporary sector Unprotect mode. Similarly, If the WP#/ACC pin is at VIL while
the Am29DL320G is enabled, the two outermost boot
sectors (SA0 and 1 on bottom boot devices or SA69
and 70 on top boot devices) of that device will remain
protected during the Temporary sector Unprotect
mode.
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
the following sectors will remain protected: sectors 0, 1,
140, and 141 (Am29DL640H), sectors 0 and 1
(Am29DL320GB), or sectors 69 and 70
(Am29DL320GT).
2. All previously protected sectors are protected once
again.
Figure 1.
Temporary Sector Unprotect Operation
November 17, 2003
Am75DL9608HG
25
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Protect another
sector?
PLSCNT
= 1000?
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Sector Protect
complete
No
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Set up
next sector
address
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
26
In-System Sector Protect/Unprotect Algorithms
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
SecSi™ (Secured Silicon) Sector
SectorFlash Memory Region
Table 13. SecSi Sector Programming
Device
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and
uses a SecSi Sector Indicator Bit (DQ7) to indicate
whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.
AMD offers the device with the SecSi Sector either
fac t or y l ocke d or c u s t om e r l o ckabl e. T he fac tory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize the that
sector in any manner they choose. The customer-lockable version has the SecSi (Secured Silicon) Sector
Indicator Bit permanently set to a “0.” Thus, the SecSi
Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the SecSi Sector Secure Sector
through a command sequence (see “Enter SecSi™
Sector/Exit SecSi Sector Command Sequence”). After
the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by
using the addresses normally occupied by the boot
sectors. This mode of operation continues until the
system issues the Exit SecSi Sector command sequence, or until power is removed from the device.
Note that the ACC function and unlock bypass modes
are not available when the SecSi Sector is enabled.
On power-up, or following a hardware reset, the device
reverts to sending commands to the first 256 bytes of
Sector 0.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is preprogrammed with both a random number
and secure ESNs. See Table 13 for address location
details.
Data
Word Mode
Byte Mode
Random
number
000000h–
000007h
000000h–
00000Fh
8-byte
secure ESN
000008h–
00000Fh
000010h–
000020h
Am29DL320GB
(Bottom boot)
16-byte secure
ESN
000000h–
000007h
000000h–
00000Fh
Am29DL320GT
(Top boot)
16-byte secure
ESN
1FF000h–
1FF007Fh
3FE000h–
3FE0FFh
Am29DL640H
The device is available preprogrammed with one of the
following:
■ Random number and secure ESNs only
■ Customer code through the ExpressFlash service
■ Random number, secure ESNs, and customer code
through the ExpressFlash service.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s
factory with the SecSi Sector permanently locked.
Contact an AMD representative for details on using
AMD’s ExpressFlash service.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
If the security feature is not required, the SecSi Sector
can be treated as an additional Flash memory space.
The SecSi Sector can be read any number of times,
but can be programmed and locked only once. Note
that the accelerated programming (ACC) and unlock
bypass functions are not available when programming
the SecSi Sector.
The SecSi Sector area can be protected using one of
the following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
November 17, 2003
Am75DL9608HG
27
A D V A N C E
I N F O R M A T I O N
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle,
CE#f and WE# must be a logical zero while OE# is a
logical one.
START
RESET# =
VIH or VID
Wait 1 µs
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Power-Up Write Inhibit
If WE# = CE#f = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Remove VIH or VID
from RESET#
COMMON FLASH MEMORY INTERFACE
(CFI)
Write reset
command
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
SecSi Sector
Protect Verify
complete
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 22 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V CC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The
system can read CFI information at the addresses
given in Tables 14–17. To terminate reading CFI data,
the system must write the reset command.The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 14–17. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#f
or WE# do not initiate a write cycle.
28
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 14.
I N F O R M A T I O N
Am29DL640H CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 15.
Description
Am29DL640H System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0003h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
November 17, 2003
Description
Am75DL9608HG
29
A D V A N C E
Table 16.
Addresses
(Word Mode)
30
Addresses
(Byte Mode)
I N F O R M A T I O N
Am29DL640H Device Geometry Definition
Data
Description
N
27h
4Eh
0017h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 17.
I N F O R M A T I O N
Am29DL640H Primary Vendor-Specific
Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
Description
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800
mode
4Ah
94h
0077h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
4Fh
9Eh
0001h
50h
A0h
0001h
57h
AEh
0004h
58h
B0h
0017h
59h
B2h
0030h
5Ah
B4h
0030h
November 17, 2003
00h = Uniform device, 01h = 8 x 8 Kbyte Sectors, Top And Bottom Boot
with Write Protect, 02h = Bottom Boot Device, 03h = Top Boot Device,
04h = Both Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Am75DL9608HG
31
A D V A N C E
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
5Bh
B6h
0017h
Table 18.
I N F O R M A T I O N
Description
Bank 4 Region Information
X = Number of Sectors in Bank 4
Am29DL320G CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 19.
Description
Am29DL320G System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
32
Description
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 20.
Addresses
(Word Mode)
Addresses
(Byte Mode)
I N F O R M A T I O N
Am29DL320G Device Geometry Definition
Data
Description
N
27h
4Eh
0016h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
November 17, 2003
Am75DL9608HG
33
A D V A N C E
Table 21.
I N F O R M A T I O N
Am29DL320G Primary Vendor-Specific
Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0001h
Silicon Revision Number
00h = 0.23 µm, 01h = 0.17 µm
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0038h
Simultaneous Operation
Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
4Fh
9Eh
000Xh
34
Description
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 22 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence may
place the device in an unknown state. A reset command is then required to return the device to reading
array data.
All addresses are latched on the falling edge of WE#
or CE#f, whichever happens later. All data is latched
on the rising edge of WE# or CE#f, whichever happens first. Refer to the Flash AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding ban k enters the erase-suspend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
section for more information. The Read-Only Operations table provides the read parameters, and Figure
14 shows the timing diagram.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
co m m an d re tur ns th a t ba nk to the e ra s e- s us pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Reset Command
Table 22 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SADD). Table 2 shows the address
range and bank number associated with each sector.
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands
until the operation is complete.
November 17, 2003
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Am75DL9608HG
35
A D V A N C E
I N F O R M A T I O N
Sector command sequence. The device continues to
access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or embedded Erase algorithm.
Table 22 shows the address and data requirements for
both command sequences. Note that the ACC function
and unlock bypass modes are not available when the
SecSi sector is enabled. See also “SecSi™ (Secured
Silicon) Sector SectorFlash Memory Region” for further
information.
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 22 shows the address
and data requirements for the byte program command
sequence. Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a program operation is in progress.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status
bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
36
DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Table 22 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence (See Table 12).
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V HH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Sector Erase Command Sequence
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 22 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 22
shows the address and data requirements for the chip
erase command sequence. Note that the SecSi Sector, autoselect, and CFI functions are unavailable
when a erase operation is in progress.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Flash Write Operation Status
section for information on these status bits.
November 17, 2003
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 22 shows the address and data requirements for the sector erase comm a n d s e q u e n c e. N o te t h a t t h e S e cS i S e ct o r,
autoselect, and CFI functions are unavailable when a
erase operation is in progress.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode. The system must rewrite
the command sequence and any additional addresses
and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
Am75DL9608HG
37
A D V A N C E
I N F O R M A T I O N
data from the non-erasing bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Flash Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
START
No
Embedded
Erase
algorithm
in progress
Yes
Erasure Completed
Notes:
1. See Table 22 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Erase Operation
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Flash Write Operation Status section for
more information.
Data = FFh?
Figure 5.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Flash Write Operation Status section for
information on these status bits.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Erase Suspend/Erase Resume
Commands
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
Refer to the Sector/Sector Block Protection and Unprotection and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-suspended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
38
Am75DL9608HG
November 17, 2003
A D V A N C E
Cycles
Table 22.
Command
Sequence
(Note 1)
Read (Note 6)
Reset (Note 7)
1
1
I N F O R M A T I O N
Am29DL640H and Am29DL320G Command Definitions
First
Addr Data
RA
RD
XXX
F0
Second
Addr Data
Bus Cycles (Notes 2–5)
Third
Fourth
Addr
Data
Addr
Data
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X00
01
Device ID (Note 9)
SecSi Sector Factory
Protect (Note 10)
Sector/Sector Block
Protect Verify
(Note 11)
Word
6
555
AA
2AA
55
(BA)555
90
(BA)X01
7E
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X03 80/00
Word
4
555
AA
2AA
55
(BA)555
90
(SADD)
00/01
X02
Enter SecSi Sector Region
Word
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
Word
4
555
AA
2AA
55
555
90
XXX
00
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
Word
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 12)
Unlock Bypass Reset (Note 13)
Chip Erase
Word
Sector Erase
Word
Erase Suspend (Note 14)
Erase Resume (Note 15)
2
2
6
6
1
1
XXX
XXX
555
555
BA
BA
A0
90
AA
AA
B0
30
PA
XXX
2AA
2AA
PD
00
55
55
555
555
80
80
555
555
AA
AA
CFI Query (Note 16)
1
55
98
Autoselect (Note 8)
Manufacturer ID
Word
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE#f pulse, whichever happens
later.
Notes:
1. See Tables 1 to 2 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5. Unless otherwise noted, address bits A21–A12 are don’t cares for
unlock and command cycles, unless SADD or PA is required.
6. No unlock or command cycles required when bank is reading
array data.
7. The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high (while
the bank is providing status information).
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
9. The device ID must be read across the fourth, fifth, and sixth
cycles. At address x0E, the data is 02h for Am29DL640H and 0Ah
for Am29DL320G. At address x0F, the data is 01h for
November 17, 2003
Fifth
Addr
Data
Sixth
Addr
Data
(BA)X0E 02/0A (BA)X0F 00/01
2AA
2AA
55
55
555
SADD
10
30
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE#f pulse, whichever happens first.
SADD = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A21–A12 uniquely select any sector. Refer to
Table 2 for information on sector addresses.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased. Address bits A21–A19 select a
bank. Refer to Table 3 for information on sector addresses.
10.
11.
12.
13.
14.
15.
16.
Am29DL640H and Am29DL320G (top boot) and 00h for
Am29DL320G (bottom boot).
For Am29DL640H, the data is 80h for factory locked, 40h for
customer locked and 00h for not locked. For Am29DL320G, they
are 81H and 01h respectively.
The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am75DL9608HG
39
A D V A N C E
I N F O R M A T I O N
FLASH WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 23 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still
invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for
byte mode) will appear on successive read cycles.
Table 23 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure 20
in the Flash AC Characteristics section shows the
Data# Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
START
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the
read mode.
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
40
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycles. Just prior to the completion of an
Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 (DQ7–DQ0
in byte mode) while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am75DL9608HG
Figure 6.
Data# Polling Algorithm
November 17, 2003
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 23 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 21 in
the “Flash AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II.
START
Read Byte
(DQ7–DQ0)
Address =VA
Table 23 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
Yes
No
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
November 17, 2003
No
Am75DL9608HG
Toggle Bit Algorithm
41
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE#f to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 23 to compare outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 21 shows the toggle bit timing diagram. Figure
22 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for byte
mode) at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note
and store the value of the toggle bit after the first read.
After the second read, the system would compare the
new value of the toggle bit with the first. If the toggle bit
is not toggling, the device has completed the program
or erase operation. The system can read array data on
DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycle.
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
Table 23 shows the status of DQ3 relative to the other
status bits.
42
Am75DL9608HG
November 17, 2003
A D V A N C E
Table 23.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
I N F O R M A T I O N
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
November 17, 2003
Am75DL9608HG
43
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . –40°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
–2.0 V
WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V
20 ns
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 7. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 8.
2. Minimum DC input voltage on pins RESET#, and
WP# /ACC is –0 .5 V. D ur ing volt age trans itions,
WP#/ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 7. Maximum DC input
voltage on pin RESET# is +12.5 V which may overshoot
to +14.0 V for periods up to 20 ns. Maximum DC input
voltage on WP#/ACC is +9.5 V which may overshoot to
+12.0 V for periods up to 20 ns.
Figure 8. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
VCCf/VCCs Supply Voltages
VCCf/VCCs for standard voltage range . . 2.7 V to 3.3 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
44
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
VIN = VSS to VCC,
VCC = VCC max
ILI
Input Load Current
ILIT
RESET# Input Load Current
VCC = VCC max; RESET# = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ILR
Reset Leakage Current
VCC = VCC max; RESET# = 12.5 V
ILIA
ACC Input Leakage Current
VCC = VCC max, WP#/ACC = VACC max
Max
Unit
±1.0
µA
35
µA
±1.0
µA
35
µA
35
µA
5 MHz
10
16
1 MHz
2
4
15
30
mA
ICC1f
Flash VCC Active Read Current
(Notes 1, 2)
ICC2f
Flash VCC Active Write Current (Notes 2, 3) CE#f = VIL, OE# = VIH, WE# = VIL
ICC3f
Flash VCC Standby Current (Note 2)
VCCf = VCC max, CE#f, RESET#,
WP#/ACC = VCCf ± 0.3 V
0.2
10
µA
ICC4f
Flash VCC Reset Current (Note 2)
VCCf = VCC max, RESET# = VSS ± 0.3 V,
WP#/ACC = VCCf ± 0.3 V
0.2
10
µA
ICC5f
Flash VCC Current Automatic Sleep Mode
(Notes 2, 4)
VCCf = VCC max, VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
10
µA
ICC6f
Flash VCC Active Read-While-Program
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
21
45
mA
ICC7f
Flash VCC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
21
45
mA
ICC8f
Flash VCC Active
Program-While-Erase-Suspended Current
(Notes 2, 5)
CE#f = VIL, OE#f = VIH
17
35
mA
CE#f = VIL, OE# = VIH, Word
Mode
mA
VIL
Input Low Voltage
–0.2
0.8
V
VIH
Input High Voltage
2.4
VCC + 0.2
V
VHH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
VID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOL = 2.0 mA, VCCf = VCCs = VCC min
IOH = –2.0 mA, VCCf = VCCs = VCC min
IOH = –100 µA, VCC = VCC min
Flash Low VCC Lock-Out Voltage (Note 5)
3. ICC active while Embedded Erase or Embedded Program is in
progress.
V
VCC–0.4
2.0
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
November 17, 2003
0.85 x
VCC
2.5
V
4. Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5. Not 100% tested.
6.
2 Flash stack together → double the current limit from 5 →10 µA
Am75DL9608HG
45
A D V A N C E
I N F O R M A T I O N
FLASH DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.3 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 11.
Typical ICC1 vs. Frequency
7.
46
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
IIO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ VCC – 0.2 V, VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
3
5
mA
ICC2s
Average Operating Current
Cycle time = Min., IIO = 0 mA,
100% duty, CE1#s = VIL, CE2s =
VIH, VIN = VIL = or VIH
12
25
mA
VIL
Input Low Voltage
–0.2
(Note 3)
0.4
V
VIH
Input High Voltage
2.2
VCC+0.2
(Note 2)
V
VOL
Output Low Voltage
IOL = 2.0 mA
0.4
V
VOH
Output High Voltage
IOH = –1.0 mA
ISB
Standby Current (TTL)
CE1#s = VIH, CE2 = VIL, Other
inputs = VIH or VIL
0.3
mA
ISB1
Standby Current (CMOS)
CE1#s=VIH, CE2= VIL:
Other inputs = VIH or VIL:
tA = 85°C, VCC = 3.0 V
60
µA
ISB2
Standby Current (CMOS)
CE1#s=VIH, CE2= VIL:
Other inputs = VIH or VIL:
tA = 85°C, VCC = 3.3 V
85
µA
2.2
V
Notes:
1. TA= –40° to 85°C, otherwise specified.
2.
3.
4.
5.
Overshoot: VCC+1.0V if pulse width ≤ 20 ns.
Undershoot: –1.0V if pulse width ≤ 20 ns.
Overshoot and undershoot are sampled, not 100% tested.
Stable power supply required 200 µs before device operation.
55
ISB
CMOS
(µA)
50
45
40
2.7
2.8
2.9
VCC
Figure 12.
Standby Current ISB CMOS
Notes:
At 70°, for reference only
2. Not 100% tested
1.
November 17, 2003
3. Sample Size of 5
Am75DL9608HG
47
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 24.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
All Speed Options
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 13.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 14.
48
Input Waveforms and Measurement Levels
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Pseudo SRAM CE#s Timing
Parameter
Test Setup
JEDEC
Std
Description
—
tCCR
CE#s Recover Time
—
Min
All Speeds
Unit
0
ns
CE#f
tCCR
tCCR
tCCR
tCCR
CE1#s
CE2s
Figure 15. Timing Diagram for Alternating
Between Pseudo SRAM to Flash
November 17, 2003
Am75DL9608HG
49
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Read-Only Operations
Parameter
All Speed
Options
Unit
Min
70
ns
CE#f, OE# = VIL
Max
70
ns
OE# = VIL
Max
70
ns
Output Enable to Output Delay
Max
30
ns
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE#f or
OE#, Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold Time
(Note 1)
Toggle and
Data# Polling
Min
10
ns
JEDEC
Std.
Description
Test Setup
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 24 for test specifications
3. Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC/2. The time from OE# high to the
data bus driven to VCC/2 is taken as tDF
.
tRC
Addresses Stable
Addresses
tACC
CE#f
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 16.
50
Read Operation Timings
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#f, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#f, OE#
RESET#
tRP
Figure 17.
November 17, 2003
Reset Timings
Am75DL9608HG
51
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
tAHT
Address Hold Time From CE#f or OE# high
during toggle bit polling
tDVWH
tDS
Data Setup Time
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time (CE#f to WE#)
Min
0
ns
tELWL
tCS
CE#f Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time (CE#f to WE#)
Min
0
ns
tWHEH
tCH
CE#f Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Am29DL640H
tWLAX
40
Min
Am29DL320G
ns
45
Min
Am29DL640H
0
ns
40
Min
Am29DL320G
ns
35
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
7
µs
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
52
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#f
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCCf
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 18.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 19.
November 17, 2003
tVHH
Accelerated Program Timing Diagram
Am75DL9608HG
53
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SADD
VA
555h for chip erase
tAH
CE#f
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCCf
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
2. These waveforms are for the word mode.
Figure 20.
54
Chip/Sector Erase Operation Timings
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#f
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 21.
CE#f Controlled Write Cycles
Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#f
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ6–DQ0
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 22.
November 17, 2003
Data# Polling Timings (During Embedded Algorithms)
Am75DL9608HG
55
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#f
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 23.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 24.
56
DQ2 vs. DQ6
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f
WE#
tRRB
tRSP
RY/BY#
Figure 25.
November 17, 2003
Temporary Sector Unprotect Timing Diagram
Am75DL9608HG
57
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
VID
VIH
RESET#
SADD,
A6, A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
Figure 26. Sector/Sector Block Protect and
Unprotect Timing Diagram
58
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Parameter
All Speed
Options
Unit
Min
70
ns
Address Setup Time
Min
0
ns
tAH
Address Hold Time
Min
40
ns
tDVEH
tDS
Data Setup Time
Min
40
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
40
ns
tEHEL
tCPH
CE#f Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
Typ
7
µs
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
tELAX
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
November 17, 2003
Am75DL9608HG
59
A D V A N C E
I N F O R M A T I O N
FLASH AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#f
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 27.
60
Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Power Up Time
When powering up the SRAM, maintain VCCs for 100 µs minimum with CE#1s at VIH.
Read Cycle
Parameter
Symbol
Speed
Description
Unit
55
70
tRC
Read Cycle Time
Min
55
70
ns
tAA
Address Access Time
Max
55
70
ns
tCO1, tCO2
Chip Enable to Output
Max
55
70
ns
tOE
Output Enable Access Time
Max
30
35
ns
tBA
LB#s, UB#s to Access Time
Max
55
70
ns
Chip Enable (CE1#s Low and CE2s High) to Low-Z
Output
Min
5
ns
tBLZ
UB#, LB# Enable to Low-Z Output
Min
5
ns
tOLZ
Output Enable to Low-Z Output
Min
5
ns
tHZ1, tHZ2
Chip Disable to High-Z Output
Max
20
25
ns
tBHZ
UB#s, LB#s Disable to High-Z Output
Max
20
25
ns
tOHZ
Output Disable to High-Z Output
Max
20
25
ns
tOH
Output Data Hold from Address Change
Min
tLZ1, tLZ2
10
ns
tRC
Address
tOH
Data Out
tAA
Data Valid
Previous Data Valid
Notes:
1. CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL
2. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 28.
November 17, 2003
Pseudo SRAM Read Cycle—Address Controlled
Am75DL9608HG
61
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Read Cycle
tRC
Address
tAA
tCO1
CE#1s
CE2s
tOH
tCO2
tHZ
tOE
OE#
tOLZ
tBLZ
Data Out
High-Z
tLZ
tOHZ
Data Valid
Notes:
1. WE# = VIH.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 29.
62
Pseudo SRAM Read Cycle
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Write Cycle
Parameter
Symbol
Speed
Description
Unit
55
70
tWC
Write Cycle Time
Min
55
70
ns
tCw
Chip Enable to End of Write
Min
45
55
ns
tAS
Address Setup Time
Min
tAW
Address Valid to End of Write
Min
45
55
ns
tBW
UB#s, LB#s to End of Write
Min
45
55
ns
tWP
Write Pulse Time
Min
45
55
ns
tWR
Write Recovery Time
Min
0
Min
0
tWHZ
Write to Output High-Z
Max
25
tDW
Data to Write Time Overlap
Min
40
ns
tDH
Data Hold from Write Time
Min
0
ns
tOW
End Write to Output Low-Z
Min
5
ns
0
ns
ns
ns
tWC
Address
tWR
tCW
(See Note 1)
CE1#s
tAW
CE2s
tCW
(See Note 1)
tWP
(See Note 4)
WE#
Data In
tAS
(See Note 3)
tDW
High-Z
High-Z
Data Valid
tWHZ
Data Out
tDH
tOW
Data Undefined
Notes:
1. WE# controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 30.
November 17, 2003
Pseudo SRAM Write Cycle—WE# Control
Am75DL9608HG
63
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
tAS (See Note 2 ) tCW
(See Note 3)
tWR (See Note 4)
CE1#s
tAW
CE2s
tBW
UB#s, LB#s
tWP
(See Note 5)
WE#
tDW
tDH
Data Valid
Data In
Data Out
High-Z
High-Z
Notes:
1. CE1#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE1#s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 31.
64
Pseudo SRAM Write Cycle—CE1#s Control
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
tCW
(See Note 2)
CE1#s
tWR (See Note 3)
tAW
tCW (See Note 2)
CE2s
UB#s, LB#s
tBW
tAS
(See Note 4)
WE#
tWP
(See Note 5)
tDW
Data In
Data Out
tDH
Data Valid
High-Z
High-Z
Notes:
1. UB#s and LB#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 32. Pseudo SRAM Write Cycle—
UB#s and LB#s Control
November 17, 2003
Am75DL9608HG
65
A D V A N C E
I N F O R M A T I O N
FLASH ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Typ (Note 1)
Max (Note 2)
Unit
0.4
5
sec
Am29DL640H
56
Am29DL320G
28
Chip Erase Time
sec
Accelerated Word Program Time
4
120
µs
Word Program Time
7
210
µs
Am29DL640H
28
84
Am29DL320G
14
42
Chip Program Time
(Note 3)
Comments
Excludes 00h
programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
22 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
BGA PACKAGE CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Input Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
11
14
pF
VOUT = 0
12
16
pF
COUT
Output Capacitance
CIN2
Control Pin Capacitance
VIN = 0
14
16
pF
CIN3
WP#/ACC Pin Capacitance
VIN = 0
17
20
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
66
Am75DL9608HG
November 17, 2003
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
FTA073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm
D1
A
D
eD
0.15 C
10
(2X)
9
8
SE 7
7
6
E
E1
5
4
eE
3
2
1
INDEX MARK
PIN A1
CORNER
M
B
10
TOP VIEW
L
K
J
H
G
F
E
D
C B
A
7
SD
0.15 C
(2X)
PIN A1
CORNER
BOTTOM VIEW
0.20 C
A A2
A1
C
0.08 C
SIDE VIEW
6
b
73X
0.15 M
0.08 M
C A B
C
NOTES:
PACKAGE
JEDEC
SYMBOL
FTA 073
N/A
11.60 mm x 8.00 mm
PACKAGE
MIN.
NOM.
MAX.
NOTE
A
---
---
1.40
PROFILE
A1
0.25
---
---
BALL HEIGHT
A2
1.00
---
1.11
BODY THICKNESS
D
11.60 BSC.
BODY SIZE
E
8.00 BSC.
8.80 BSC.
BODY SIZE
MATRIX FOOTPRINT
MD
7.20 BSC.
12
MATRIX FOOTPRINT
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
D1
E1
n
Ob
73
0.30
0.35
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.40
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
eE
0.80 BSC
BALL PITCH
eD
0.80 BSC
BALL PITCH
0.40 BSC
SOLDER BALL PLACEMENT
SD/SE
1.
A2,A3,A4,A5,A6,A7,A8,A9
B2,B3,B4,B7,B8,B9,C2,C9,C10
D1,D10,E1,E10,F5,F6,G5,G6
H1,H10,J1,J10,K1,K2,K9,K10
L2,L3,L4,L7,L8,L9
M2,M3,M4,M5,M6,M7,M8,M9
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
DEPOPULATED SOLDER BALL
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTION OR OTHER MEANS.
3159\38.14b
November 17, 2003
Am75DL9608HG
67
A D V A N C E
I N F O R M A T I O N
REVISION SUMMARY
Revision A (October 6, 2003)
Revision A+1 (November 17, 2003)
Initial release.
CMOS Compatible
Changed the test condition for the VOL to IOL = 2.0 mA.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
68
Am75DL9608HG
November 17, 2003