2STC5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2STA2121 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging 2STC5949 2STC5949 TO-264 Tube July 2008 Rev 3 1/8 www.st.com 8 2STC5949 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V Collector current 17 A Collector peak current (tP < 5ms) 34 A PTOT Total dissipation at Tc = 25°C 220 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 0.568 °C/W IC ICM TJ Table 3. Symbol Rthj-case 2/8 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case _____ __max 2STC5949 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 250 V 5 µA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 5 µA Collector-emitter breakdown IC = 50 mA V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-base breakdown voltage (IE = 0) Emitter-base breakdown V(BR)EBO(1) voltage (I = 0) C VCE(sat) (1) VBE (1) hFE fT IC = 100 µA IE = 1 mA Collector-emitter saturation IC = 8 A voltage Base-emitter on voltage DC current gain Transition frequency 250 V 250 V 6 V IB = 800 mA IC = 7 A V CE = 5 V IC = 1 A V CE = 5 V 80 IC = 7 A V CE = 5 V 35 IC = 1 A V CE = 5 V 3 V 1.5 V 160 25 MHz 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% 3/8 2STC5949 Electrical characteristics 2.1 4/8 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter on voltage 2STC5949 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 2STC5949 Package mechanical data TO-264 MECHANICAL DATA DIM. mm. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.80 5.20 0.189 0.205 D 2.50 3.10 0.098 0.122 E 0.50 0.60 0.85 0.020 0.24 0.033 F 0.90 1.00 1.25 0.036 0.039 0.049 G 10.30 11.50 0.406 G1 5.45 0.453 0.215 H 19.80 20.20 0.780 0.795 L3 25.80 26.20 1.016 1.031 L5 5.80 6.20 0.228 0.244 L7 19.50 20.50 0.768 0.807 N 2.30 2.70 0.091 0.106 R 4.7 5.10 0.185 0.201 DIA 3.10 3.50 0.122 0.138 MTO-264 rev.1 6/8 2STC5949 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 26-Nov-2007 1 Initial release 05-May-2008 2 New graphics. 11-Jul-2008 3 Updated figure 7. 7/8 2STC5949 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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