M54HC153 RAD-HARD DUAL 4 CHANNEL MULTIPLEXER ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 16ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 153 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9408-038 DESCRIPTION The M54HC153 is an high speed CMOS DUAL 4 CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. DILC-16 FPC-16 ORDER CODES PACKAGE FM EM DILC FPC M54HC153D M54HC153K M54HC153D1 M54HC153K1 Each of these data (1C0-1C3, 2C0-2C3) is selected by the two address inputs A and B. Separate strobe inputs (1G, 2G) are provided for each of the two four-line sections. The strobe input (nG) can be used to inhibit the data output; the output of M54HC153 is fixed at low level while the strobe input is held high. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION March 2004 1/9 M54HC153 IEC LOGIC SYMBOLS INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° SYMBOL 1, 15 14, 2 1G, 2G A, B 6, 5, 4, 3 7 9 10, 11, 12, 13 8 16 NAME AND FUNCTION Output Enable Inputs Common Data Select Inputs 1C0 to 1C3 Data Inputs From Source 1 1Y Multiplexer Output From Source 1 2Y Multiplexer Output From Source 2 2C0 to 2C3 Data Inputs From Source 2 GND Ground (0V) VCC Positive Supply Voltage TRUTH TABLE SELECT INPUTS DATA INPUTS STROBE OUTPUT Y B A C0 C1 C2 C3 G X L L L L H H H H X L L H H L L H H X L H X X X X X X X X X L H X X X X X X X X X L H X X X X X X X X X L H H L L L L L L L L X : Don’t Care 2/9 L L H L H L H L H M54HC153 LOGIC DIAGRAM This logic diagram has not be used to estimate propagation delays ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage -0.5 to VCC + 0.5 ± 20 V mA IIK DC Input Diode Current IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) ± 50 mA 300 mW -65 to +150 °C 265 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 3/9 M54HC153 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature Input Rise and Fall Time tr, tf Value Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns DC SPECIFICATIONS Test Condition Symbol VIH VIL VOH VOL II ICC 4/9 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 1.5 3.15 4.2 -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 Max. 1.5 3.15 4.2 0.5 1.35 1.8 V 0.5 1.35 1.8 2.0 IO=-20 µA 1.9 2.0 1.9 1.9 4.5 IO=-20 µA 4.4 4.5 4.4 4.4 6.0 IO=-20 µA 5.9 6.0 5.9 5.9 4.5 IO=-4.0 mA 4.18 4.31 4.13 4.10 5.68 Unit V V 6.0 IO=-5.2 mA 2.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=20 µA 0.0 0.1 0.1 0.1 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VCC or GND 4 40 80 µA 5.8 5.63 5.60 V M54HC153 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time (Cn - Y) tPLH tPHL Propagation Delay Time (A, B - Y) tPLH tPHL Propagation Delay Time (G - Y) Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 30 8 7 48 15 12 68 20 16 30 10 9 75 15 13 115 23 20 150 30 26 85 17 14 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 145 29 25 190 38 32 105 21 18 Unit Max. 110 22 19 175 35 30 225 45 38 130 26 22 ns ns ns ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) Value TA = 25°C Min. Typ. Max. 10 CIN Input Capacitance 5.0 5 CPD Power Dissipation Capacitance (note 1) 5.0 58 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4(per circuit) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) 5/9 M54HC153 WAVEFORM 1: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 6/9 M54HC153 DILC-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.1 2.71 0.083 0.107 a1 3.00 3.70 0.118 0.146 a2 0.63 1.14 0.025 B 1.82 2.39 0.072 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 D 20.06 20.32 20.58 0.790 0.800 0.810 e 7.36 7.62 7.87 0.290 0.300 0.310 e1 0.88 2.54 0.035 0.045 0.094 0.100 e2 17.65 17.78 17.90 0.695 0.700 0.705 e3 7.62 7.87 8.12 0.300 0.310 0.320 F 7.29 7.49 7.70 0.287 0.295 0.303 I 3.83 0.151 K 10.90 12.1 0.429 0.476 L 1.14 1.5 0.045 0.059 0056437F 7/9 M54HC153 FPC-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 6.75 6.91 7.06 0.266 0.272 0.278 B 9.76 9.94 10.14 0.384 0.392 0.399 C 1.49 1.95 0.059 D 0.102 0.127 0.152 0.004 0.005 0.006 E 8.76 8.89 9.01 0.345 0.350 0.355 F 0.077 1.27 G 0.38 H 6.0 L 18.75 M 0.33 0.050 0.43 0.48 0.015 0.017 0.019 0.237 0.38 N 22.0 0.738 0.43 0.013 0.867 0.015 4.31 0.017 0.170 G F D H 9 16 A N L 8 1 H E B 8/9 M C 0016030E M54HC153 Information furnished is believed to be accurate and reliable. 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