MJD31CT4 Low voltage NPN power transistor General features ■ Surface-mounting TO-252 power package in tape & reel ■ In compliance with the 2002/93/EC European Directive 3 Applications ■ 1 General purpose switching and amplifier transistor DPAK TO-252 Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Internal schematic diagram Order codes Part Number Marking Package Packing MJD31CT4 MJD31C DPAK Tape & reel April 2007 Rev 2 1/9 www.st.com 9 Electrical ratings 1 MJD31CT4 Electrical ratings Table 1. Absolute maximum rating Symbol Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-base voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 3 A Collector peak current 5 A Base current 1 A PTOT Total dissipation at T c = 25°C 15 W Tstg Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ 2/9 Parameter Max. operating junction temperature MJD31CT4 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 2. Electrical characteristics Symbol ICES ICEO IEBO Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) Test Conditions Min. Max. Unit VCE =100V 20 µA VCB =60V 50 µA VEB =5V 0.1 mA IC =30mA 100 VCE(sat) (1) Collector-emitter saturation voltage IC =3A _ IB =375mA VBE(on) (1) Base-emitter on voltage IC =3A _ VCE=4V IC =1A _ _ VCE =4V hFE DC current gain Typ. IC = 3A V CE =4V V 1.2 V 1.8 V 25 10 50 Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristic (curves) Figure 1. Safe operating area Figure 2. Derating curve 3/9 Electrical characteristics 4/9 MJD31CT4 Figure 3. DC current gain Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage Figure 7. Collector-emitter on voltage Figure 8. Resistive load switching time MJD31CT4 Electrical characteristics Figure 9. 2.2 Resistive load switching time Test circuits Figure 10. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Figure 11. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data 3 MJD31CT4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 MJD31CT4 Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 1.00 0.024 L2 L4 V2 0.8 0.60 0 o 0.031 8 o 0 o 0.039 0o P032P_B 7/9 Revision history 4 MJD31CT4 Revision history Table 3. 8/9 Revision history Date Revision Changes 01-Dec-2000 1 Initial release. 20-Apr-2007 2 The document has been reformatted. New graphics have been added. 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