TC74HCT245AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT245AP,TC74HCT245AF Octal Bus Transceiver (3-state) The TC74HCT245A is high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Its inputs are compatible with TTL, NMOS, and CMOS output voltage levels. It is intended for two-way asynchronous communication between data busses. The direction of data transmission is determined by the level of the DIR input. The enable input ( G ) can be used to disable the device so that the busses are effectively isolated. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HCT245AP TC74HCT245AF Features (Note 1) (Note 2) • High speed: tpd = 10 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIL = 0.8 V (max) VIH = 2.0 V (min) • Wide interfacing ability: LSTTL, NMOS, CMOS • Output drive capability: 15 LSTTL loads • • Symmetrical output impedance: |IOH| = IOL = 6 mA (min) Balanced propagation delays: tpLH ∼ − tpHL • Pin and function compatible with 74LS245 Weight DIP20-P-300-2.54A SOP20-P-300-1.27A : 1.30 g (typ.) : 0.22 g (typ.) Note 1: Do not apply a signal to any bus terminal when it is the output mode. Damage may result. Note 2: All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or down resistors. Pin Assignment 1 2007-10-01 TC74HCT245AP/AF IEC Logic Symbol Truth Table Inputs Function Output G DIR A Bus B Bus L L Output Input A=B L H Input Output B=A H X Z Z X: “H” or “L” Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7 V DC input voltage VIN −0.5 to VCC + 0.5 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±35 mA DC VCC/ground current ICC ±75 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. 2 2007-10-01 TC74HCT245AP/AF Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 4.5 to 5.5 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Operating temperature Topr −40 to 85 °C Input rise and fall time tr, tf 0 to 500 ns Output voltage Note: The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited. Electrical Characteristics DC Characteristics Characteristics Symbol Test Condition High-level input voltage VIH Low-level input voltage VIL High-level output voltage VOH VIN = VIH or VIL Low-level output voltage VOL VIN = VIH or VIL 3-state output off-state current IOZ Input leakage current IIN ICC Quiescent supply current IC Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max ⎯ 4.5 to 5.5 2.0 ⎯ ⎯ 2.0 ⎯ V ⎯ 4.5 to 5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V IOH = −20 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ IOH = −6 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯ IOL = 20 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1 IOL = 6 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33 5.5 ⎯ ⎯ ±0.5 ⎯ ±5.0 μA VIN = VCC or GND 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA 5.5 ⎯ ⎯ 2.0 ⎯ 2.9 mA VIN = VIH or VIL VOUT = VCC or GND Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND 3 V V 2007-10-01 TC74HCT245AP/AF AC Characteristics (input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time 3-state output enable time 3-state output disable time CL (pF) VCC (V) tTLH ⎯ tTHL tpLH tpZH tpLZ tpHZ 50 50 ⎯ tpHL tpZL Ta = 25°C Test Condition Symbol 150 50 RL = 1 kΩ 150 RL = 1 kΩ 50 Ta = −40 to 85°C Min Typ. Max Min Max 4.5 ⎯ 7 12 ⎯ 15 5.5 ⎯ 6 11 ⎯ 14 4.5 ⎯ 13 22 ⎯ 28 5.5 ⎯ 11 20 ⎯ 25 4.5 ⎯ 18 30 ⎯ 38 5.5 ⎯ 16 27 ⎯ 34 4.5 ⎯ 19 30 ⎯ 38 5.5 ⎯ 16 27 ⎯ 34 4.5 ⎯ 24 38 ⎯ 48 5.5 ⎯ 22 34 ⎯ 43 4.5 ⎯ 17 30 ⎯ 38 5.5 ⎯ 16 27 ⎯ 34 Unit ns ns ns ns Input capacitance CIN DIR, G ⎯ 5 10 ⎯ 10 pF Output capacitance CI/O An, Bn ⎯ 13 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD ⎯ 41 ⎯ ⎯ ⎯ pF Note: ⎯ (Note) CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/8 (per bit) 4 2007-10-01 TC74HCT245AP/AF Package Dimensions Weight: 1.30 g (typ.) 5 2007-10-01 TC74HCT245AP/AF Package Dimensions Weight: 0.22 g (typ.) 6 2007-10-01 TC74HCT245AP/AF RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01