TSC MMBD4448H

MMBD4448H
Surface Mount Switching Diode
Voltage Range
80 Volts
350m Watts Power Dissipation
SOT-23
Features
0.020(0.51)
0.015(0.37)
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
0.055(1.40)
0.047(1.19)
Mechanical Data
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: KA3
Weight: 0.008 gram (approx.)
0.098(2.50)
0.083(2.10)
0.041(1.05)
0.047(0.89)
0.120(3.05)
0.104(2.65)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
MMBD4448H
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
Units
100
V
80
V
57
500
250
V
mA
mA
4.0
2.0
350
A
mW
RθJA
357
K/W
TJ, TSTG
-65 to + 150
IFSM
Pd
Symbol
Reverse Breakdown Voltage (Note 2) IR=2.5uA
V(BR)
Forward Voltage
IF=5.0mA
IF= 10mA
VF
IF =100mA
IF=150mA
Peak Reverse Current (Note 2)
VR=75V
VR=75V, Tj=150℃
IR
VR=25V, TJ=150℃
VR=20V
Junction Capacitance VR=0.6V, f=1.0MHz
Cj
Reverse Recovery Time VR=6V, IF=5mA
trr
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. tp < 300uS, Duty Cycle < 2%.
- 844 -
O
C
Min
Max
Units
80
0.62
_
V
_
_
_
0.72
0.855
1.0
1.25
V
100
50
30
25
uA
3.5
4.0
pF
nS
nA
RATINGS AND CHARACTERISTIC CURVES (MMBD4448H)
FIG.1- FORWARD CHARACTERISTICS
10000
100
IR, LEAKAGE CURRENT (nA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10
1
0.1
FIG.2- LEAKAGE CURRENT VS JUNCTION
TEMPERATURE
1000
100
10
VR =20V
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
- 845 -
1
0
100
Tj, JUNCTION TEMPERATURE ( C)
200