FREESCALE MRF8S23120H

Freescale Semiconductor
Technical Data
Document Number: MRF8S23120H
Rev. 0, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S23120HR3
MRF8S23120HSR3
Designed for LTE base station applications with frequencies from 2300 to
2400 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
16.0
31.9
6.1
--37.1
2350 MHz
16.3
30.9
6.4
--37.9
2400 MHz
16.6
31.2
6.3
--37.5
2300--2400 MHz, 28 W AVG., 28 V
LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW (1)
Output Power (2 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
CASE 465--06, STYLE 1
NI--780
MRF8S23120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S23120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW
109
0.52
W
W/°C
Symbol
Value (3,4)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 28 W CW, 28 Vdc, IDQ = 800 mA, 2400 MHz
Case Temperature 80°C, 120 W CW(1), 28 Vdc, IDQ = 800 mA, 2400 MHz
RθJC
0.50
0.47
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 172 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., f = 2300 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
14.5
16.0
17.5
dB
Drain Efficiency
ηD
29.0
31.9
—
%
PAR
5.7
6.1
—
dB
ACPR
—
--37.1
--35.0
dBc
IRL
—
--12
--7
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
16.0
31.9
6.1
--37.1
--12
2350 MHz
16.3
30.9
6.4
--37.9
--19
2400 MHz
16.6
31.2
6.3
--37.5
--18
1. Part internally matched both on input and output.
(continued)
MRF8S23120HR3 MRF8S23120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2300--2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
107
—
—
13
—
W
IMD Symmetry @ 84 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
62
—
MHz
Gain Flatness in 100 MHz Bandwidth @ Pout = 28 W Avg.
GF
—
0.6
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.002
—
dB/°C
∆P1dB
—
0.008
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (1)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
3
B1
C11
+
C9
C16
C8
C14
C6*
C2
C5
C13
R1
C1
C15
C3
CUT OUT AREA
C4
C7*
C10 C12
MRF8S23120H/S
Rev. 0
*C6 and C7 are mounted vertically.
Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
MPZ2012S300A
TDK
C1, C4
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C2, C15
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C3
1.8 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C5, C6, C7
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C8
3.3 μF, 100 V Chip Capacitor
C5750X7R2A335MT
TDK
C9, C10, C11, C12, C14
10 μF, 50 V Chip Capacitors
C5750X7R1H106KT
TDK
C13
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
C16
330 nF, 100 V Chip Capacitor
C3225JB2A334KT
TDK
R1
4.75 Ω, 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
0.030″, εr = 2.55
AD255A
Arlon
MRF8S23120HR3 MRF8S23120HSR3
4
RF Device Data
Freescale Semiconductor
32
31
16.4
30
Gps
PARC
--34
--10
16
--35
--15
15.8
--36
16.2
IRL
15.6
--37
ACPR
15.4
15.2
2290
2305
--38
2320
2335
2350
2365
2380
2395
--39
2410
--20
--25
--30
--35
--1
--1.2
--1.4
--1.6
--1.8
PARC (dB)
ηD
16.6
33
ACPR (dBc)
Gps, POWER GAIN (dB)
16.8
34
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17
IRL, INPUT RETURN LOSS (dB)
17.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
--10
VDD = 28 Vdc, Pout = 84 W (PEP), IDQ = 800 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
IM7--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
16.6
0
16.2
15.8
15.4
15
14.6
VDD = 28 Vdc, IDQ = 800 mA, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--1
--1 dB = 26.5 W
ACPR
--4
--5
25
--25
Gps
PARC
20
--3 dB = 48.5 W
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
15
50
30
--2 dB = 36.5 W
--3
--20
40
ηD
--2
60
35
45
55
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--45
0
--50
65
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
15.5
ηD
2300 MHz
2350 MHz
2300 MHz
VDD = 28 Vdc, IDQ = 800 mA
2400 MHz
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
13.5 Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
2400 MHz
2350 MHz
ACPR
1
50
--10
30
2300 MHz
11.5
0
40
14.5
12.5
60
20
10
0
100
10
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
2350 MHz
2400 MHz
16.5
Gps
ηD, DRAIN EFFICIENCY (%)
17.5
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
24
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
10
Gain
16
0
12
--10
IRL
8
--20
4
--30
0
1800
1900
2000
2100
2200
2300
2400
2500
IRL (dB)
GAIN (dB)
20
--40
2600
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S23120HR3 MRF8S23120HSR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2290
8.41 -- j0.97
1.86 -- j4.43
2305
8.58 -- j0.55
1.83 -- j4.28
2320
8.78 -- j0.14
1.80 -- j4.14
2335
8.99 + j0.29
1.77 -- j4.01
2350
9.21 + j0.72
1.74 -- j3.88
2365
9.45 + j1.17
1.72 -- j3.77
2380
9.71 + j1.62
1.69 -- j3.66
2395
9.99 + j2.10
1.66 -- j3.54
2410
10.28 + j2.60
1.65 -- j3.43
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
57
Pout, OUTPUT POWER (dBm)
56
Ideal
2300 MHz
2400 MHz
55
54
2350 MHz
53
52
Actual
51
2300 MHz
50
2400 MHz
2350 MHz
49
48
47
46
29
30
31
32
33
35
34
36
37
38
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2300
152
51.8
185
52.7
2350
150
51.8
181
52.6
2400
147
51.7
177
52.5
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2300
P1dB
4.03 -- j5.45
2.24 + j0.08
2350
P1dB
4.63 -- j6.15
2.21 + j0.35
2400
P1dB
5.57 -- j5.96
2.36 + j0.47
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S23120HR3 MRF8S23120HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
9
MRF8S23120HR3 MRF8S23120HSR3
10
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
11
MRF8S23120HR3 MRF8S23120HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2010
Description
• Initial Release of Data Sheet
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
13
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MRF8S23120HR3 MRF8S23120HSR3
Document Number: MRF8S23120H
Rev. 0, 11/2010
14
RF Device Data
Freescale Semiconductor