UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter Voltage: BVCBO=50V * Collector Current up to 150mA * High hFE Linearity * Complimentary to UTC MMBT733 ORDERING INFORMATION Ordering Number Package MMBT945G-x-AE3-R MMBT945G-x-AL3-R SOT-23 SOT-323 1 E E Pin Assignment 2 3 B C B C Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1of 4 QW-R206-094.B MMBT945 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Collector Dissipation(Ta=25°C) PC 200 mW Junction Temperature TJ 125 °С Storage Temperature TSTG -55 ~ +125 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 Collector Cut-Off Current ICBO VCB=40V, IE=0 Emitter Cut-Off Current IEBO VEB=3V, IC=0 DC Current Gain hFE VCE=6V, IC=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=10mA Current Gain Bandwidth Product fT VCE=10V, IC=50mA Output Capacitance COB VCB=10V, IE=0, f=1MHz IC=-0.1mA, VCE=6V Noise Figure NF RG=10kΩ, f=100Hz MIN 60 50 TYP 90 100 0.1 190 2.0 4.0 MAX 100 100 600 0.3 UNIT V V nA nA 3.0 V MHz pF 6.0 dB CLASSIFICATION OF hFE RANK RANGE R 90-180 Q 135-270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 200-400 K 300-600 2 of 4 QW-R206-094.B MMBT945 DC Current Gain, hFE Collector Current, IC (mA) TYPICAL CHARACTERISTICS Saturation Voltage (mV) Collector Current, IC (mA) NPN SILICON TRANSISTOR Current Gain-Bandwidth Product Collector Output Capacitance 103 102 VCE=6V 102 101 101 100 100 10-1 0 1 10 10 Collector Current, IC (mA) 2 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10-1 100 f=1MHz IE=0 101 102 103 Collector-Base Voltage (V) 3 of 4 QW-R206-094.B MMBT945 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-094.B