CTLTVS6V2 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLTVS6V2 is a low leakage, fast response silicon TVS packaged in an ultra small, ultra low profile TLM2D3D6 surface mount case. This device is designed to protect sensitive equipment against ESD damage. MARKING CODE: S TLM2D3D6 CASE APPLICATIONS: • User interface protection • Voltage rail protection • Data line protection • Voltage clamping FEATURES: • Ultra small, ultra low profile 0.3mm x 0.6mm x 0.3mm TLP™ leadless surface mount package • High peak pulse current capability • Low leakage current • 15kV ESD protection MAXIMUM RATINGS: (TA=25°C) Peak Power Dissipation (8x20μs) SYMBOL PPK 35 UNITS W ESD Voltage (IEC 61000-4-2, Air) VESD TJ, Tstg 15 kV -55 to +150 °C Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.0V MAX @ IF=10mA Maximum Reverse Stand-off Voltage VRWM IT Maximum Reverse Leakage Current IR @ VRWM Maximum Clamping Voltage VC @ IPP Peak Pulse Current IPP Typical Junction Capacitance @ 0V Bias CJ Breakdown Voltage Test Current VBR @ IT V MIN V NOM V MAX V mA μA V A pF 4.0 5.8 6.2 6.6 5.0 1.0 10.7 3.0 25 R1 (23-January 2013) CTLTVS6V2 SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR TLM2D3D6 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S R1 (23-January 2013) w w w. c e n t r a l s e m i . c o m CTLTVS6V2 SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR TYPICAL ELECTRICAL CHARACTERISTICS R1 (23-January 2013) w w w. c e n t r a l s e m i . c o m