TI TIL192A

TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
D
D
D
D
Gallium-Arsenide-Diode Infrared Source
Source Is Optically Coupled to Silicon npn
Phototransistor
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
D
D
D
High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
Plastic Dual-In-Line Packages
UL Listed — File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL193
TIL191
ANODE
CATHODE
1
4
3
2
1ANODE
1
16
COLLECTOR
EMITTER
1CATHODE
15
2
3
14
4
13
2ANODE
TIL192
1ANODE
1CATHODE
1
2
3
2ANODE
2CATHODE
4
2CATHODE
8
7
6
5
1COLLECTOR
3ANODE
1EMITTER
3CATHODE
2COLLECTOR
2EMITTER
5
12
11
6
7
10
8
9
4ANODE
4CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
3COLLECTOR
3EMITTER
3COLLECTOR
3EMITTER
absolute maximum ratings at 25°C free-air (unless otherwise noted)†
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 3.535 kV peak or dc (± 2.5 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
electrical characteristics 25°C free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V(BR)CEO
V(BR)ECO
Collector-emitter breakdown voltage
IR
IC(off))
Input diode static reverse current
IC = 0.5 mA,
IC = 100 µA,
Emitter-collector breakdown voltage
VR = 5 V
VCE = 24 V,
Off-state collector current
MIN
IF = 0
IF = 0
Current transfer ratio
VF
VCE(sat)
Input diode static forward voltage
Cio
Input-to-output capacitance
UNIT
V
V
IF = 0
10
µA
100
nA
1.4
V
0.4
V
20%
TIL191A, TIL192A, TIL193A
IF = 5 mA,
VCE = 5 V
TIL191B, TIL192B, TIL193B
50%
100%
IF = 20 mA
IF = 5 mA,
Collector-emitter saturation voltage
MAX
7
TIL191, TIL192, TIL193
CTR
TYP
35
IC = 1 mA
f = 1 MHz,
Vin–out = 0 mA,
See Note 6
1
pF
Vin–out = ±1 mA, See Note 6
1011
Ω
NOTE 6: These parameters are measured between all input diode leads shorted together and all phototransistor leads shorted together.
rio
Input-to-output internal resistance
switching characteristics at 25°C free-air temperature
PARAMETER
tr
tf
TEST CONDITIONS
Rise time
VCC = 5 V,
RL = 100 Ω ,
Fall time
MIN
IC(on) = 2 mA,
See Figure 1
TYP
MAX
6
UNIT
µs
6
PARAMETER MEASUREMENT INFORMATION
47 Ω
Input (see Note A)
Output (see Note B)
Input
0V
tr
+
–
VCC = 5 V
RL = 100 Ω
Output
90%
10%
tf
90%
10%
NOTE C. Adjust amplitude of input
pulse for IC(on) = 2 mA
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZOUT = 50 Ω, tr ≤ 15 ns, duty cycle ≈ 1%,
tw = 100 µs.
B. The output waveform is monitored on a oscilloscope with the following characteristic: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.
Figure 1. Switching Times
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
TIL191, TIL192, TIL193
FORWARD CURRENT
vs
FORWARD VOLTAGE
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
160
16
14
120
I C – Collector Current – mA
I F – Forward Current – mA
140
IB = 0
TA = 25°C
100
TA = 25°C
80
TA = 70°C
60
40
IF = 10 mA
12
10
IF = 8 mA
8
6
IF = 5 mA
4
TA = – 55°C
20
IF = 2 mA
2
0
0
0
0.2
0.4 0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
1
2
4
5
6
7
8
9
10
Figure 3
Figure 2
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
ON-STATE COLLECTOR CURRENT (NORMALIZED)
vs
INPUT DIODE FORWARD CURRENT
1.2
100
VCE = 5 V
Normalized to IF = 5 mA
TA = 25°C
VCE = 5 V
IF = 5 mA
IB = 0
1.1
On-State Collector Current
(Relative to Value at TA = 25 °C)
10
3
VCE – Collector-Emitter Voltage – V
VF – Forward Voltage – V
I C(on) – On-State Collector Current (Normalized)
IF = 12 mA
1
0.1
0.01
1
0.9
0.8
0.7
0.6
0.5
0.001
0.1
0.4
1
4
10
40
IF – Input Diode Forward Current – mA
100
0.4
– 50
– 25
Figure 4
0
25
50
75
TA – Free-Air Temperature – °C
100
Figure 5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
VC(sat) – Collector-Emitter Saturation Voltage – V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
FREE-AIR TEMPERATURE
0.24
IF = 5 mA
IC = 1 mA
0.20
0.16
0.12
0.08
0.04
0
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 6
APPLICATION INFORMATION
Vcc = 5 V
5V
430 Ω
7.5 kΩ
OUTPUT
SN7404
SN7404
INPUT
TIL191
Figure 7
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
MECHANICAL INFORMATION
4,80 (0.189)
4,19 (0.165)
TIL191
Pin 1
10,2 (0.401)
9,2 (0.362)
TIL192
Pin 1
21,1 (0.831)
18,5 (0.728)
TIL193
CL
CL
7,62 (0.300) T.P.
(see Note A)
Pin 1
6,76 (0.266)
6,25 (0.246)
0,51 (0.125) MIN
3,81 (0.150)
3,30 (0.130)
5,84 (0.230) MAX
105°
90°
Seating Plane
1,27 (0.050)
1,12 (0.044)
3,81 (0.150)
2,54 (0.100)
2,79 (0.110)
2,29 (0.090)
0,58 (0.023)
0,43 (0.017)
NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.
B. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 8. Mechanical Information
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
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Copyright  1998, Texas Instruments Incorporated